公开(公告)号：US20240355593A1

公开(公告)日：2024-10-24

申请号：US18136276

申请日：2023-04-18

Applicant: Tokyo Electron Limited

Inventor： Melvin Verbaas ,  Einosuke Tsuda

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01L21/683

CPC classification number: H01J37/32715 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32568 ,  H01L21/6833 ,  H01J37/32082 ,  H01J2237/002 ,  H01J2237/2007

Abstract: An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.

公开(公告)号：US20240331982A1

公开(公告)日：2024-10-03

申请号：US18738213

申请日：2024-06-10

Applicant: TOTO LTD.

Inventor： Yasutaka NITTA ,  Takuma WADA ,  Ryoto TAKIZAWA

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32477 ,  C23C16/4583 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/6831 ,  H01J2237/2007

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer. A thickness of the first particle-resistant layer is thinner than a thickness of the second particle-resistant layer.

公开(公告)号：US20240297023A1

公开(公告)日：2024-09-05

申请号：US18026528

申请日：2021-12-02

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Jong Chan LEE ,  Seong Min NAM

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32568 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/334

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a housing having an interior space, a lower electrode unit supporting a substrate in the interior space, an upper electrode unit facing the lower electrode unit, and a gas supply unit supplying a process gas to the interior space, wherein the upper electrode unit includes a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body supporting the dielectric plate, wherein the support body and the dielectric plate are combined with each other to form a buffer space and the gas supply unit supplies the process gas to the interior space via the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the interior space.

公开(公告)号：US12074074B2

公开(公告)日：2024-08-27

申请号：US17340114

申请日：2021-06-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Po-Ju Chen ,  Sheng-Jen Cheng ,  Cha-Hsin Chao ,  Chih-Teng Liao

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/687 ,  G01F1/00 ,  G01N15/00 ,  G01N15/06 ,  G01N15/075 ,  G01P3/00

CPC classification number: H01L22/20 ,  H01J37/32935 ,  H01L21/68742 ,  G01F1/00 ,  G01N15/00 ,  G01N2015/0046 ,  G01N15/06 ,  G01N15/075 ,  G01P3/00 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/24578 ,  H01J2237/24585

Abstract: The present disclosure provides a method and a system therefore for processing wafer. The method includes: monitoring a distribution of particles in a chamber while processing the wafer; determining at least one parameter according to the distribution of the particles for configuring at least one device of the chamber; configuring the at least one device of the chamber according to the at least one parameter; and processing another wafer based on a recipe after configuring the at least one device of the chamber.

公开(公告)号：US12074014B2

公开(公告)日：2024-08-27

申请号：US17897445

申请日：2022-08-29

Applicant: TOTO LTD.

Inventor： Yuki Sasaki ,  Jun Shiraishi ,  Yutaka Momiyama ,  Reo Kawano

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01J37/32715 ,  H01J2237/2007

Abstract: An electrostatic chuck includes a ceramic dielectric substrate, a base plate, a bonding part, a gas inlet path, a counterbore part, and a ceramic porous part. The bonding part is located between the ceramic dielectric substrate and the base plate. The gas inlet path extends through the ceramic dielectric substrate, the base plate, and the bonding part. The gas inlet path includes a first hole part, a second hole part, and a third hole part. The first hole part is positioned at the ceramic dielectric substrate. The second hole part is positioned at the base plate. The third hole part is positioned at the bonding part. The counterbore part is located in at least one of the first hole part or the second hole part. The ceramic porous part is located in the counterbore part. The ceramic porous part includes an exposed surface exposed in the third hole part.

公开(公告)号：US20240274413A1

公开(公告)日：2024-08-15

申请号：US18366085

申请日：2023-08-07

Applicant: NGK INSULATORS, LTD.

Inventor： Yusuke AKAI ,  Junpei NAKA

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J2237/2007

Abstract: A wafer placement table includes: a ceramic plate having a pore extending vertically through the ceramic plate, a conductive plate bonded to a lower surface of the ceramic plate and having a gas supply passage; a plug chamber that is in communication with the pore and the gas supply passage; an insulating gas passage plug located in the plug chamber and a dense insulating film. The dense insulating film allows ventilation at a gas outlet portion that is a portion of an upper surface of the insulating gas passage plug and serves as a gas flow path to the pore, and the dense insulating film is disposed across the upper surface of the conductive plate and the upper surface of the insulating gas passage plug to cover a boundary between the upper surface of the conductive plate and the upper surface of the insulating gas passage plug.

公开(公告)号：US20240274412A1

公开(公告)日：2024-08-15

申请号：US18641911

申请日：2024-04-22

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA ,  Akira TAKAHASHI ,  Daisuke TAMURA ,  Tsubasa SHIMOMURA

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32183 ,  H01J2237/2007

Abstract: With respect to a method of reducing leakage of a heat transfer gas, the method includes mounting an edge ring on a main body including an electrostatic chuck; attracting the edge ring to the electrostatic chuck; increasing a temperature of the edge ring; decreasing the temperature of the edge ring; and repeating the increasing of the temperature and the decreasing of the temperature a plurality of times.

公开(公告)号：US20240239716A1

公开(公告)日：2024-07-18

申请号：US18562171

申请日：2022-05-23

Applicant: AMOSENSE CO.,LTD

Inventor： Ji Hyung LEE

IPC: C04B41/50 ,  C04B35/584 ,  C04B35/626 ,  C04B35/632 ,  C04B41/00 ,  C04B41/45 ,  C04B41/87 ,  H01J37/32 ,  H01L21/683 ,  H05B3/26

CPC classification number: C04B41/5045 ,  C04B35/584 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/632 ,  C04B41/0036 ,  C04B41/4529 ,  C04B41/5031 ,  C04B41/87 ,  H01J37/32724 ,  H01L21/6833 ,  H05B3/265 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6584 ,  C04B2235/9607 ,  C04B2235/9669 ,  H01J2237/2007

Abstract: An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

公开(公告)号：US20240234107A1

公开(公告)日：2024-07-11

申请号：US18399821

申请日：2023-12-29

Applicant: Tokyo Electron Limited

Inventor： Masato MINAMI ,  Tomoya WATANABE

IPC: H01J37/32 ,  H02N13/00

CPC classification number: H01J37/32715 ,  H02N13/00 ,  H01J2237/2007

Abstract: An electrostatic chuck having a support surface configured to support a substrate, wherein the support surface is configured by a plurality of protrusions that is formed at a same height and is arranged in a direction in which the support surface extends, wherein a distance between the plurality of protrusions adjacent to each other is in a range of 0.2 mm to 0.5 mm, and wherein, in a plan view of the support surface, an area occupancy rate of the plurality of protrusions in a 1 mm2 unit of the support surface is in a range of 3% to 40%.

公开(公告)号：US20240234078A1

公开(公告)日：2024-07-11

申请号：US18095951

申请日：2023-01-11

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Adam Faust ,  Yosef Basson

IPC: H01J37/02 ,  H01J37/20

CPC classification number: H01J37/026 ,  H01J37/20 ,  H01J2237/0041 ,  H01J2237/2007

Abstract: A device for discharging an electrostatic chuck located within a vacuum chamber, the device includes a plasma distribution unit that is configured to receive plasma from an external plasma source that is located outside the vacuum chamber, and perform a distribution of the plasma within the vacuum chamber that discharges the electrostatic chuck. The device also includes a controller for controlling the distribution of the plasma; wherein the distribution of the plasma occurs during a plasma distribution period that is shorter than a duration of a plasma based cleaning process of the electrostatic chuck.