公开(公告)号：US09125272B2

公开(公告)日：2015-09-01

申请号：US14524060

申请日：2014-10-27

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsin-Chieh Huang

IPC: H05B33/08 ,  F21V23/04 ,  F21Y101/02

CPC classification number: H05B33/0845 ,  F21V23/0457 ,  F21Y2115/10 ,  H05B33/0851 ,  H05B33/0869

Abstract: A lighting apparatus includes a board, a first light-emitting diode (LED) bank disposed on the board, a second LED bank disposed on the board, a light detector coupled to the first LED bank, and a driver coupled to the light detector and to each of the first and second LED banks. The first LED bank includes a plurality of first LEDs. The second LED bank includes a plurality of second LEDs, and is electrically coupled to the first LED bank. The light detector is configured to detect an output decay of light from each of the first LEDs. The second LEDs in the second LED bank are initially deactivated and are subsequently activated in response to light output decay of the first LEDs.

Abstract translation: 照明装置包括板，布置在板上的第一发光二极管（LED）组，设置在板上的第二LED组，耦合到第一LED组的光检测器和耦合到光检测器的驱动器， 到第一和第二LED组中的每一个。 第一LED组包括多个第一LED。 第二LED组包括多个第二LED，并且电耦合到第一LED组。 光检测器被配置为检测来自每个第一LED的光的输出衰减。 第二LED组中的第二LED最初被去激活，随后响应于第一LED的光输出衰减而被激活。

公开(公告)号：US09105818B2

公开(公告)日：2015-08-11

申请号：US14294537

申请日：2014-06-03

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Chi-Xiang Tseng ,  Hsiao-Wen Lee ,  Min-Sheng Wu ,  Tien-Ming Lin

IPC: H01L33/50 ,  H01L33/06 ,  H01L33/46

CPC classification number: H01L33/505 ,  H01L33/46 ,  H01L2933/0041

Abstract: The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is disposed over the second doped semiconductor layer and over side surfaces of the first and second doped semiconductor layers and the light-emitting layer. The photo-conversion layer has an angular profile.

Abstract translation: 本公开涉及照明装置。 照明装置包括第一掺杂半导体层。 发光层设置在第一掺杂半导体层上。 第二掺杂半导体层设置在发光层上。 第二掺杂半导体层具有与第一掺杂半导体层不同的导电类型。 光转换层设置在第二掺杂半导体层和第一和第二掺杂半导体层和发光层的越侧表面上。 光转换层具有角度轮廓。

公开(公告)号：US09099593B2

公开(公告)日：2015-08-04

申请号：US13616299

申请日：2012-09-14

Applicant: Zhen-Yu Li ,  Hon-Way Lin ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

Inventor： Zhen-Yu Li ,  Hon-Way Lin ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

IPC: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  F21K99/00 ,  F21S6/00 ,  F21V3/04 ,  F21V7/22 ,  F21Y101/02 ,  H01L21/02 ,  H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  F21V29/74

CPC classification number: H01L33/06 ,  B82Y20/00 ,  F21K9/00 ,  F21S6/00 ,  F21V3/049 ,  F21V7/22 ,  F21V29/74 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L21/02458 ,  H01L21/02507 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/3407 ,  H01S5/34333

Abstract: The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.

Abstract translation: 本公开涉及一种照明装置。 照明装置包括n掺杂半导体化合物层，与n掺杂半导体化合物层间隔开的p掺杂半导体化合物层和设置在第一半导体化合物层和第二半导体化合物层之间的多量子阱（MQW） 半导体复合层。 MQW包括多个交替的第一和第二层。 MQW的第一层具有基本均匀的厚度。 第二层相对于与p掺杂半导体化合物层的距离具有渐变厚度。 位于与p掺杂半导体化合物层最相邻的第二层的子集中掺杂有p型掺杂剂。 掺杂的第二层具有相对于从p掺杂半导体层的距离而变化的渐变掺杂浓度水平。

公开(公告)号：US09093618B2

公开(公告)日：2015-07-28

申请号：US14305067

申请日：2014-06-16

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Chi-Xiang Tseng ,  Hsiao-Wen Lee ,  Min-Sheng Wu ,  Tien-Min Lin

IPC: H01L33/50 ,  H01L33/06 ,  H01L33/46 ,  H01L33/54

CPC classification number: H01L33/504 ,  H01L33/46 ,  H01L33/505 ,  H01L33/508 ,  H01L33/54 ,  H01L2933/0041

Abstract: The present disclosure involves lighting apparatus. The lighting apparatus includes a light-emitting device. The light-emitting device includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is coated around the light-emitting device. A lens houses the light-emitting device and the photo-conversion layer within. The lens includes a first sub-layer and a second sub-layer. The first and second sub-layers have different characteristics.

Abstract translation: 本公开涉及照明装置。 照明装置包括发光装置。 发光器件包括第一掺杂半导体层。 发光层设置在第一掺杂半导体层上。 第二掺杂半导体层设置在发光层上。 第二掺杂半导体层具有与第一掺杂半导体层不同的导电类型。 光转换层涂覆在发光器件周围。 A透镜容纳发光器件和光转换层。 透镜包括第一子层和第二子层。 第一和第二子层具有不同的特征。

公开(公告)号：US09074738B2

公开(公告)日：2015-07-07

申请号：US14272600

申请日：2014-05-08

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Sheng-Shin Guo ,  Chih-Hsuan Sun ,  Tien-Ming Lin ,  Wei-Yu Yeh

IPC: F21V9/16 ,  F21V3/00 ,  F21K99/00 ,  F21V29/74 ,  F21Y101/02 ,  F21V3/02 ,  F21V13/02 ,  F21Y113/00 ,  F21V29/507

CPC classification number: F21K9/64 ,  F21K9/232 ,  F21K9/90 ,  F21V3/02 ,  F21V13/02 ,  F21V29/507 ,  F21V29/70 ,  F21V29/74 ,  F21Y2101/00 ,  F21Y2113/13 ,  F21Y2115/10 ,  Y10T29/4913

Abstract: A lamp includes a substrate, a plurality of light-emitting devices located over the substrate, and a cap that is located over the light-emitting devices. The plurality of light-emitting devices include a first subset of light-emitting devices and a second subset of light-emitting devices. Each light-emitting device in the first subset is free of a phosphor coating. Each light-emitting device in the second subset includes a phosphor coating. The cap has both photo-conversion properties and light-scattering properties, and the cap is located over the first subset of the light-emitting devices but exposes the second subset of the light-emitting devices.

Abstract translation: 灯包括衬底，位于衬底上方的多个发光器件和位于发光器件上方的帽。 多个发光器件包括发光器件的第一子集和发光器件的第二子集。 第一子集中的每个发光器件都不含磷光体涂层。 第二子集中的每个发光器件包括磷光体涂层。 盖具有光转换性质和光散射性质，并且帽位于发光器件的第一子集之上，但暴露出发光器件的第二子集。

公开(公告)号：US09065015B2

公开(公告)日：2015-06-23

申请号：US14038881

申请日：2013-09-27

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

IPC: H01L33/32 ,  H01L33/30 ,  H01L21/02 ,  H01L33/00 ,  H01L33/12 ,  H01L33/16

CPC classification number: H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

Abstract: A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.

Abstract translation: 一种器件包括：衬底; 设置在所述基板上的III-V族半导体层; 以及设置在III-V族半导体层上的籽晶层。 基板是印刷电路板。 III-V族半导体层包括多量子阱（MQW）层，p型掺杂层和n型掺杂层。 种子层包括多个微型元件。 微型元件各自含有适于外延生长III-V族III族半导体层的单晶材料。 微型元件共同覆盖III-V族III族半导体层的表面的100％以下。

公开(公告)号：US20150108424A1

公开(公告)日：2015-04-23

申请号：US14057053

申请日：2013-10-18

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/38

Abstract: A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.

Abstract translation: 发光二极管（LED）形成在通过研磨然后蚀刻蓝宝石衬底而从LED除去的蓝宝石衬底上。 使用单一研磨剂或多个研磨剂将蓝宝石衬底首先研磨至第一指定厚度。 通过干蚀刻或湿法蚀刻去除剩余的蓝宝石衬底。

公开(公告)号：US09006770B2

公开(公告)日：2015-04-14

申请号：US13110642

申请日：2011-05-18

Applicant: Wei-Yu Yeh ,  Pei-Wen Ko ,  Chih-Hsuan Sun ,  Hsueh-Hung Fu

Inventor： Wei-Yu Yeh ,  Pei-Wen Ko ,  Chih-Hsuan Sun ,  Hsueh-Hung Fu

IPC: H01L33/00 ,  H01L33/64 ,  H05K1/02 ,  H01L33/62 ,  H05K1/05

CPC classification number: H01L33/641 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0075 ,  H05K1/0203 ,  H05K1/0206 ,  H05K1/05 ,  H05K2201/10106 ,  H05K2201/10969 ,  H01L2924/00

Abstract: A light emitting diode (LED) carrier assembly includes an LED die mounted on a silicon submount, a middle layer that is thermally conductive and electrically isolating disposed below the silicon submount, and a printed circuit board (PCB) disposed below the middle layer. The middle layer is bonded with the silicon submount and the PCB.

Abstract translation: 发光二极管（LED）载体组件包括安装在硅基座上的LED管芯，设置在硅基座下方的导热和电隔离的中间层以及设置在中间层下方的印刷电路板（PCB）。 中间层与硅基座和PCB结合。

公开(公告)号：US09000455B2

公开(公告)日：2015-04-07

申请号：US13792136

申请日：2013-03-10

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Ming-Shing Lee ,  Chyi-Shyuan Chern ,  Hsin-Hsien Wu ,  Yung-Chang Chen ,  Ming-Hua Lo ,  Chu-Ching Tsai

IPC: H01L33/08 ,  H01L21/00

CPC classification number: H01L33/08 ,  C23C4/01 ,  H01L21/00 ,  H01L21/68721 ,  H01L2933/0041

Abstract: A shadow mask assembly includes a securing assembly configured to hold a substrate that is configured to hold a plurality of dies. The securing assembly includes a number of guide pins and a shadow mask comprising holes for the guide pins, said holes allowing the guide pins freedom of motion in one direction. The securing assembly includes a number of embedded magnets configured to secure the shadow mask to the securing assembly.

Abstract translation: 荫罩组件包括固定组件，其被配置为保持构造成保持多个模具的衬底。 固定组件包括多个引导销和一个包括用于引导销的孔的荫罩，所述孔允许导销在一个方向上自由运动。 固定组件包括多个嵌入式磁体，其构造成将荫罩固定到固定组件。

公开(公告)号：US08921884B2

公开(公告)日：2014-12-30

申请号：US14284491

申请日：2014-05-22

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Ching-Yi Chen ,  Yu-Sheng Tang ,  Hao-Yu Yang ,  Hsin-Hung Chen ,  Tzu-Wen Shih

IPC: H01L33/00 ,  F21K99/00 ,  F21V13/02 ,  F21V13/14 ,  H01L33/58 ,  H01L33/54 ,  H01L33/50

CPC classification number: H01L33/58 ,  F21K9/64 ,  F21V13/02 ,  F21V13/14 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A lighting apparatus includes a substrate. One or more light-emitting devices are disposed over the substrate. A lens is molded over the substrate and over the one or more light-emitting devices. A recess is disposed in the lens. The recess circumferentially surrounds the one or more light-emitting devices in a top view. The recess is at least partially filled with phosphor particles.

Abstract translation: 照明装置包括基板。 一个或多个发光器件设置在衬底上。 在基板上并在一个或多个发光器件上模制透镜。 在透镜中设置凹部。 在俯视图中，该凹部周向地包围一个或多个发光器件。 该凹部至少部分地被磷光体颗粒填充。