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    Substrate structure and package structure using the same
    6.
    发明授权
    Substrate structure and package structure using the same 有权
    基板结构和封装结构使用相同

    公开(公告)号：US09578737B2

    公开(公告)日：2017-02-21

    申请号：US14169640

    申请日：2014-01-31

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Kuo-Hua Chen ,  Ming-Chiang Lee ,  Tsung-Hsun Lee ,  Chen-Chuan Fan

    IPC: H05K7/00 ,  H05K1/02 ,  H01L23/31 ,  H01L23/498 ,  H05K1/09 ,  H05K1/11

    CPC classification number: H05K1/0298 ,  H01L23/3128 ,  H01L23/49838 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H05K1/0271 ,  H05K1/09 ,  H05K1/116 ,  H05K2201/09781

    Abstract: A substrate structure is provided. The substrate structure includes a number of traces, a substrate core, a number of first metal tiles, a number of second metal tiles, a number of first electrically-functioning circuits, and a number of second electrically-functioning circuits. The substrate core has a first surface and a second surface opposite to the first surface. The traces, the first metal tiles, and the first electrically-functioning circuits are disposed on the first surface and add up to a first metal structure proportion, and the second metal tiles and the second electrically-functioning circuits are disposed on the second surface and add up to a second metal structure proportion. The difference between the first metal structure proportion and the second metal structure proportion is within 15%.

    Abstract translation: 提供了基板结构。 衬底结构包括多个迹线，衬底芯，多个第一金属片，多个第二金属片，多个第一电功能电路和多个第二电功能电路。 衬底芯具有与第一表面相对的第一表面和第二表面。 迹线，第一金属瓦片和第一电功能电路设置在第一表面上并加到第一金属结构比例上，第二金属瓦片和第二电功能电路设置在第二表面上， 加起来第二个金属结构比例。 第一金属结构比例与第二金属结构比例之差在15％以内。

    Semiconductor device package and method of making the same
    7.
    发明授权
    Semiconductor device package and method of making the same 有权
    半导体器件封装及其制造方法

    公开(公告)号：US09564393B1

    公开(公告)日：2017-02-07

    申请号：US14857931

    申请日：2015-09-18

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Chih-Yi Huang ,  Kuo-Hua Chen ,  Chi-Tsung Chiu

    IPC: H01L23/00 ,  H01L23/498 ,  H01L21/52 ,  H01L21/768

    CPC classification number: H01L23/49844 ,  H01L21/486 ,  H01L21/52 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92244 ,  H01L2924/3025 ,  H01L2924/3511

    Abstract: A semiconductor device package includes a substrate and a semiconductor device disposed on a surface of the substrate. The semiconductor device includes a first contact pad and a second contact pad disposed on an upper surface of the semiconductor device. The semiconductor device package further includes a conductive bar disposed on the first contact pad, and a conductive pillar disposed on the second contact pad. A method of making a semiconductor device package includes (a) providing a substrate; (b) mounting a semiconductor device on the substrate, wherein the semiconductor device comprises a first contact pad and a second contact pad on an upper surface of the semiconductor device; (c) forming a dielectric layer on the substrate to cover the semiconductor device; (d) exposing the second contact pad by forming a hole in the dielectric layer; and (e) applying a conductive material over the dielectric layer and filling the hole.

    Abstract translation: 半导体器件封装包括衬底和设置在衬底的表面上的半导体器件。 半导体器件包括设置在半导体器件的上表面上的第一接触焊盘和第二接触焊盘。 半导体器件封装还包括设置在第一接触焊盘上的导电棒和设置在第二接触焊盘上的导电柱。 制造半导体器件封装的方法包括（a）提供衬底; （b）将半导体器件安装在所述衬底上，其中所述半导体器件包括在所述半导体器件的上表面上的第一接触焊盘和第二接触焊盘; （c）在所述基板上形成电介质层以覆盖所述半导体器件; （d）通过在电介质层中形成一个孔来暴露第二接触垫; 和（e）将导电材料涂覆在电介质层上并填充该孔。

    Semiconductor device package
    10.
    发明授权
    Semiconductor device package 有权

    公开(公告)号：US10707157B2

    公开(公告)日：2020-07-07

    申请号：US15621970

    申请日：2017-06-13

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Hui Hua Lee ,  Chun Hao Chiu ,  Hui-Ying Hsieh ,  Kuo-Hua Chen ,  Chi-Tsung Chiu

    IPC: H01L23/495 ,  H01L23/00 ,  H01L23/538 ,  H01L23/498 ,  H01L21/48 ,  H01L25/16 ,  H01L25/065

    Abstract: A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

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