公开(公告)号：US20170152402A1

公开(公告)日：2017-06-01

申请号：US15338526

申请日：2016-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Huang ,  Horng-Huei Tseng ,  Chi-Ming Yang ,  Jeng-Jyi Hwang

IPC: C09G1/04 ,  H01L21/306 ,  B24B37/20

CPC classification number: C09G1/04 ,  B24B37/20 ,  C09G1/02 ,  H01L21/30617 ,  H01L21/30625 ,  H01L21/3212

Abstract: The present disclosure relates to a method of forming a CMP slurry that is free of pH-adjusters (i.e., chemicals added solely for the purpose of adjusting a pH of a CMP slurry), and an associated a pH-adjuster free CMP slurry. In some embodiments, the method is performed by forming a CMP slurry having a first pH value. A desired pH value of the CMP slurry is determined. A chelating agent configured to bond to metallic ions is provided to the CMP slurry. The chelating agent is configured to adjust a pH value of the CMP slurry from the first pH value to the desired pH value. By using the chelating agent to adjust a pH value of the CMP slurry to achieve a desired pH value, the method is able to form a CMP slurry that is free of pH-adjusters, thereby reducing the cost and complexity of the CMP slurry.

公开(公告)号：US20170130097A1

公开(公告)日：2017-05-11

申请号：US15410942

申请日：2017-01-20

Applicant: MITSUI MINING & SMELTING CO., LTD.

Inventor： Mikimasa Horiuchi ,  Ryutaro Kuroda ,  Yasuhide Yamaguchi

IPC: C09G1/02 ,  C09K3/14 ,  B24B7/10

CPC classification number: C09G1/02 ,  B24B7/10 ,  C08K2003/2262 ,  C09K3/1409

Abstract: The present invention provides an abrasive material capable of polishing difficult-to-polish silicon carbide at a high degree of surface precision. The present invention relates to an abrasive material including manganese dioxide particles having a non-needle-like shape possessing a ratio of the longitudinal axis to the transverse axis of the particles observed with a scanning electron microscope of 3.0 or less. The abrasive material is preferable if the average particle size DSEM of the longitudinal axis of the observed particles is 1.0 μm or less, and if the particle size D50 of the volume-based cumulative fraction of 50% in laser diffraction/scattering particle size distribution measurement is 2.0 μm or less.

公开(公告)号：US09633898B2

公开(公告)日：2017-04-25

申请号：US14920104

申请日：2015-10-22

Applicant: EBARA CORPORATION

Inventor： Akira Susaki ,  Keiichi Kurashina

IPC: H01L21/768 ,  C23F1/18 ,  C09K13/00 ,  C09G1/02 ,  C09G1/04 ,  C09K13/06 ,  H01L21/306 ,  H01L21/3213 ,  H05K3/06 ,  C23F1/10 ,  C23F1/14 ,  C23F1/16 ,  C23F1/44 ,  C09K13/02 ,  H01L23/00

CPC classification number: H01L21/76883 ,  C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  C09K13/02 ,  C09K13/06 ,  C23F1/10 ,  C23F1/14 ,  C23F1/16 ,  C23F1/18 ,  C23F1/44 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76879 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13157 ,  H05K3/067 ,  H01L2924/00014 ,  H01L2924/01029

Abstract: An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

公开(公告)号：US09631122B1

公开(公告)日：2017-04-25

申请号：US14925054

申请日：2015-10-28

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin Dockery ,  Helin Huang ,  Lin Fu

IPC: C09G1/02 ,  C23F3/04 ,  B24B37/24

CPC classification number: C09G1/02 ,  B24B37/24 ,  C23F3/04 ,  C23F3/06

Abstract: Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.

公开(公告)号：US09616542B2

公开(公告)日：2017-04-11

申请号：US13756826

申请日：2013-02-01

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Ryouhei Hasegawa ,  Harunobu Matsui ,  Daijitsu Harada ,  Masaki Takeuchi

IPC: B24B1/00 ,  C09G1/02 ,  B24B37/04

CPC classification number: B24B1/00 ,  B24B37/044 ,  C09G1/02

Abstract: A rough surface of a starting synthetic quartz glass substrate is polished to a mirror finish, using a polishing slurry containing tetragonal or cubic zirconia.

公开(公告)号：US20170081552A1

公开(公告)日：2017-03-23

申请号：US15126513

申请日：2015-03-09

Applicant: FUJIMI INCORPORATED

Inventor： Yasuyuki YAMATO

IPC: C09G1/02 ,  H01L21/768 ,  C09K3/14 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/7684

Abstract: To provide a polishing composition that can be used as an alternative of a polishing composition containing cerium oxide abrasive grains in STI and other such CMP applications, and to provide a polishing method and a method for producing a substrate using this polishing composition.A polishing composition being used in applications for polishing a layer that contains a substance having a pH range presenting a positive zeta potential in an aqueous solution of pH 6 or lower, wherein the polishing composition contains abrasive grains (A), abrasive grains (B), and a pH adjusting agent, and the abrasive grains (B) has a negative zeta potential in an aqueous solution of pH 6 or lower, and the value of the average secondary particle diameter of the abrasive grains (B) is less than the value of the average secondary particle diameter of the abrasive grains (A) and is 15 nm or less and the polishing composition has a pH of 6 or lower.

公开(公告)号：US20170072530A1

公开(公告)日：2017-03-16

申请号：US15341130

申请日：2016-11-02

Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： RAJIV K. SINGH ,  KANNAN BALASUNDARAM ,  ARUL CHAKKARAVARTHI ARJUNAN ,  DEEPIKA SINGH ,  WEI BAI

IPC: B24B37/20 ,  C09G1/02 ,  C23F3/00

CPC classification number: B24B37/20 ,  C09G1/02 ,  C09G1/04 ,  C23F3/00

Abstract: A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size

Abstract translation: CMP方法使用包含胶体金属氧化物或胶态半导体氧化物颗粒（胶体颗粒）在水中的浆料。 从（i）多分散性> 30％的胶体粒子中选择至少一种粒子特征，和（ii）包含具有平均初级粒径> 50nm的胶体粒子的混合粒子类型与平均一次粒径< 25nm。 将具有氧化铝表面的基板放入CMP设备中，并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。 多分散性通过多分散性公式确定，其分布宽度（w）涉及第二较大粒径的宽度w1和宽度w2。 多分散性公式=（w2-w1）×100 / dav，其含有体积和天数的胶体粒子的总量的63％是胶体粒子的平均粒径。

公开(公告)号：US09593259B2

公开(公告)日：2017-03-14

申请号：US14440688

申请日：2013-11-19

Applicant: NITTA HAAS INCORPORATED

Inventor： Takayuki Matsushita

IPC: C09G1/02 ,  C23F1/30 ,  C09K3/14 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C23F1/30 ,  H01L21/02024

Abstract: A polishing composition of the present invention contains: a polyvinyl alcohol resin having a 1,2-diol structure in its side chain, the polyvinyl alcohol resin being a copolymer of a monomer represented by Formula (1) below and a vinyl ester monomer; an organic acid; and abrasive grains whose surfaces are chemically modified so as to have a minus zeta potential on the surfaces in a solution with a pH of 2.0 or more and to have no isoelectric point: (where R1 to R6 each independently denote a hydrogen atom or an organic group, X denotes a single bond or a linking group, and R7 and R8 each independently denote a hydrogen atom or R9—CO— (where R9 denotes an alkyl group)).

Abstract translation: 本发明的研磨用组合物含有：侧链具有1,2-二醇结构的聚乙烯醇树脂，聚乙烯醇树脂为下述式（1）表示的单体与乙烯基酯单体的共聚物， 有机酸; 表面被化学改性以在pH为2.0以上的溶液中的表面具有负ζ电位且不具有等电点的磨粒：（其中R 1至R 6各自独立地表示氢原子或有机物 基团，X表示单键或连接基团，并且R 7和R 8各自独立地表示氢原子或R 9 -CO-（其中R 9表示烷基））。

公开(公告)号：US09593022B2

公开(公告)日：2017-03-14

申请号：US14255447

申请日：2014-04-17

Applicant: SILBOND CORPORATION

Inventor： Kenneth Warnshuis ,  George Haag ,  Peter Rau ,  Keith Hirsch

IPC: C09K13/06 ,  C01B33/141 ,  C09G1/02

CPC classification number: C01B33/141 ,  C01B33/1415 ,  C09G1/02

Abstract: A colloidal sol and a method of making colloidal sol that is capable of controlling the resulting particle size and more specifically, using a potassium hydroxide process to obtain a colloidal sol having a single peak of average particle sizes.

Abstract translation: 胶态溶胶和能够控制所得粒度的胶体溶胶的制备方法，更具体地说，使用氢氧化钾方法获得具有单峰平均粒径的胶体溶胶。

公开(公告)号：US20170066102A1

公开(公告)日：2017-03-09

申请号：US14849066

申请日：2015-09-09

Applicant: Cabot Microelectronics Corporation

Inventor： Prativa PANDEY ,  Juyeon CHANG ,  Brian REISS

IPC: B24B37/04 ,  C09G1/02

CPC classification number: B24B37/044 ,  C08K2003/2213 ,  C09G1/02

Abstract: The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract translation: 本发明提供一种化学机械抛光组合物，其包含，主要由...组成或由（a）约0.01wt。 ％至约1wt。 湿法二氧化铈的百分比，（b）约10ppm至约200ppm的包含季氨基的阳离子聚合物，（c）约10ppm至约2000ppm的非氟化非离子表面活性剂，（d）氨基酸 ，和（e）水，其中抛光组合物具有约3至约8的pH。本发明还提供了用抛光组合物抛光基材的方法。