Abstract:
An integrated circuit (IC) package includes an IC die having a first surface and a second surface opposite of the first surface. The IC package includes first contact members coupled to the second surface of the IC die. The IC package includes a bottom substrate having a first surface and a second surface opposite of the first surface, where the first surface of the bottom substrate is coupled to the second surface of the IC die via the first contact members. The IC package includes an interposer substrate coupled to the first surface of the IC die via an adhesive material, where the adhesive material is disposed on at least a surface of the interposer substrate. The IC package includes second contact members coupled along a periphery of the interposer substrate, where the interposer substrate is coupled to the first surface of the bottom substrate via the second contact members.
Abstract:
There are disclosed herein various implementations of semiconductor packages including a bridge interposer. One exemplary implementation includes a first active die having a first portion situated over the bridge interposer, and a second portion not situated over the bridge interposer. The semiconductor package also includes a second active die having a first portion situated over the bridge interposer, and a second portion not situated over the bridge interposer. The second portion of the first active die and the second portion of the second active die include solder balls mounted on a package substrate, and are configured to communicate electrical signals to the package substrate utilizing the solder balls and without utilizing through-semiconductor vias (TSVs).
Abstract:
Methods and apparatuses for improved integrated circuit (IC) packages are described herein. In an aspect, an IC device package includes an IC die having a contact pad, where the contact pad is located on a hotspot of the IC die. The hotspot is thermally coupled to a thermal interconnect member. In an aspect, the package is encapsulated in a mold compound. In a further aspect, a heat spreader is attached to the mold compound, and is thermally coupled to the thermal interconnect member. In another aspect, a thermal interconnect member thermally is coupled between the heat spreader and the substrate.
Abstract:
Methods of assembling a ball grid array (BGA) package is provided. One method includes providing a tape substrate that has a first surface and a second surface, attaching a first surface of a stiffener to the first substrate surface, mounting an IC die to the second stiffener surface, mounting a heat spreader to the IC die, and attaching a plurality of solder balls to the second substrate surface.
Abstract:
Embodiments of provide an integrated circuit (IC) device. The IC device can include a substrate having first and second opposing surfaces, an IC die electrically coupled to the first surface of the substrate, a plurality of contact members coupled to the first surface of the substrate, and an interposer. The interposer can include a plurality of contact elements located on a first surface thereof, each conductive element being coupled to a respective one of the plurality of contact members, and an antenna formed using a conductive layer of the interposer, the antenna being electrically coupled to the IC die through at least one of the plurality of contact elements and at least one of the plurality of contact members.
Abstract:
An integrated circuit (IC) package is disclosed that contains high density interconnects to connect multiple dies. The IC package includes an encapsulated layer, a first dielectric layer, and a second dielectric layer. The encapsulated layer forms the base of the IC package and includes the multiple dies. The first dielectric layer positioned between the encapsulated layer and the second layer. The first dielectric layer includes vias to connect to the input/ouput pads of active surfaces of the multiple dies. The second dielectric layer includes interconnect layers where at least one of the interconnect layers forms an electrical path to connect at least two of the multiple dies together. According to embodiments of the present disclosure, the IC package enables a high manufacturing yield due to large tolerances allowed for selection of dies. Embodiments of the present disclosure also increase an amount of input/output interconnection between multiple dies in the IC package. Embodiments of the present disclosure further enable lower manufacturing costs because of the use of mature reconstituted dies and redistribution layer technologies and the lack of a need for an interposer to connect multiple dies.
Abstract:
Semiconductor devices and manufacturing methods are provided for using a Recon interposer that provides a high density interface between the active semiconductor die and the semiconductor substrate and also provides the pitch fan-out. For example, a circuit assembly includes a silicon pad layer including a plurality of metal pads, each metal pad configured to receive a corresponding bump of a plurality of bumps. The circuit assembly further includes an oxide layer disposed on the silicon pad layer and an interposer dielectric layer disposed on the oxide layer. The interposer dielectric layer includes a plurality of routing traces that connect a top surface of the redistribution layer to a bottom surface of the interposer dielectric layer. The circuit assembly further includes an integrated circuit (IC) die attached to the plurality of routing traces at the top surface of the interposer dielectric layer using a plurality of IC bumps and an encapsulating material encapsulating at least a portion of the silicon pad layer, the oxide layer, the interposer dielectric layer, and the IC die to provide structural support for the circuit assembly.
Abstract:
An apparatus and methods are provided that more accurately detect the onset of thermal runaway in a device and timely control it. According to one embodiment, changes in stand-by current and temperature of a transistor device are measured and are used to be compared to some thresholds to trigger the device to respond before the onset thermal runaway. According to another embodiment, stand-by current is measured and is compared to some thresholds to trigger the device to respond before the onset thermal runaway.
Abstract:
A method, system, and apparatus for improved IC device packaging is described. In an aspect, an (IC) device package includes an IC die having at one or more contact pads, each contact pad located at a corresponding hotspot on a surface of th28e IC die. The package also includes a thermally conductive interposer which is thermally coupled to the IC die at the contact pads. In another aspect, an underfill material fills a space between the IC die and the interposer. The interposer may also be electrically coupled to the IC die. In an aspect, the interposer and the IC die are coupled through thermal interconnects or “nodules.”
Abstract:
In an embodiment, a thermal interface material (TIM) is provided. The TIM includes first and a second layers of a first transition metal, and a third layer including a plurality of carbon nanotubes supported in a flexible polymer matrix and a second transition metal coupled to sidewalls of carbon nanotubes. The first and second metal layers are in contact with first and second ends of carbon nanotube. The TIM further includes fourth and fifth layers of an alloy material coupled to the first and second metal layers, respectively. The carbon nanotube based TIM including the layers with transition metal allow improved heat transfer from an integrated circuit die to a heat spreader.