Thin Recon Interposer Package Without TSV for Fine Input/Output Pitch Fan-Out
    17.
    发明申请
    Thin Recon Interposer Package Without TSV for Fine Input/Output Pitch Fan-Out 有权
    精密输入/输出间距扇出的TSV的精简内窥镜封装

    公开(公告)号:US20170011993A1

    公开(公告)日:2017-01-12

    申请号:US15205991

    申请日:2016-07-08

    Abstract: Semiconductor devices and manufacturing methods are provided for using a Recon interposer that provides a high density interface between the active semiconductor die and the semiconductor substrate and also provides the pitch fan-out. For example, a circuit assembly includes a silicon pad layer including a plurality of metal pads, each metal pad configured to receive a corresponding bump of a plurality of bumps. The circuit assembly further includes an oxide layer disposed on the silicon pad layer and an interposer dielectric layer disposed on the oxide layer. The interposer dielectric layer includes a plurality of routing traces that connect a top surface of the redistribution layer to a bottom surface of the interposer dielectric layer. The circuit assembly further includes an integrated circuit (IC) die attached to the plurality of routing traces at the top surface of the interposer dielectric layer using a plurality of IC bumps and an encapsulating material encapsulating at least a portion of the silicon pad layer, the oxide layer, the interposer dielectric layer, and the IC die to provide structural support for the circuit assembly.

    Abstract translation: 提供半导体器件和制造方法,用于使用在活性半导体管芯和半导体衬底之间提供高密度界面的Recon插入件,并且还提供间距扇出。 例如,电路组件包括包括多个金属焊盘的硅焊盘层,每个金属焊盘被配置为接收多个凸块的相应凸块。 电路组件还包括设置在硅衬垫层上的氧化物层和设置在氧化物层上的介入层电介质层。 中介层介电层包括将再分布层的顶表面连接到插入层介电层的底表面的多个布线迹线。 电路组件还包括使用多个IC凸块和封装硅衬垫层的至少一部分的封装材料,在内插器电介质层的顶表面处附接到多个布线迹线的集成电路(IC)裸片, 氧化层,中介层介电层和IC芯片,为电路组件提供结构支撑。

    Apparatus and Method to Monitor Thermal Runaway in a Semiconductor Device
    18.
    发明申请
    Apparatus and Method to Monitor Thermal Runaway in a Semiconductor Device 有权
    监测半导体器件热失控的装置和方法

    公开(公告)号:US20170003339A1

    公开(公告)日:2017-01-05

    申请号:US14789624

    申请日:2015-07-01

    Inventor: Sam Ziqun ZHAO

    CPC classification number: G01R31/2628 G01R31/2872 G01R31/3008 G01R31/3012

    Abstract: An apparatus and methods are provided that more accurately detect the onset of thermal runaway in a device and timely control it. According to one embodiment, changes in stand-by current and temperature of a transistor device are measured and are used to be compared to some thresholds to trigger the device to respond before the onset thermal runaway. According to another embodiment, stand-by current is measured and is compared to some thresholds to trigger the device to respond before the onset thermal runaway.

    Abstract translation: 提供了一种更准确地检测设备中热失控的发生并及时控制的装置和方法。 根据一个实施例,测量晶体管器件的待机电流和温度的变化,并将其用于与某些阈值进行比较,以触发器件在发生热失控之前进行响应。 根据另一个实施例,测量备用电流并将其与某些阈值进行比较,以触发器件在发生热失控之前作出响应。

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