Manufacturing method of semiconductor device
    5.
    发明专利
    Manufacturing method of semiconductor device 审中-公开
    半导体器件的制造方法

    公开(公告)号:JP2007096115A

    公开(公告)日:2007-04-12

    申请号:JP2005285422

    申请日:2005-09-29

    IPC分类号: H01L21/304 B24B1/00

    摘要: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for not propagating cracking and chipping generated at an outer peripheral edge to the inside when thinning a semiconductor wafer by back surface grinding.
    SOLUTION: On a semiconductor substrate 10 provided with a first surface 10a where the semiconductor device 12 is formed and a second surface 10b on the opposite side of the first surface, a recess 14 is formed in an outer peripheral region where the semiconductor device 12 is not formed on the first surface 10a. The second surface 10b of the semiconductor substrate 10 is ground and the semiconductor substrate 10 is thinned. Since the recess 14 is formed, the thickness of the semiconductor substrate 10 at the position of the recess 14 after grinding it from the side of the second surface 10b is extremely small. Or, the semiconductor substrate 10 is separated at the recess 14 by grinding from the side of the second surface 10b.
    COPYRIGHT: (C)2007,JPO&INPIT

    摘要翻译: 要解决的问题:提供一种半导体器件的制造方法,该半导体器件在通过背面研磨来减薄半导体晶片时,不会在外周边缘向内部产生裂纹和碎裂。 解决方案:在具有形成有半导体器件12的第一表面10a和在第一表面的相对侧上的第二表面10b的半导体衬底10上,在半导体衬底10的外周区域中形成有凹部14, 装置12不形成在第一表面10a上。 对半导体衬底10的第二表面10b进行研磨,并使半导体衬底10变薄。 由于形成凹部14,所以从第二面10b侧研磨后的凹部14的位置处的半导体衬底10的厚度非常小。 或者,半导体衬底10通过从第二表面10b的侧面研磨而在凹部14处分离。 版权所有(C)2007,JPO&INPIT

    Semiconductor device and manufacturing method thereof
    6.
    发明专利
    Semiconductor device and manufacturing method thereof 有权
    半导体器件及其制造方法

    公开(公告)号:JP2007048962A

    公开(公告)日:2007-02-22

    申请号:JP2005232040

    申请日:2005-08-10

    IPC分类号: H01L21/52 H01L25/00

    摘要: PROBLEM TO BE SOLVED: To prevent that a passive component is brought into contact with a die pad in a semiconductor device, constituted by connecting a semiconductor chip and the passive component with bonding wires, wherein the passive component is mounted via insulating paste-like adhesives on the die pad mounting the semiconductor chip. SOLUTION: After applying a first insulating adhesive on the die pad, the first insulating adhesive is made to harden. On the hardened first insulating adhesives, a second insulating adhesive is applied further so that the passive component may be attached fixedly. Even if stress is added at the time of arranging the passive component on the die pad, passive component is prevented from coming into direct contact with the die pad due to the first insulating adhesive. Then, the connection is carried out between the electrode pad of the semiconductor device on the die pad and the terminal of the passive component by wire bonding. COPYRIGHT: (C)2007,JPO&INPIT

    摘要翻译: 要解决的问题:为了防止无源部件与半导体器件中的管芯焊盘接触,其通过用接合线连接半导体芯片和无源部件构成,其中无源部件经由绝缘膏安装 在芯片焊盘上安装半导体芯片的类似粘合剂。 解决方案:在芯片焊盘上施加第一绝缘粘合剂之后,使第一绝缘粘合剂硬化。 在硬化的第一绝缘粘合剂上,进一步施加第二绝缘粘合剂,使得被动部件可以固定地附接。 即使在将无源部件布置在管芯焊盘上时施加应力,也可以防止被动部件由于第一绝缘粘接剂而与管芯焊盘直接接触。 然后,通过引线接合在芯片焊盘上的半导体器件的电极焊盘与无源部件的端子之间进行连接。 版权所有(C)2007,JPO&INPIT