DEPOSITION OF HETEROATOM-DOPED CARBON FILMS
    182.
    发明申请
    DEPOSITION OF HETEROATOM-DOPED CARBON FILMS 有权
    沉积碳化硅膜

    公开(公告)号:US20150206739A1

    公开(公告)日:2015-07-23

    申请号:US14161313

    申请日:2014-01-22

    Abstract: Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped carbon-containing hardmasks have high etch selectivity and density and also a low compressive stress, which will reduce or eliminate problems with wafer bow. Heteroatoms incorporated into the hardmask include sulfur, phosphorous, nitrogen, oxygen, and fluorine, all of which have low reactivity towards commonly used etchants. When sulfur is used as the heteroatom, the hardmask is easily removed, which simplifies the fabrication of NAND devices, DRAM devices, and other devices.

    Abstract translation: 沉积易于除去的杂原子掺杂的含碳层。 含碳层可以用作硬掩模。 掺杂掺杂碳的硬掩模具有高蚀刻选择性和密度以及低压缩应力,这将减少或消除晶片弓的问题。 掺入硬掩模的杂原子包括硫,磷,氮,氧和氟,所有这些对于常用的蚀刻剂具有低反应性。 当使用硫作为杂原子时,硬掩模容易去除,这简化了NAND​​器件,DRAM器件和其它器件的制造。

    FLOWABLE SILICON-CARBON-OXYGEN LAYERS FOR SEMICONDUCTOR PROCESSING
    183.
    发明申请
    FLOWABLE SILICON-CARBON-OXYGEN LAYERS FOR SEMICONDUCTOR PROCESSING 有权
    用于半导体加工的可流动的硅 - 氧 - 氧层

    公开(公告)号:US20140302688A1

    公开(公告)日:2014-10-09

    申请号:US13934863

    申请日:2013-07-03

    Abstract: Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react in to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.

    Abstract translation: 描述了在图案化衬底上形成电介质层的方法。 所述方法可以包括在化学气相沉积室内的无等离子体衬底处理区域中组合含硅和碳的前体和自由基氧前体。 含硅和碳的前体和自由基氧前体反应以在图案化的衬底上沉积可流动的硅 - 碳 - 氧层。 所得膜相对于热氧化硅和其它标准电介质具有低的湿蚀刻速率比。

    LOW COST FLOWABLE DIELECTRIC FILMS
    184.
    发明申请
    LOW COST FLOWABLE DIELECTRIC FILMS 有权
    低成本流动电介质膜

    公开(公告)号:US20140073144A1

    公开(公告)日:2014-03-13

    申请号:US13668657

    申请日:2012-11-05

    Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

    Abstract translation: 描述形成电介质层的方法。 该方法通过使用局部等离子体的化学气相沉积法沉积含硅膜。 含硅膜在低基板温度下沉积时是可流动的。 将硅前体(例如甲硅烷基胺,高级硅烷或卤代硅烷)输送到衬底处理区域并在局部等离子体中激发。 第二等离子体蒸气或气体与硅衬底加工区域中的硅前体结合,并且可包括氨,氮(N 2),氩,氢(H 2)和/或氧(O 2)。 已经发现本文公开的与这些蒸汽/气体组合组合的设备结构在基板温度低于或约200℃时导致可流动的沉积,当使用较低功率激发局部等离子体时。

    NESTED-LOOP PLASMA ENHANCED ATOMIC LAYER DEPOSITION

    公开(公告)号:US20240420952A1

    公开(公告)日:2024-12-19

    申请号:US18209700

    申请日:2023-06-14

    Abstract: Exemplary methods of semiconductor processing may include iteratively repeating a deposition cycle several times on a substrate disposed within a processing region of a semiconductor processing chamber. Each deposition cycle may include depositing a silicon-containing material on the substrate and exposing the silicon-containing material to a first oxygen plasma to convert the silicon-containing material to a silicon-and-oxygen-containing material. After the iterative repeating of the deposition cycle, the method may include performing a densification operation by exposing the silicon-and-oxygen-containing material to a second oxygen plasma to produce a densified silicon-and-oxygen-containing material where the quality of the densified silicon-and-oxygen-containing material is greater than the silicon-and-oxygen-containing material. The method may further include iteratively repeating the iteratively repeated deposition cycles and the densification operation several times.

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