Abstract:
The invention provides a semiconductor package. The semiconductor package includes a semiconductor package includes a substrate having a die attach surface. A die is mounted on die attach surface of the substrate via a conductive pillar bump. The die comprises a metal pad electrically coupling to the conductive pillar bump, wherein the metal pad has a first edge and a second edge substantially vertical to the first edge, wherein the length of the first edge is different from that of the second edge from a plan view.
Abstract:
A high-bandwidth package-on-package (HBPoP) structure includes a first package structure and a second package structure disposed over the first package structure. The first package structure includes a first package substrate, a semiconductor die, an interposer, and a molding material. The first package substrate is formed of a silicon and/or ceramic material. The semiconductor die is disposed over the first package substrate. The interposer is disposed over the semiconductor die and is formed of a silicon and/or ceramic material. The molding material is disposed between the first package substrate and the interposer and surrounds the semiconductor die.
Abstract:
The invention provides a semiconductor package and a method for fabricating a base for a semiconductor package. The semiconductor package includes a base. The base has a device-attach surface. A radio-frequency (RF) device is embedded in the base. The RF device is close to the device-attach surface.
Abstract:
A semiconductor package is provided. In one configuration, the semiconductor package includes a substrate. A conductive trace is disposed on the substrate. A conductive pillar bump is disposed on the conductive trace, wherein the conductive bump is coupled to a die. In another configuration, a first conductive trace is disposed on the substrate, and a second conductive trace is disposed on the substrate. In the second configuration, a conductive pillar bump disposed on the second conductive trace, connecting to a conductive bump or a metal pad of the semiconductor die. A first conductive structure is disposed between the second conductive trace and the conductive pillar bump or between the second conductive trace and the substrate, and a die is disposed over the first conductive trace.
Abstract:
A semiconductor package structure includes a first component, a bonding structure on the first component, a second component connected to the first component, and a copper connector on the second component. The bonding structure includes a copper base on the first component and copper protruding portions on the copper base. The second component is connected to the first component by bonding the copper protruding portions to the copper connector, and the copper protruding portions are in contact with the copper connector.
Abstract:
A semiconductor assembly package is provided. The semiconductor package assembly includes a system-on-chip (SOC) package, a memory package and a heat spreader. The SOC package includes a logic die and a first substrate. The logic die has pads on it. The first substrate is electrically connected to the logic die by the pads. The memory package includes a second substrate and a memory die. The second substrate has a top surface and a bottom surface. The memory die is mounted on the top surface of the second substrate and is electrically connected to the second substrate using bonding wires. The heat spreader is disposed between the SOC package and the memory package, wherein the heat spreader is in contact with a back surface of the logic die away from the pads.
Abstract:
A semiconductor package structure includes a semiconductor die, a redistribution layer (RDL) structure, a protective insulating layer, and a conductive structure. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die. The protective insulating layer covers the RDL structure, the second surface and the third surface of the semiconductor die. The conductive structure passes through the protective insulating layer and is electrically coupled to the RDL structure.
Abstract:
A package substrate is provided. The package substrate includes a dielectric layer and a passive component embedded in the dielectric layer and contacting the dielectric layer. A circuit layer is embedded in the dielectric layer and has a first surface aligned with a second surface of the dielectric layer. A conductive structure is embedded in the dielectric layer and electrically connected to the passive component and the circuit layer. A chip package is also provided.
Abstract:
A chip package includes a patterned conducting plate having a plurality of conducting sections electrically separated from each other, a plurality of conducting pads disposed on an upper surface of the patterned conducting plate, wherein a recess extending from a surface of one of the conducting pads towards an inner portion of the corresponding one of the conducting pads, a chip disposed on the conducting pads, a plurality of conducting bumps disposed on a lower surface of the patterned conducting plate, wherein each of the conducting bumps is electrically connected to a corresponding one of the conducting sections of the patterned conducting plate, and an insulating support layer partially surrounding the conducting bumps.
Abstract:
A semiconductor device is provided. The semiconductor device includes a bottom package and a top package. The top package is mounted on the bottom package. At least one portion of the top package protrudes from a sidewall of the bottom package. The semiconductor device further includes a passive device mounted on a protruding region of the portion of the top package.