摘要:
The inverter has a plurality of arms for conducting or cutting off a current and each arm has a switching device and a first and a second wiring layer for connecting the switching device. The first and second wiring layers of each arm are respectively formed on insulating substrates, and one face of the switching device is fixed to the first wiring layer, and the second wiring layer and the other face of the switching device are electrically connected by a laminal conductor, and the laminal conductor has a first and a second connection, and the first connection of the laminal conductor is fixed to the other face of the switching device, and the second connection of the laminal conductor is fixed to the second wiring layer.Thereby, a large current of the inverter can be realized and the assembly capacity of the inverter or the vehicle drive unit will be improved.
摘要:
The inverter has a plurality of arms for conducting or cutting off a current and each arm has a switching device and a first and a second wiring layer for connecting the switching device. The first and second wiring layers of each arm are respectively formed on insulating substrates, and one face of the switching device is fixed to the first wiring layer, and the second wiring layer and the other face of the switching device are electrically connected by a laminal conductor, and the laminal conductor has a first and a second connection, and the first connection of the laminal conductor is fixed to the other face of the switching device, and the second connection of the laminal conductor is fixed to the second wiring layer. Thereby, a large current of the inverter can be realized and the assembly capacity of the inverter or the vehicle drive unit will be improved.
摘要:
Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.
摘要:
A semiconductor power module has insulative substrate which is configured with a metal wiring pattern formed on an upper first surface thereof, a metal conductor formed on a rear face, opposite the first surface and an insulative layer between the metal wiring pattern and the metal conductor. A semiconductor chip is joined to the metal wiring pattern formed on the first surface of the insulative substrate, using Pb-free solder with a low melting point. A heat sink is bonded to the metal conductor formed on the other surface of the insulative substrate, using a highly heat conductive adhesive having a thermal conductivity of 2 W/(mK) or more.
摘要:
Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.
摘要:
In order to solve the issue mentioned above, the present invention is featured in electrically conductive adhesive sheet: wherein the substrate 1 which composes electrically, thermally, or electrically and thermally conducting paths in a direction along the plane of the sheet is formed of metallic foil having a coefficient of thermal expansion between the coefficient of thermal expansion of one of at least two bonded members and the coefficient of thermal expansion of another one of the bonded members. In accordance with the present invention adopting the composition mentioned above, a stress applied to the protrusion layer 2, which composes electrically, thermally, or both electrically and thermally conducting paths between the substrate 1 and the bonded members by difference in thermal expansion, can be moderated.
摘要:
A power module includes a power unit equipped with plural power semiconductor devices, heat sinks, and a housing case. The power unit includes the power semiconductor devices, lead frames, and a sealing resin. The lead frames are coupled to the surfaces of each of the power semiconductor devices, and parts of the external surfaces of the upper and lower lead frames are bared out of the sealing resin. The housing case includes a housing base and a housing cover. The housing base, heat sink, power unit, heat sink, and housing cover are layered in that order. Assuming that S1 denotes the outline size of the housing base, S2 denotes the outline size of the housing cover, S3 denotes the size of the lead frame bared part of the power unit, the relationship of S1>S2>S3 is established. The housing cover is pressed and fixed to a receiving part of the housing base.
摘要:
A power semiconductor device includes a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit, a first sealing member sealing the plurality of power semiconductor elements, a positive electrode-side terminal and a negative electrode-side terminal each connected with any of the plurality of power semiconductor elements and protruding from the first sealing member, a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal, and a case in which the power semiconductor elements sealed with the first sealing member are housed.
摘要:
A power module includes a sealed body in which a semiconductor chip-mounted conductor plate is sealed by a resin in such a manner that a heat dissipating surface of the conductor plate is exposed, a heat dissipating member that is arranged to face the heat dissipating surface, and an insulation layer that is arranged between the sealed body and the heat dissipating member. The insulation layer has a laminated body that is made by laminating an impregnation resin-impregnated ceramic thermal spray film and a bonding resin layer in which a filler having good thermal conductivity is mixed, and that is provided to be in contact with the heat dissipating member and at least the entirety of the heat dissipating surface, and a stress relief resin portion that is provided in a gap between the heat dissipating member and the sealed body to cover an entire circumferential end portion of the laminated body.
摘要:
An object of the present invention is to provide a generator control unit having improved voltage response in a system which is not provided with a battery in a DC output unit.In order to control the DC voltage of the DC voltage output terminal in a state where an electric load is connected to the DC voltage output terminal of a power generation unit, a PWM signal generation unit 429 generates a field voltage to be applied to a field winding terminal of the power generation unit. A feedback control unit 422 calculates a field voltage command value to be given to the PWM signal generation unit 429. Further, the feedback control unit 422 includes a PT control unit 423 which calculates a voltage deviation between a DC voltage detection value and a DC voltage command value to generate the field voltage command value through a PI operation based on the voltage deviation. The feedback control unit 422 includes compensation units 424 and 425 which generate a field voltage command value after compensating the output of the PT control unit 423 for the voltage deviation based on input/output transfer characteristics of the generator from the field voltage to the DC voltage.