Method of forming vias in semiconductor substrates and resulting structures
    91.
    发明授权
    Method of forming vias in semiconductor substrates and resulting structures 有权
    在半导体衬底和结构中形成通孔的方法

    公开(公告)号:US07855140B2

    公开(公告)日:2010-12-21

    申请号:US11781083

    申请日:2007-07-20

    IPC分类号: H01L21/4763

    CPC分类号: H01L21/76898

    摘要: Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from an active surface through a conductive element thereon and a portion of the substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from a back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by laser ablation or drilling from the back surface of the substrate followed by dry etching to complete the through via.

    摘要翻译: 公开了在半导体衬底中形成贯通孔的方法和所得到的结构。 在一个实施例中,可以通过从活性表面通过其上的导电元件和导电元件下面的基底的一部分形成部分通孔来形成通孔。 然后可以通过从后表面的激光烧蚀或钻孔来完成通孔。 在另一个实施例中,部分通孔可以通过激光烧蚀或从衬底的背面钻孔到其中的预定距离来形成。 通孔可以通过形成延伸通过导电元件和下面的衬底以与激光钻孔的部分通孔相交的部分通孔从活性表面完成。 在另一个实施例中,可以首先通过激光烧蚀或从衬底的背面进行钻孔形成部分通孔,然后通过干蚀刻来完成通孔。

    Methods for testing semiconductor devices methods for protecting the same from electrostatic discharge events during testing, and methods for fabricating inserts for use in testing semiconductor devices
    94.
    发明授权
    Methods for testing semiconductor devices methods for protecting the same from electrostatic discharge events during testing, and methods for fabricating inserts for use in testing semiconductor devices 有权
    用于测试半导体器件的方法,用于在测试期间保护其免受静电放电事件的方法,以及用于制造用于测试半导体器件的插入件的方法

    公开(公告)号:US07709279B2

    公开(公告)日:2010-05-04

    申请号:US10827806

    申请日:2004-04-20

    IPC分类号: H01L21/66 H01L23/58

    摘要: An apparatus and method for providing external electrostatic discharge (ESD) protection to a semiconductor device, which may or may not include its own ESD protection, are provided. An ESD structure may be associated with each interconnect, either individually or shared between two or more interconnects. Each interconnect includes a contact tip for establishing a temporary electrical connection with a bond pad of the semiconductor device and a contact pad for electrically interfacing the bond pad with external burn-in and/or test equipment. The ESD structure may be implemented, for example, as a fusible element or a shunting element, such as a pair of diodes, a diode-resistor network, or a pair of transistors. The interconnect may be employed as part of an insert including a plurality of interconnects that provides ESD protection to a plurality of integrated circuits of at least one semiconductor device.

    摘要翻译: 提供了一种用于向半导体器件提供外部静电放电(ESD)保护的装置和方法,其可以包括或可以不包括其自身的ESD保护。 ESD结构可以与每个互连相关联,单独地或在两个或更多个互连之间共享。 每个互连包括用于与半导体器件的接合焊盘建立临时电连接的接触尖端和用于将接合焊盘与外部老化和/或测试设备电接口的接触焊盘。 ESD结构可以实现为例如可熔元件或分流元件,例如一对二极管,二极管 - 电阻器网络或一对晶体管。 互连可以用作插入件的一部分,其包括向至少一个半导体器件的多个集成电路提供ESD保护的多个互连。

    Microelectronic imagers having front side contacts
    95.
    发明授权
    Microelectronic imagers having front side contacts 有权
    具有前侧触点的微电子成像器

    公开(公告)号:US07646075B2

    公开(公告)日:2010-01-12

    申请号:US11177905

    申请日:2005-07-07

    申请人: Salman Akram

    发明人: Salman Akram

    IPC分类号: H01L21/00

    摘要: Microelectronic imager assemblies with front side contacts and methods for fabricating such microelectronic imager assemblies are disclosed herein. In one embodiment, a microelectronic imager assembly comprises a workpiece including a substrate having a front side and a backside. The assembly further includes a plurality of imaging dies on and/or in the substrate. The imaging dies include image sensors at the front side of the substrate, integrated circuitry operatively coupled to the image sensors, and bond-pads at the front side of the substrate electrically coupled to the integrated circuitry. The assembly also includes a plurality of stand-offs at the front side of the substrate. The stand-offs have apertures aligned with corresponding image sensors. The assembly further includes a plurality of external contacts electrically coupled to corresponding bond-pads and projecting away from the dies.

    摘要翻译: 本文公开了具有前侧触点的微电子成像器组件和用于制造这种微电子成像器组件的方法。 在一个实施例中,微电子成像器组件包括包括具有正面和背面的衬底的工件。 组件还包括在衬底上和/或衬底中的多个成像管芯。 成像管芯包括在衬底的前侧的图像传感器,可操作地耦合到图像传感器的集成电路以及电耦合到集成电路的衬底的前侧的接合焊盘。 组件还包括在基板的前侧的多个支座。 支架具有与对应的图像传感器对准的孔。 组件还包括电耦合到对应的接合焊盘并远离模具突出的多个外部触点。

    Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers
    97.
    发明授权
    Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers 有权
    具有集成光学器件的微电子成像器和用于制造这种微电子成像器的方法

    公开(公告)号:US07547877B2

    公开(公告)日:2009-06-16

    申请号:US12222038

    申请日:2008-07-31

    申请人: Salman Akram

    发明人: Salman Akram

    IPC分类号: H01J5/02 H01L21/00

    摘要: Microelectronic imagers with integrated optical devices and methods for manufacturing imagers. The imagers, for example, typically have an imaging unit including a first substrate and an image sensor on and/or in the first substrate. An embodiment of an optical device includes a stand-off having a compartment configured to contain the image sensor. The stand-off has a coefficient of thermal expansion at least substantially the same as that of the first substrate. The optical device can further include an optics element in alignment with the compartment of the stand-off. The stand-off can be formed by etching a compartment into a silicon wafer or a wafer of another material having a coefficient of thermal expansion at least substantially the same as that of the substrate upon which the image sensor is formed. The optics elements can be formed integrally with the stand-offs or separately attached to a cover supported by the stand-offs.

    摘要翻译: 具有集成光学器件的微电子成像器和用于制造成像器的方法。 成像器例如通常具有在第一基板上和/或第一基板中的成像单元,其包括第一基板和图像传感器。 光学装置的实施例包括具有被配置为容纳图像传感器的隔间的支架。 支架具有与第一基板的热膨胀系数至少基本相同的热膨胀系数。 光学装置还可以包括与支架隔间对准的光学元件。 可以通过将隔室蚀刻成具有与形成图像传感器的基板的至少基本相同的热膨胀系数的另一材料的硅晶片或晶片来形成间隔。 光学元件可以与支架一体地形成,或者单独地附接到由支架支撑的盖。

    Optical device and assembly for use with imaging dies, and wafer-label imager assembly
    99.
    发明授权
    Optical device and assembly for use with imaging dies, and wafer-label imager assembly 有权
    用于成像管芯和晶片级成像器组件的光学器件和组件

    公开(公告)号:US07511262B2

    公开(公告)日:2009-03-31

    申请号:US11209524

    申请日:2005-08-22

    申请人: Salman Akram

    发明人: Salman Akram

    IPC分类号: H01J5/02

    摘要: Microelectronic imagers with integrated optical devices and methods for manufacturing imagers. The imagers, for example, typically have an imaging unit including a first substrate and an image sensor on and/or in the first substrate. An embodiment of an optical device includes a stand-off having a compartment configured to contain the image sensor. The stand-off has a coefficient of thermal expansion at least substantially the same as that of the first substrate. The optical device can further include an optics element in alignment with the compartment of the stand-off. The stand-off can be formed by etching a compartment into a silicon wafer or a wafer of another material having a coefficient of thermal expansion at least substantially the same as that of the substrate upon which the image sensor is formed. The optics elements can be formed integrally with the stand-offs or separately attached to a cover supported by the stand-offs.

    摘要翻译: 具有集成光学器件的微电子成像器和用于制造成像器的方法。 成像器例如通常具有在第一基板上和/或第一基板中的成像单元,其包括第一基板和图像传感器。 光学装置的实施例包括具有被配置为容纳图像传感器的隔间的支架。 支架具有与第一基板的热膨胀系数至少基本相同的热膨胀系数。 光学装置还可以包括与支架隔间对准的光学元件。 可以通过将隔室蚀刻成具有与形成图像传感器的基板的至少基本相同的热膨胀系数的另一材料的硅晶片或晶片来形成间隔。 光学元件可以与支架一体地形成,或者单独地附接到由支架支撑的盖。