公开(公告)号：US09054673B2

公开(公告)日：2015-06-09

申请号：US14069748

申请日：2013-11-01

Applicant: Samsung Electronics Co., Ltd. ,  Korea University Industrial & Academic Collaboration Foundation

Inventor： Yun-kwon Park ,  Byeoung-ju Ha ,  Byeong-Kwon Ju ,  Jae-sung Rieh ,  In-sang Song ,  Jin-woo Lee ,  Jea-shik Shin ,  Young-min Park

IPC: H01L21/00 ,  H03H9/46 ,  B81C1/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00 ,  H03H3/007 ,  H03H9/24

CPC classification number: H03H9/462 ,  B81B2201/0271 ,  B81C1/00142 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H03H3/0072 ,  H03H9/2463

Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.

Abstract translation: 提供了一种谐振器制造方法。 一种方法包括使用纳米压印技术在基板上提供彼此分离的多个电极图案; 以及形成连接到多个电极图案的延伸电极图案，并且形成跨越延伸的电极图案的纳米结构。 因此，纳米机电系统（NEMS）谐振器容易在纳米级制造。

公开(公告)号：US09129846B2

公开(公告)日：2015-09-08

申请号：US14511149

申请日：2014-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-sang Song ,  In-Ku Kang ,  Joon-hee Lee ,  Kyung-man Kim

IPC: H01L23/52 ,  H01L25/10

CPC classification number: H01L25/105 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0235 ,  H01L2224/02379 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05012 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/06135 ,  H01L2224/29034 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/454 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48148 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/4866 ,  H01L2224/48666 ,  H01L2224/48681 ,  H01L2224/48684 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/4876 ,  H01L2224/48766 ,  H01L2224/48781 ,  H01L2224/48784 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/48866 ,  H01L2224/48881 ,  H01L2224/48884 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83365 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10333 ,  H01L2924/10335 ,  H01L2924/13091 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/14511 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: The semiconductor package includes: a package substrate comprising a bonding pad; a plurality of semiconductor chips stacked on the package substrate; and a bonding wire configured to electrically connect the semiconductor chips and the bonding pad. For at least one of the plurality of semiconductor chips: the semiconductor chip comprises: a semiconductor device; a first pad electrically connected to the semiconductor device; a conductive pattern; and a second pad electrically connected to the first pad, spaced apart from the conductive pattern, and extending over the conductive pattern; and the bonding wire is connected to the second pad.

Abstract translation: 半导体封装包括：封装衬底，其包括焊盘; 堆叠在所述封装基板上的多个半导体芯片; 以及被配置为电连接半导体芯片和接合焊盘的接合线。 对于所述多个半导体芯片中的至少一个半导体芯片，所述半导体芯片包括：半导体器件; 电连接到所述半导体器件的第一焊盘; 导电图案; 以及第二焊盘，其电连接到所述第一焊盘，与所述导电图案间隔开并且延伸穿过所述导电图案; 并且接合线连接到第二焊盘。

公开(公告)号：US09628048B2

公开(公告)日：2017-04-18

申请号：US14327151

申请日：2014-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuang-woo Nam ,  In-sang Song ,  Chul-soo Kim ,  Yun-kwon Park ,  Eun-seok Park

IPC: H03H9/70 ,  H03H9/72 ,  H03H9/46 ,  H03H9/10 ,  H03H9/54 ,  H03H9/64 ,  H03H3/02 ,  H03H3/08 ,  H03H3/007

CPC classification number: H03H9/46 ,  H03H3/02 ,  H03H3/08 ,  H03H9/105 ,  H03H9/1092 ,  H03H9/54 ,  H03H9/64 ,  H03H9/703 ,  H03H9/706 ,  H03H9/72 ,  H03H9/725 ,  H03H2003/0071 ,  Y10T29/42

Abstract: A method of fabricating a multi-band filter module is provided. The method includes forming a Film Bulk Acoustic Resonator (FBAR) on a piezoelectric substrate by forming a resonant part on the piezoelectric substrate and then an air gap recessed on a surface of the piezoelectric substrate and positioned under the resonant part; and forming a Surface Acoustic Wave (SAW) device on the piezoelectric substrate in which the steps of forming the FBAR and the SAW are concurrently performed.