公开(公告)号：US20090294911A1

公开(公告)日：2009-12-03

申请号：US12127357

申请日：2008-05-27

申请人： Reza A. Pagaila ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Byung Tai Do

IPC分类号： H01L23/52 ,  H01L21/304

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/481 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.

摘要翻译： 通过在晶片上形成半导体管芯之间的间隙来制造半导体器件。 绝缘材料沉积在间隙中。 从半导体晶片的第一侧去除绝缘材料的第一部分以形成第一凹口。 第一缺口小于半导体管芯的厚度。 导电材料沉积到第一凹口中以在间隙内形成导电通孔的第一部分。 从半导体晶片的第二侧去除绝缘材料的第二部分以形成第二凹口。 第二凹口延伸穿过绝缘材料到第一凹口。 导电材料沉积到第二凹口中以在间隙内形成导电通孔的第二部分。 半导体晶片通过间隙被分离，以分离半导体管芯。

公开(公告)号：US20090261466A1

公开(公告)日：2009-10-22

申请号：US12492360

申请日：2009-06-26

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Rajendra D. Pendse

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Rajendra D. Pendse

IPC分类号： H01L25/065 ,  H01L21/50

CPC分类号： H01L23/3128 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/86 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by forming a conductive layer over a temporary carrier. The conductive layer includes a wettable pad. A stud bump is formed over the wettable pad. The stud bump can be a stud bump or stacked bumps. A semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the stud bump. A first interconnect structure is formed over a first surface of the encapsulant. The first interconnect structure includes a first IPD and is electrically connected to the stud bump. The carrier is removed. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The second interconnect structure includes a second IPD. The first or second IPD includes a capacitor, resistor, or inductor. The semiconductor devices are stackable and electrically connected through the stud bump.

摘要翻译： 通过在临时载体上形成导电层制成半导体器件。 导电层包括可湿性垫。 在可湿性垫上形成柱状凸块。 螺栓凸块可以是螺柱凸块或堆叠的凸块。 半导体管芯安装在载体上。 密封剂沉积在半导体管芯上并且在螺柱凸块周围。 在密封剂的第一表面上形成第一互连结构。 第一互连结构包括第一IPD并且电连接到螺柱凸块。 载体被移除。 在与第一互连结构相对的密封剂的第二表面上形成第二互连结构。 第二互连结构包括第二IPD。 第一或第二IPD包括电容器，电阻器或电感器。 半导体器件可叠置并通过柱形凸起电连接。

公开(公告)号：US09406619B2

公开(公告)日：2016-08-02

申请号：US13350692

申请日：2012-01-13

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Dioscoro A. Merilo

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Dioscoro A. Merilo

IPC分类号： H01L23/552 ,  H01L23/538 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498 ,  H01L25/10 ,  H01L23/00

CPC分类号： H01L23/5389 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a pre-fabricated shielding frame mounted over a sacrificial substrate and semiconductor die. An encapsulant is deposited through an opening in the shielding frame around the semiconductor die. A first portion of the shielding frame to expose the encapsulant. Removing the first portion also leaves a second portion of the shielding frame over the semiconductor die as shielding from interference. A third portion of the shielding frame around the semiconductor die provides a conductive pillar. A first interconnect structure is formed over a first side of the encapsulant, shielding frame, and semiconductor die. The sacrificial substrate is removed. A second interconnect structure over the semiconductor die and a second side of the encapsulant. The shielding frame can be connected to low-impedance ground point through the interconnect structures or TSV in the semiconductor die to isolate the die from EMI and RFI, and other inter-device interference.

摘要翻译： 半导体器件包括安装在牺牲衬底和半导体管芯上的预制屏蔽框架。 通过围绕半导体管芯的屏蔽框架中的开口沉积密封剂。 屏蔽框架的第一部分以露出密封剂。 移除第一部分还将屏蔽框架的第二部分留在半导体管芯上，作为屏蔽不受干扰。 围绕半导体管芯的屏蔽框架的第三部分提供导电柱。 在密封剂，屏蔽框架和半导体管芯的第一侧上形成第一互连结构。 去除牺牲衬底。 半导体管芯上的第二互连结构和密封剂的第二侧。 屏蔽框架可以通过半导体芯片中的互连结构或TSV连接到低阻抗接地点，以将裸片与EMI和RFI以及其他器件间干扰隔离。

公开(公告)号：US08810011B2

公开(公告)日：2014-08-19

申请号：US13571020

申请日：2012-08-09

申请人： Reza A. Pagaila

发明人： Reza A. Pagaila

IPC分类号： H01L23/552

CPC分类号： H01L23/49838 ,  H01L21/486 ,  H01L21/56 ,  H01L21/768 ,  H01L23/147 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655

摘要： A semiconductor device has a plurality of conductive vias formed partially through a substrate. A conductive layer is formed over the substrate and electrically connected to the conductive vias. A semiconductor die is mounted over the substrate. An encapsulant is deposited over the semiconductor die and substrate. A trench is formed through the encapsulant around the semiconductor die. A shielding layer is formed over the encapsulant. The trench is formed partially through the substrate and the shielding layer is formed in the trench partially through the substrate. An insulating layer can be formed in the trench prior to forming the shielding layer. A portion of the substrate is removed to expose the conductive vias. An interconnect structure is formed over the substrate opposite the semiconductor die. The interconnect structure is electrically connected to the conductive vias. The shielding layer is electrically connected to the interconnect structure.

摘要翻译： 半导体器件具有部分地通过衬底形成的多个导电通孔。 导电层形成在衬底上并电连接到导电通孔。 半导体管芯安装在衬底上。 密封剂沉积在半导体管芯和衬底上。 通过半导体管芯周围的密封剂形成沟槽。 在密封剂上形成屏蔽层。 沟槽部分地形成穿过衬底，并且屏蔽层部分地通过衬底形成在沟槽中。 在形成屏蔽层之前，可以在沟槽中形成绝缘层。 去除衬底的一部分以暴露导电通孔。 在与半导体管芯相对的衬底上形成互连结构。 互连结构电连接到导电通孔。 屏蔽层电连接到互连结构。

公开(公告)号：US08791015B2

公开(公告)日：2014-07-29

申请号：US13098426

申请日：2011-04-30

申请人： Reza A. Pagaila

发明人： Reza A. Pagaila

IPC分类号： H01L21/50

CPC分类号： H01L21/76805 ,  H01L21/3205 ,  H01L21/76898 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A semiconductor wafer contains a plurality of semiconductor die separated by a non-active area of the semiconductor wafer. A plurality of contact pads is formed on an active surface of the semiconductor die. A first insulating layer is formed over the semiconductor wafer. A portion of the first insulating layer is removed to expose the contact pads on the semiconductor die. An opening is formed partially through the semiconductor wafer in the active surface of the semiconductor die or in the non-active area of the semiconductor wafer. A second insulating layer is formed in the opening in the semiconductor wafer. A shielding layer is formed over the active surface. The shielding layer extends into the opening of the semiconductor wafer to form a conductive via. A portion of a back surface of the semiconductor wafer is removed to singulate the semiconductor die.

摘要翻译： 半导体晶片包含由半导体晶片的非有源区域分离的多个半导体管芯。 在半导体管芯的有源表面上形成多个接触焊盘。 在半导体晶片上形成第一绝缘层。 去除第一绝缘层的一部分以露出半导体管芯上的接触焊盘。 半导体晶片的有源表面中的半导体晶片或半导体晶片的非有源区域部分地形成开口。 第二绝缘层形成在半导体晶片的开口中。 在活性表面上形成屏蔽层。 屏蔽层延伸到半导体晶片的开口中以形成导电通孔。 半导体晶片的背面的一部分被去除以对半导体管芯进行分割。

公开(公告)号：US08742579B2

公开(公告)日：2014-06-03

申请号：US13405094

申请日：2012-02-24

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

IPC分类号： H01L21/00

CPC分类号： H01L24/18 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1902 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.

摘要翻译： 通过提供牺牲衬底并在牺牲衬底上沉积粘合剂层来制造半导体器件。 在粘合剂层上形成第一导电层。 聚合物柱形成在第一导电层上。 在聚合物柱上方形成第二导电层以产生具有内聚合物芯的导电柱。 半导体管芯或部件安装在衬底上。 密封剂沉积在半导体管芯或部件上并且围绕导电柱。 第一互连结构形成在密封剂的第一侧上。 第一互连结构电连接到导电柱。 去除牺牲基底和粘合剂层。 在与第一互连结构相对的密封剂的第二侧上形成第二互连结构。 第二互连结构电连接到导电柱。

公开(公告)号：US08729694B2

公开(公告)日：2014-05-20

申请号：US13171341

申请日：2011-06-28

申请人： Byung Tai Do ,  Reza A. Pagaila

发明人： Byung Tai Do ,  Reza A. Pagaila

IPC分类号： H01L23/48

CPC分类号： H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/19 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/04105 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

摘要： A semiconductor wafer has a plurality of semiconductor die separated by a peripheral region. A trench is formed in the peripheral region of the wafer. A via is formed on the die. The trench extends to and is continuous with the via. A first conductive layer is deposited in the trench and via to form conductive TSV. The first conductive layer is conformally applied or completely fills the trench and via. The trench has a larger area than the vias which accelerates formation of the first conductive layer. A second conductive layer is deposited over a front surface of the die. The second conductive layer is electrically connected to the first conductive layer. The first and second conductive layers can be formed simultaneously. A portion of a back surface of the wafer is removed to expose the first conductive layer. The die can be stacked and electrically interconnected through the TSVs.

摘要翻译： 半导体晶片具有由周边区域分离的多个半导体管芯。 在晶片的周边区域形成沟槽。 在管芯上形成通孔。 沟槽延伸到并且与通孔连续。 第一导电层沉积在沟槽和通孔中以形成导电TSV。 第一导电层被保形地施加或完全填充沟槽和通孔。 沟槽具有比加速第一导电层的形成的通孔更大的面积。 第二导电层沉积在管芯的前表面上。 第二导电层电连接到第一导电层。 第一和第二导电层可以同时形成。 去除晶片的后表面的一部分以露出第一导电层。 模具可以通过TSV堆叠和电互连。

公开(公告)号：US08623702B2

公开(公告)日：2014-01-07

申请号：US13034133

申请日：2011-02-24

申请人： Reza A. Pagaila

发明人： Reza A. Pagaila

IPC分类号： H01L21/00

CPC分类号： H01L23/481 ,  H01L21/568 ,  H01L23/3121 ,  H01L24/03 ,  H01L24/05 ,  H01L24/80 ,  H01L24/96 ,  H01L25/0657 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/03002 ,  H01L2224/0346 ,  H01L2224/03901 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05562 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08 ,  H01L2224/08145 ,  H01L2224/08235 ,  H01L2224/16225 ,  H01L2224/24 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24145 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/82 ,  H01L2224/821 ,  H01L2224/83 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/96 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/07811 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00015 ,  H01L2224/03 ,  H01L2224/80 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A semiconductor device has a plurality of semiconductor die mounted to a carrier. An encapsulant is deposited over the carrier around a peripheral region of the semiconductor die. A plurality of vias is formed through the encapsulant. A first conductive layer is conformally applied over a sidewall of the vias to form conductive vias. A second conductive layer is formed over a first surface of the semiconductor die between the conductive vias and contact pads of the semiconductor die. The first and second conductive layers can be formed during the same manufacturing process. A third conductive layer is formed over a second surface of the semiconductor die opposite the first surface of the semiconductor die. The third conductive layer is electrically connected to the conductive vias. A plurality of semiconductor die is stacked and electrically connected through the conductive vias and second and third conductive layers.

摘要翻译： 半导体器件具有安装到载体上的多个半导体管芯。 密封剂沉积在载体周围的半导体管芯的周边区域上。 通过密封剂形成多个通孔。 第一导电层保形地施加在通孔的侧壁上以形成导电通孔。 在半导体管芯的导电通孔和接触焊盘之间的半导体管芯的第一表面上形成第二导电层。 第一和第二导电层可以在相同的制造过程中形成。 在半导体管芯的与半导体管芯的第一表面相对的第二表面上形成第三导电层。 第三导电层电连接到导电通孔。 多个半导体管芯通过导电通孔和第二和第三导电层堆叠并电连接。

公开(公告)号：US08592950B2

公开(公告)日：2013-11-26

申请号：US12775338

申请日：2010-05-06

申请人： Reza A. Pagaila ,  Linda Pei Ee Chua ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Linda Pei Ee Chua ,  Byung Tai Do

IPC分类号： H01L23/544

CPC分类号： H01L23/481 ,  H01L21/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3157 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/02371 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/82039 ,  H01L2224/9222 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die.

摘要翻译： 通过提供具有半导体管芯的第一半导体晶片来制造半导体器件。 在半导体管芯之间形成间隙。 绝缘材料沉积在间隙中。 去除绝缘材料的一部分以形成通过（THV）的第一通孔。 导电衬里共形沉积在第一个THV中。 焊料材料设置在第一THV的导电衬里之上。 具有半导体管芯的第二半导体晶片设置在第一晶片上。 第二THV形成在第二晶片的管芯之间的间隙中。 导电衬里共形沉积在第二个THV中。 焊料材料设置在第二THV之上。 第二个THV与第一个THV对齐。 焊料材料被回流以在间隙内形成导电通孔。 将间隙分开以分离半导体管芯。

公开(公告)号：US08575769B2

公开(公告)日：2013-11-05

申请号：US13492668

申请日：2012-06-08

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/36 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00

摘要： A semiconductor device has a first thermally conductive layer formed over a first surface of a semiconductor die. A second surface of the semiconductor die is mounted to a sacrificial carrier. An encapsulant is deposited over the first thermally conductive layer and sacrificial carrier. The encapsulant is planarized to expose the first thermally conductive layer. A first insulating layer is formed over the second surface of the semiconductor die and a first surface of the encapsulant. A portion of the first insulating layer over the second surface of the semiconductor die is removed. A second thermally conductive layer is formed over the second surface of the semiconductor die within the removed portion of the first insulating layer. An electrically conductive layer is formed within the insulating layer around the second thermally conductive layer. A heat sink can be mounted over the first thermally conductive layer.