公开(公告)号：US20240191396A1

公开(公告)日：2024-06-13

申请号：US18285099

申请日：2022-03-31

Applicant: University of Copenhagen ,  Danmarks Tekniske Universitet

Inventor： Joachim Elbeshausen Sestoft ,  Thomas Kanne Nordqvist ,  Mikelis Marnauza ,  Aske Nørskov Gejl ,  Dags Olsteins ,  Kasper Grove-Rasmussen ,  Jesper Nygård

IPC: C30B29/60 ,  C30B11/12 ,  C30B29/40 ,  C30B29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L29/76 ,  H01L31/0352 ,  H01L33/06 ,  H10N60/12

CPC classification number: C30B29/605 ,  C30B11/12 ,  C30B29/40 ,  C30B29/66 ,  H01L29/0665 ,  H01L29/20 ,  H01L29/66977 ,  H01L29/7613 ,  H01L31/035227 ,  H01L33/06 ,  H10N60/12

Abstract: The present disclosure relates to a method of manufacturing a transferable lamella comprising interconnected nanostructures, the method comprising the steps of: a) providing a substrate such as a planar substrate; b) forming at least one superstructure on the substrate, said superstructure comprising a plurality of elongated nanostructures (formed e.g. by growth, deposition, and/or etching); wherein the elongated nanostructures are formed such that at least two of said nanostructures are conductively interconnected, and/or wherein at least a first layer is grown or deposited to conductively interconnect or insulate at least a part of the elongated nanostructures; c) encapsulating at least a portion of said superstructure in an encapsulating material, said portion comprising at least two interconnected nanostructures; and d) cutting the encapsulating material in a direction that intersects at least two interconnected nanostructures, thereby manufacturing a transferable lamella comprising interconnected nanostructures. The present disclosure further relates to an electronic device manufactured from one or more of the lamellas provided by the method.

公开(公告)号：US11807571B2

公开(公告)日：2023-11-07

申请号：US17545493

申请日：2021-12-08

Applicant: CORNING INCORPORATED ,  ICFO

Inventor： Albert Carrilero ,  Prantik Mazumder ,  Valerio Pruneri

IPC: C30B29/06 ,  C03C15/00 ,  C30B29/60 ,  C30B29/18 ,  C30B11/12 ,  C01B33/12

CPC classification number: C03C15/00 ,  C01B33/12 ,  C30B11/12 ,  C30B29/06 ,  C30B29/18 ,  C30B29/60 ,  C30B29/602 ,  C01P2004/13

Abstract: Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

公开(公告)号：US11711986B2

公开(公告)日：2023-07-25

申请号：US16627703

申请日：2017-11-30

Applicant: Microsoft Technology Licensing, LLC

Inventor： Peter Krogstrup Jeppesen

IPC: H01L27/18 ,  C23C14/28 ,  C30B11/12 ,  H01L29/06 ,  H01L39/22 ,  H01L39/24 ,  H01L39/06 ,  C30B23/06 ,  G06N10/00 ,  B82Y10/00

CPC classification number: H01L27/18 ,  C23C14/28 ,  C30B11/12 ,  C30B23/06 ,  H01L29/0669 ,  H01L39/06 ,  H01L39/22 ,  H01L39/24 ,  H01L39/248 ,  H01L39/249 ,  B82Y10/00 ,  G06N10/00

Abstract: A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.

公开(公告)号：US09680039B2

公开(公告)日：2017-06-13

申请号：US14300614

申请日：2014-06-10

Applicant: QuNano AB

Inventor： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson

IPC: H01L31/0352 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/60 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L29/737 ,  H01L29/88 ,  H01L33/04 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/068

CPC classification number: H01L31/035227 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/20 ,  H01L29/66318 ,  H01L29/7371 ,  H01L29/882 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/068 ,  H01L33/04 ,  Y02E10/547 ,  Y10S977/762 ,  Y10S977/763

Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.

公开(公告)号：US20170114454A1

公开(公告)日：2017-04-27

申请号：US15316913

申请日：2015-06-12

Applicant: Commissariat A L'energie Atomique Et Aux Energies Alternatives

Inventor： Pascale Chenevier ,  Peter Reiss ,  Olga Burchak

IPC: C23C16/24 ,  C23C16/01 ,  C23C16/44 ,  H01G11/30 ,  H01M10/0525 ,  C30B25/00 ,  C30B29/06 ,  C30B29/62 ,  C01B33/029 ,  H01M4/38

CPC classification number: C23C16/24 ,  B82Y40/00 ,  C01B33/027 ,  C01B33/029 ,  C01P2004/16 ,  C01P2006/40 ,  C23C16/01 ,  C23C16/44 ,  C30B11/12 ,  C30B25/005 ,  C30B29/06 ,  C30B29/60 ,  C30B29/62 ,  H01G11/30 ,  H01M4/386 ,  H01M10/052 ,  H01M10/0525 ,  Y02E60/13

Abstract: A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).

公开(公告)号：US09632190B2

公开(公告)日：2017-04-25

申请号：US14230372

申请日：2014-03-31

Applicant: Ashley C. Stowe ,  Arnold Burger

Inventor： Ashley C. Stowe ,  Arnold Burger

IPC: G01N23/04 ,  G01T3/08 ,  C30B11/12 ,  C30B11/06 ,  C30B29/46 ,  G01N23/05

CPC classification number: G01T3/08 ,  C30B11/06 ,  C30B11/12 ,  C30B29/46 ,  G01N23/046 ,  G01N23/05

Abstract: A neutron imaging system, including: a plurality of Li-III-VI2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and electronics operable for detecting and a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons. Each of the crystals is formed by: melting the Group III element; adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and adding the Group VI element to the single phase Li-III compound and heating. Optionally, each of the crystals is also formed by doping with a Group IV element activator.

公开(公告)号：US09574286B2

公开(公告)日：2017-02-21

申请号：US14403427

申请日：2013-05-24

Applicant: SOL VOLTAICS AB

Inventor： Greg Alcott ,  Martin Magnusson ,  Olivier Postel ,  Knut Deppert ,  Lars Samuelson ,  Jonas Ohlsson

IPC: C30B25/00 ,  C30B25/02 ,  C30B29/06 ,  C30B29/40 ,  C30B11/00 ,  C30B11/12 ,  C30B29/62 ,  C30B29/60

CPC classification number: C30B25/14 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/45519 ,  C30B11/003 ,  C30B11/006 ,  C30B11/12 ,  C30B23/007 ,  C30B25/005 ,  C30B25/025 ,  C30B29/06 ,  C30B29/40 ,  C30B29/403 ,  C30B29/42 ,  C30B29/60 ,  C30B29/62 ,  Y10T117/102

Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

Abstract translation: 一种气相纳米线生长装置，包括反应室（200），第一输入端和第二输入端（202B，202A）。 所述第一输入同心地位于所述第二输入内，并且所述第一和第二输入被配置为使得从所述第二输入端递送的第二流体在从所述第一输入端输送的第一流体与所述反应室的壁之间提供护套。 可以使用催化剂颗粒的气溶胶来生长纳米线。

公开(公告)号：US20160370477A1

公开(公告)日：2016-12-22

申请号：US14230372

申请日：2014-03-31

Applicant: FISK UNIVERSITY ,  BABCOCK & WILCOX TECHNICAL SERVICES Y-12, L.L.C., Attn: Mike Renner

Inventor： Ashley C. Stowe ,  Arnold Burger

IPC: G01T3/08 ,  G01N23/05 ,  G01N23/04

CPC classification number: G01T3/08 ,  C30B11/06 ,  C30B11/12 ,  C30B29/46 ,  G01N23/046 ,  G01N23/05

Abstract: A neutron imaging system, including: a plurality of Li-III-VI2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and electronics operable for detecting and a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons. Each of the crystals is formed by: melting the Group III element; adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and adding the Group VI element to the single phase Li-III compound and heating. Optionally, each of the crystals is also formed by doping with a Group IV element activator.

Abstract translation: 一种中子成像系统，包括：排列成阵列的多个Li-III-VI2半导体晶体，其中III表示III族元素，VI表示VI族元素; 以及电子器件，其可操作以在存在中子的情况下检测多个晶体中的每个晶体中的电荷并对中子进行成像。 每个晶体通过以下方式形成：熔融III族元素; 以允许Li和III族元素反应的速率将Li添加到熔融的III族元素中，从而提供单相Li-III化合物; 并将VI族元素加入到单相Li-III化合物中并加热。 任选地，每个晶体也通过掺杂IV族元素活化剂形成。

公开(公告)号：US09334581B2

公开(公告)日：2016-05-10

申请号：US13658591

申请日：2012-10-23

Applicant: BACOCK & WILCOX TECHNICAL SERVICES Y-12, L.L.C. ,  FISK UNIVERSITY

Inventor： Ashley Stowe ,  Arnold Burger

IPC: C30B11/08 ,  C30B11/12 ,  C30B29/46

CPC classification number: G01T3/08 ,  C30B11/06 ,  C30B11/12 ,  C30B29/46 ,  G01N23/046 ,  G01N23/05

Abstract: A method for synthesizing I-III-VI2 compounds, including: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound under heat, with mixing, and/or via vapor transport. The Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C. Preferably, the Group I element consists of a neutron absorber and the group III element consists of In or Ga. The Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C. Preferably, the Group VI element consists of S, Se, or Te. Optionally, the method also includes doping with a Group IV element activator.

Abstract translation: 一种合成I-III-VI2化合物的方法，包括：熔融III族元素; 以熔化的III族元素以允许I族和III族元素反应从而提供单相I-III化合物的速率加入I族元素; 并在加热下，混合和/或通过蒸汽输送将VI族元素加入到单相I-III化合物中。 III族元素在约200摄氏度和约700摄氏度之间的温度下熔化。优选地，第I族元素由中子吸收剂组成，III族元素由In或Ga组成，VI族元素和 单相I-III化合物被加热到约700℃至约1000℃的温度。优选地，第VI族元素由S，Se或Te组成。 任选地，该方法还包括掺杂IV族元素活化剂。

公开(公告)号：US20150378031A1

公开(公告)日：2015-12-31

申请号：US14843150

申请日：2015-09-02

Applicant: Ashley C. STOWE ,  Arnold BURGER

Inventor： Ashley C. STOWE ,  Arnold BURGER

IPC: G01T1/20

CPC classification number: G01T1/20 ,  C30B11/06 ,  C30B11/12 ,  C30B29/46

Abstract: A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermal neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.

Abstract translation: 一种光检测器装置，包括：闪烁体材料，其可操作用于接收入射辐射并响应于发射光子; 耦合到所述闪烁体材料的光电检测器材料，其可操作用于接收由所述闪烁体材料发射的光子并产生响应的电流，其中所述光电检测器材料包括黄铜矿半导体晶体; 以及耦合到所述光电检测器材料的电路，其可操作以基于由所述光电检测器材料产生的电流来表征所述入射辐射。 可选地，闪烁体材料包括伽马闪烁体材料，并且所接收的入射辐射包括伽马射线。 可选地，光电检测器材料还可操作用于接收热中子并产生响应的电流。 该电路还可操作用于基于由光电检测器材料产生的电流来表征热中子。