公开(公告)号：US5420073A

公开(公告)日：1995-05-30

申请号：US192246

申请日：1994-02-07

Applicant: Giulio DiGiacomo ,  Jung-Ihl Kim ,  Chandrasekhar Narayan ,  Sampath Purushothaman

Inventor： Giulio DiGiacomo ,  Jung-Ihl Kim ,  Chandrasekhar Narayan ,  Sampath Purushothaman

IPC: H01L23/12 ,  H01L21/28 ,  H01L23/485 ,  H01L23/498 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H05K3/24 ,  H05K3/34 ,  H05K3/38 ,  H01L21/44

CPC classification number: H01L24/05 ,  H01L23/49811 ,  H01L23/49866 ,  H01L23/532 ,  H01L24/03 ,  H01L24/48 ,  H05K3/244 ,  H01L2224/04042 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05172 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15787 ,  H05K3/388

Abstract: This invention relates generally to structure and method for preventing metal diffusion between a noble metal layer and an adjoining non-noble metal layer, and more specifically to new structures and methods for providing a superbarrier structure between copper and an adjoining noble metal layer. This is achieved by sequentially deposited a layer of non-noble metal, a layer of titanium, a layer of molybdenum, and a layer of noble or relatively less noble metal as the interconnecting metallurgy. This invention also relates to an improved multilayer metallurgical pad or metallurgical structure for mating at least a portion of a pin or a connector or a wire to a substrate.

Abstract translation: 本发明一般涉及用于防止贵金属层与相邻的非贵金属层之间的金属扩散的结构和方法，更具体地涉及在铜和邻接的贵金属层之间提供超级结构的新结构和方法。 这是通过依次沉积一层非贵金属，一层钛，一层钼，以及一层贵重或相对较低贵重金属作为互连冶金而实现的。 本发明还涉及用于将销或连接器或电线的至少一部分配合到衬底的改进的多层冶金垫或冶金结构。

公开(公告)号：US5328079A

公开(公告)日：1994-07-12

申请号：US34683

申请日：1993-03-19

Applicant: Ranjan J. Mathew ,  Arnold Smith ,  Luu T. Nguyen

Inventor： Ranjan J. Mathew ,  Arnold Smith ,  Luu T. Nguyen

IPC: H01L21/607 ,  H01R43/02 ,  H01L21/60

CPC classification number: H01L24/85 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/4945 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85191 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85986 ,  H01L24/78 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14

Abstract: Certain components of an integrated circuit package are disclosed herein including one or more dies, each of which has an array of die output/input bond pads, and die support means, for example a substrate or leadframe, which includes an array of electrically conductive leads. There is also disclosed herein a technique for wire bond connecting the bond pads of a particular die to either the bond pads of a second die or to the electrically conductive leads of the substrate or leadframe using a thermosonic or thermocompression ball bonding tool. In accordance with this technique, where at least one die is involved, connections are made to the bond pads of that die by means of stitch bonding in a way which does not damage the die.

Abstract translation: 本文公开了集成电路封装的某些部件，其包括一个或多个管芯，每个管芯具有管芯输出/输入接合焊盘的阵列，以及管芯支撑装置，例如衬底或引线框架，其包括导电引线阵列 。 本文还公开了一种用于使用热超声或热压球接合工具将特定管芯的接合焊盘连接到第二管芯的接合焊盘或基板或引线框架的导电引线之间的引线接合的技术。 根据这种技术，在涉及至少一个管芯的情况下，通过以不损坏管芯的方式通过针脚接合而对该管芯的接合焊盘进行连接。

公开(公告)号：US5298793A

公开(公告)日：1994-03-29

申请号：US929472

申请日：1992-08-13

Applicant: Jutaro Kotani ,  Masahiro Ihara ,  Hideaki Nakura ,  Masami Yokozawa

Inventor： Jutaro Kotani ,  Masahiro Ihara ,  Hideaki Nakura ,  Masami Yokozawa

IPC: H01L21/28 ,  H01L21/607 ,  H01L23/485 ,  H01L23/532 ,  H01L29/43 ,  H01L23/48 ,  H01L29/44

CPC classification number: H01L24/05 ,  H01L23/532 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/85043 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/30105

Abstract: There is disclosed a semiconductor device having an electrode for wire bonding, comprising a first aluminum layer, a nickel-aluminum alloy layer, and a second aluminum layer. The electrode is suitable for bonding with copper wire, since the electrode withstands a wide range of bonding conditions--mechanical pressure, ultrasonic wave power and such, and permits a reliable electrical connection to be maintained.

Abstract translation: 公开了一种具有用于引线接合的电极的半导体器件，包括第一铝层，镍 - 铝合金层和第二铝层。 该电极适用于与铜线接合，因为电极可承受大范围的接合条件 - 机械压力，超声波功率等，并且可以保持可靠的电连接。

公开(公告)号：US5252854A

公开(公告)日：1993-10-12

申请号：US717262

申请日：1991-06-18

Applicant: Junichi Arita ,  Akihiko Iwaya ,  Tomoo Matsuzawa ,  Masahiro Ichitani

Inventor： Junichi Arita ,  Akihiko Iwaya ,  Tomoo Matsuzawa ,  Masahiro Ichitani

IPC: H01L21/60 ,  H01L23/495 ,  H01L23/50 ,  H01L23/02

CPC classification number: H01L24/06 ,  H01L23/4951 ,  H01L23/49534 ,  H01L23/49537 ,  H01L23/50 ,  H01L24/05 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48799 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181

Abstract: Disclosed is a resin-molded type semiconductor device having a thin package while avoiding short-circuit of wires with a common inner lead. In the construction thereof, a common inner lead constituted by a thin metal sheet is fixed onto a circuit-forming surface of a rectangular semiconductor chip substantially in parallel with longer sides of the chip and substantially in a central region of the chip, and a plurality of inner leads for signals, which are in the form of a frame, are stacked and fixed onto the common inner lead; then these components are molded with resin.

Abstract translation: 公开了具有薄封装的树脂模制型半导体器件，同时避免了具有公共内引线的电线短路。 在其构造中，将由薄金属片构成的公共内引线固定到矩形半导体芯片的电路形成表面上，该矩形半导体芯片与芯片的较长边基本上平行，并且基本上在芯片的中心区域中，并且多个 以框架形式的信号的内引线被堆叠并固定在公共内引线上; 那么这些组分用树脂模制。

公开(公告)号：US5150193A

公开(公告)日：1992-09-22

申请号：US653244

申请日：1991-02-11

Applicant: Toshihiro Yasuhara ,  Masachika Masuda ,  Gen Murakami ,  Kunihiko Nishi ,  Masanori Sakimoto ,  Ichio Shimizu ,  Akio Hoshi ,  Sumio Okada ,  Tooru Nagamine

Inventor： Toshihiro Yasuhara ,  Masachika Masuda ,  Gen Murakami ,  Kunihiko Nishi ,  Masanori Sakimoto ,  Ichio Shimizu ,  Akio Hoshi ,  Sumio Okada ,  Tooru Nagamine

IPC: H01L23/495

CPC classification number: H01L24/85 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49541 ,  H01L24/05 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45644 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/83385 ,  H01L2224/83855 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01205 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/351

Abstract: The present invention consists in that a through hole of large area is provided in a die pad or a tab, thereby to prevent a resin from cracking at the rear surface of a surface-packaging resin package in a high-temperature soldering atmosphere of vapor-phase reflow or the like, whereby a resin-molded surface-packaged IC of high reliability is provided.

Abstract translation: 本发明的特征在于，在芯片焊盘或突片中设置大面积的贯通孔，防止树脂在气相成膜用高温焊接气氛中的表面封装树脂封装的背面开裂， 相回流等，由此提供了高可靠性的树脂模制表面封装IC。

公开(公告)号：US5148964A

公开(公告)日：1992-09-22

申请号：US645650

申请日：1991-01-25

Applicant: Yasuhiko Shimizu

Inventor： Yasuhiko Shimizu

IPC: H01L21/60 ,  B23K20/10 ,  H01L21/607

CPC classification number: H01L24/85 ,  B23K20/10 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85206 ,  H01L24/45 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/20752

Abstract: A wire bonding method for connecting an electrode pad on a semiconductor chip and an inner lead of a lead frame through a metal wire is described. The wire bonding method is performed by moving a bonding tool holding the wire metal. The method comprises the steps of calculating the height difference between the electrode pad and the inner lead, determining a reverse movement amount of the bonding tool according to the height difference, and reversing the bonding tool horizontally at a predetermined level by the determined reverse movement amount while raising vertically the bonding tool. According to the present invention, the amount of reverse movement of the bonding tool may be automatically changed in accordance with the height difference and without reliance on an operator.

Abstract translation: 描述了通过金属线将半导体芯片上的电极焊盘和引线框架的内部引线连接的引线接合方法。 引线接合方法通过移动保持金属丝的接合工具来进行。 该方法包括以下步骤：计算电极焊盘和内引线之间的高差，根据高差来确定焊接工具的反向移动量，并将焊接工具水平地按预定水平反转确定的反向移动量 同时垂直抬起接合工具。 根据本发明，焊接工具的反向移动量可以根据高度差而自动地改变，而不依赖于操作者。

公开(公告)号：US5103283A

公开(公告)日：1992-04-07

申请号：US587595

申请日：1990-09-24

Applicant: Larry R. Hite

Inventor： Larry R. Hite

IPC: H01L23/64

CPC classification number: H01L24/49 ,  H01L23/642 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49109 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10S257/916

Abstract: An integrated circuit package is disclosed which has decoupling capacitors mounted within the cavity. A first embodiment has a thin-film capacitor mounted to the die attach of the header, with a first wire bond connecting the top surface to a lead finger of the header, and with a second wire bond connecting the top surface to the semiconductor chip mounted in the package. A second embodiment allows for decoupling of the power supply to a reference voltage other than that of the substrate, by providing a stacked capacitor where the top capacitor has a smaller cross-sectional area than the lower capacitor. Bond wires connect the top surface of the top capacitor to a first power supply lead, such as V.sub.cc, and to the V.sub.cc bond pad of the chip. The top surface of the lower capacitor, and consequently the lower surface of the top capacitor, are connected by bond wires to the reference supply (V.sub.ss) lead of the package and bond pad of the chip.

Abstract translation: 公开了一种集成电路封装，其具有安装在腔内的去耦电容器。 第一实施例具有安装到集管的管芯附着的薄膜电容器，其中第一引线键将顶表面连接到集管的引线指，并且第二引线接合将顶表面连接到安装的半导体芯片 在包装中。 第二实施例允许通过提供堆叠电容器将电源去耦到除基板之外的参考电压，其中顶部电容器具有比下部电容器更小的横截面面积。 接合线将顶部电容器的顶表面连接到第一电源引线（例如Vcc）和芯片的Vcc接合焊盘。 下部电容器的顶表面以及顶部电容器的下表面通过接合线连接到芯片的封装和焊盘的参考电源（Vss）引线。

公开(公告)号：US5047833A

公开(公告)日：1991-09-10

申请号：US599148

申请日：1990-10-17

Applicant: Herbert J. Gould

Inventor： Herbert J. Gould

IPC: H01L23/29 ,  H01L23/482 ,  H01L23/485

CPC classification number: H01L24/48 ,  H01L23/298 ,  H01L23/4827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/4847 ,  H01L2224/48799 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49107 ,  H01L2224/85201 ,  H01L2224/85801 ,  H01L2224/85815 ,  H01L2924/00011 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: A semiconductor device having an MOS-type gate and a main power conduction path through the thickness of the chip has a first main contact on the front surface of the device and a second main contact on the back surface of the device. The contact on the front surface overlies junctions defining the MOSGATE structure and has a solderable electrode. The solderable electrode is enclosed by a dam of amorphous silicon. Solder will not wet amorphous silicon so that the solder is contained within the periphery-defined by the amorphous silicon. The solderable electrode permits heat to be withdrawn from the front surface of the chip and equalizes the current density over all areas underlying the front main contact to prevent hot spots. The solderable contact reduces damage to the cells underlying the front contact as could occur during compression bonding of a lead to a conventional non-solderable aluminum contact.

Abstract translation: 具有MOS型栅极的半导体器件和穿过芯片的厚度的主要功率传导路径在器件的前表面上具有第一主触点，在器件背面具有第二主触点。 前表面上的接触覆盖限定MOSGATE结构的结，并具有可焊接电极。 可焊电极由非晶硅的阻挡层封闭。 焊料不会润湿非晶硅，使得焊料包含在由非晶硅限定的外围。 可焊接电极允许从芯片的前表面引出热量，并将电流密度均匀化在前主触头下方的所有区域，以防止热点。 可焊接触点可以降低对前触点下面的电池的损坏，这可能是因为将引线压接在传统的不可焊接的铝触点之间。

公开(公告)号：US4845543A

公开(公告)日：1989-07-04

申请号：US67969

申请日：1987-06-29

Applicant: Susumu Okikawa ,  Hiroshi Mikino ,  Hiromichi Suzuki ,  Wahei Kitamura ,  Daiji Sakamoto

Inventor： Susumu Okikawa ,  Hiroshi Mikino ,  Hiromichi Suzuki ,  Wahei Kitamura ,  Daiji Sakamoto

IPC: B23K20/00 ,  C22C21/00 ,  H01L21/603 ,  H01L23/49

CPC classification number: H01L24/85 ,  B23K20/007 ,  C22C21/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/83805 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/29 ,  H01L24/73 ,  H01L24/78 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01205 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/20753

Abstract: A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.

Abstract translation: 一种半导体器件，其中通过由含有预定量的至少一种添加元素的铝制成的接合线来连接颗粒和外部引线，所述接合线含有0.05至3.0重量％的至少一种选自铁 和钯，或含有0.05-3.0重量％的至少一种选自镍，铁和钯的第一元素和0.05-3.0重量％的至少一种选自镁，锰和硅的第二元素 从而提高了导线的耐腐蚀性，提高了导线的断裂强度。 接合线可以通过球接合连接到半导体芯片，并且公开了使用维氏硬度为30-50的球，能够将接合线与例如半导体芯片上的铝焊盘良好地接合到 实现。 具有这种硬度的球可以通过使用特定的铝合金组合物和球的淬火来提供。 接合线的形状和高度通过在接合之前的特定温度下对接合线进行退火或通过使用用于接合线的材料的特定组成来控制。 可以由铝或含有例如约1.5重量％的镁的铝组合物制成的接合线的环形和接合性被控制在最佳状态。

公开(公告)号：US4442967A

公开(公告)日：1984-04-17

申请号：US353724

申请日：1982-03-01

Applicant: Hermanus A. van de Pas ,  Huibert A. Knobbout

Inventor： Hermanus A. van de Pas ,  Huibert A. Knobbout

IPC: H01H11/06 ,  H01L21/28 ,  H01L21/60 ,  H01L21/603 ,  H01L21/607 ,  H01L23/485 ,  H05K3/24 ,  H01L21/441

CPC classification number: H01L24/11 ,  H01L2224/1134 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/78301 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L24/12 ,  H01L24/45 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12033

Abstract: A method of providing a raised contact portion on a contact area of an electronic microcircuit in which a ball is formed at one end of a metal wire by means of thermal energy, the ball is pressed against a contact area of the electronic microcircuit and is connected to said contact area. A weakening is created in the wire near the ball and the wire is then severed at the area of the weakening to provide the desired raised contact portion.

Abstract translation: 一种在电子微电路的接触区域上提供凸起的接触部分的方法，其中通过热能在金属线的一端形成球，所述球被压靠在所述电子微电路的接触区域上并被连接 到所述接触区域。 在靠近球的线中产生弱化，然后在弱化区域切断线，以提供所需的凸起接触部分。