公开(公告)号：US09209281B2

公开(公告)日：2015-12-08

申请号：US11789045

申请日：2007-04-23

申请人： Roland Rupp ,  Stefan Woehlert ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Stefan Woehlert ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L29/66 ,  H01L21/04 ,  H01L21/3213 ,  H01L21/268 ,  H01L29/16

CPC分类号： H01L29/47 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L21/32134 ,  H01L23/528 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66901 ,  H01L29/66909 ,  H01L29/808 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

摘要翻译： 一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包含蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层， 通过用蚀刻介质蚀刻以形成该器件。

公开(公告)号：US08450196B2

公开(公告)日：2013-05-28

申请号：US11924093

申请日：2007-10-25

申请人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L21/28

CPC分类号： H01L21/0495 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/2683 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872

摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

摘要翻译： 公开了一种包括SiC上电接触的集成电路的生产。 一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

公开(公告)号：US20080258183A1

公开(公告)日：2008-10-23

申请号：US11789045

申请日：2007-04-23

申请人： Roland Rupp ,  Stefan Woehlert ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Stefan Woehlert ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L29/80 ,  H01L27/095

CPC分类号： H01L29/47 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L21/32134 ,  H01L23/528 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66901 ,  H01L29/66909 ,  H01L29/808 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

摘要翻译： 一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包括蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层， 通过用蚀刻介质蚀刻以形成该器件。

公开(公告)号：US06905916B2

公开(公告)日：2005-06-14

申请号：US10146585

申请日：2002-05-15

申请人： Wolfgang Bartsch ,  Michael Treu ,  Roland Rupp

发明人： Wolfgang Bartsch ,  Michael Treu ,  Roland Rupp

IPC分类号： H01L29/872 ,  H01L21/04 ,  H01L21/20 ,  H01L21/3065 ,  H01L29/47 ,  H01L29/74

CPC分类号： H01L21/0495 ,  H01L21/048 ,  H01L21/0485

摘要： A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.

摘要翻译： 一种用于处理通过外延生产的SiC半导体主体上的表面的方法。 根据该方法，通过蚀刻去除在外延的最后相中沉积的部分上覆层，然后进行湿化学处理以除去表面上的薄的天然氧化物。 或者，也可以在去除处理之后立即将表面构造为肖特基接触和/或欧姆接触的金属层施加于表面。

公开(公告)号：US20080099769A1

公开(公告)日：2008-05-01

申请号：US11924093

申请日：2007-10-25

申请人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

发明人： Roland Rupp ,  Thomas Gutt ,  Michael Treu

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L21/0495 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0485 ,  H01L21/268 ,  H01L21/2683 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/872

摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

摘要翻译： 公开了一种包括SiC上电接触的集成电路的生产。 一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

公开(公告)号：US20130161801A1

公开(公告)日：2013-06-27

申请号：US13336248

申请日：2011-12-23

申请人： Ralf Otremba ,  Roland Rupp ,  Daniel Domes

发明人： Ralf Otremba ,  Roland Rupp ,  Daniel Domes

IPC分类号： H01L23/495 ,  H05K7/04 ,  H01L21/56

CPC分类号： H01L23/48 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3735 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/3716 ,  H01L2224/37639 ,  H01L2224/37647 ,  H01L2224/37655 ,  H01L2224/3766 ,  H01L2224/4005 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40227 ,  H01L2224/40247 ,  H01L2224/4103 ,  H01L2224/41051 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/4847 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/8482 ,  H01L2224/8485 ,  H01L2224/85447 ,  H01L2224/92247 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01015 ,  H01L2924/20759

摘要： A module includes a DCB substrate and a discrete device mounted on the DCB substrate, wherein the discrete device comprises a leadframe, a semiconductor chip mounted on the leadframe and an encapsulation material covering the semiconductor chip.

摘要翻译： 模块包括DCB衬底和安装在DCB衬底上的分立器件，其中分立器件包括引线框，安装在引线框上的半导体芯片和覆盖半导体芯片的封装材料。

公开(公告)号：US07656629B2

公开(公告)日：2010-02-02

申请号：US11581039

申请日：2006-10-13

申请人： Jürgen Pullmann ,  Roland Rupp

发明人： Jürgen Pullmann ,  Roland Rupp

IPC分类号： H02H7/00

CPC分类号： H01H47/002 ,  H01H47/004 ,  H03K17/965

摘要： A safety switch for safety circuit arrangement has a control part for processing an input signal and at least one switching element with at least one active and one inactive switching state. The control part controls the switching element in order to generate an output signal dependent on the input signal at an output. In addition, the safety switch has a diagnostic function for identifying a functional fault. The control part is configured to transfer the switching element into the inactive state when a functional fault is identified. According to one aspect of the invention, the control part is also configured to generate a data message at the output, which data message is dependent on the functional fault.

摘要翻译： 用于安全电路装置的安全开关具有用于处理输入信号的控制部分和具有至少一个有效和无效切换状态的至少一个开关元件。 控制部分控制开关元件，以便根据输出端的输入信号产生输出信号。 另外，安全开关具有识别功能故障的诊断功能。 控制部分被配置为当识别功能故障时将开关元件传送到非活动状态。 根据本发明的一个方面，控制部分还被配置为在输出端生成数据消息，该数据消息取决于功能故障。

公开(公告)号：US20070204662A1

公开(公告)日：2007-09-06

申请号：US11604507

申请日：2006-11-27

申请人： Jurgen Pullmann ,  Roland Rupp ,  Andreas Veit ,  Peter Eichinger

发明人： Jurgen Pullmann ,  Roland Rupp ,  Andreas Veit ,  Peter Eichinger

IPC分类号： E05B47/00 ,  H01H9/00

CPC分类号： F16P3/10 ,  E05B15/101 ,  E05B15/102 ,  E05B17/10 ,  E05B41/00 ,  E05B47/0046 ,  E05B63/04 ,  E05B2047/0069 ,  E05B2047/0086 ,  Y10S292/31 ,  Y10T70/5761 ,  Y10T70/7062 ,  Y10T70/7102 ,  Y10T70/7107 ,  Y10T70/713 ,  Y10T70/8027 ,  Y10T292/0999 ,  Y10T292/1003 ,  Y10T292/1021 ,  Y10T292/1031 ,  Y10T292/18 ,  Y10T292/558 ,  Y10T292/57

摘要： There is disclosed a safety switch for generating an enable signal as a function of the position of a moveable guard door. The safety switch comprises a door part and a frame part. The door part has an activator, which can be displaced between a first and a second position. The frame part has a cutout, in which the activator can engage in the second position. A locking element is arranged on the door part in order to lock the activator in the second position. A sensor is designed to detect at least one of the positions of the activator in order to generate the enable signal as a function thereof.

摘要翻译： 公开了一种用于根据可移动防护门的位置产生使能信号的安全开关。 安全开关包括门部和框架部。 门部具有一个可在第一和第二位置之间移动的活化器。 框架部分具有切口，其中活化器可以啮合在第二位置。 锁定元件设置在门部上，以将活化器锁定在第二位置。 传感器被设计成检测激活器的至少一个位置，以便产生作为其功能的使能信号。

公开(公告)号：US20070108513A1

公开(公告)日：2007-05-17

申请号：US11540922

申请日：2006-09-29

申请人： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

发明人： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

IPC分类号： H01L31/00

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7849

摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

摘要翻译： 公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。 在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有 半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷 的半导体材料，并且牺牲层被电介质代替。

公开(公告)号：US06995467B2

公开(公告)日：2006-02-07

申请号：US10291062

申请日：2002-11-08

申请人： Michael Herfurth ,  Roland Rupp ,  Ilia Zverev

发明人： Michael Herfurth ,  Roland Rupp ,  Ilia Zverev

IPC分类号： H01L23/34

CPC分类号： H01L23/13 ,  H01L25/18 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00

摘要： A semiconductor component contains two semiconductor bodies, which are spatially separated from one another and electrically interconnected. A compensation MOS field effect transistor is provided as the first semiconductor body, and a silicon carbide Schottky diode is provided as the second semiconductor body. Consequently, the semiconductor component can advantageously be produced significantly more compactly and more cost-effectively, since both the compensation MOS field-effect transistor and the silicon carbide Schottky diode contribute to a significant reduction of power loss.