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公开(公告)号：US20160365335A1
公开(公告)日：2016-12-15
申请号：US15247259
申请日：2016-08-25
申请人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
发明人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
IPC分类号： H01L25/065 , H01L23/00
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0233 , H01L2224/02331 , H01L2224/0401 , H01L2224/05022 , H01L2224/05095 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/17181 , H01L2225/06548 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
摘要翻译： 公开了一种具有导电孔的半导体芯片及其制造方法。 该方法包括在第一半导体芯片的层中形成第一多个导电通孔。 第一多个导电通孔包括第一端和第二端。 第一导体焊盘与第一多个导电通孔的第一端欧姆接触形成。
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公开(公告)号：US09385055B2
公开(公告)日：2016-07-05
申请号：US12860156
申请日：2010-08-20
IPC分类号： H01L23/48 , H01L23/04 , H01L23/367 , H01L23/42 , H01L25/065 , H01L21/56 , H01L23/10 , H01L23/498
CPC分类号： H01L23/04 , H01L21/563 , H01L23/10 , H01L23/367 , H01L23/42 , H01L23/49827 , H01L25/0652 , H01L25/0657 , H01L2224/16225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2225/06575 , H01L2225/06589 , H01L2924/10253 , H01L2924/15311 , H01L2924/00
摘要： A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.
摘要翻译： 提供一种组装半导体芯片器件的方法，其包括将插入件放置在第一半导体芯片上。 插入器包括安置在第一半导体芯片上的第一表面和适于热接触散热器的第二表面。 第二表面包括第一孔。 第二半导体芯片放置在第一孔中。
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公开(公告)号：US08866276B2
公开(公告)日：2014-10-21
申请号：US14132557
申请日：2013-12-18
申请人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号： H01L21/00 , H01L21/56 , H01L23/498 , H01L25/065 , H01L23/367 , H01L23/31 , H01L23/29 , H01L23/24 , H01L23/00 , H01L23/495 , H01L23/14
CPC分类号： H01L23/24 , H01L21/563 , H01L23/147 , H01L23/293 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L23/3675 , H01L23/49575 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L24/16 , H01L25/0657 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/16251 , H01L2924/166 , H01L2924/167 , H01L2924/00
摘要： A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
摘要翻译： 提供一种制造方法，其包括为半导体芯片提供绝缘层。 绝缘层包括沟槽。 第二半导体芯片堆叠在第一半导体芯片上以留下间隙。 将聚合物填料放置在间隙中，其中一部分聚合物填料被拉入沟槽。
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公开(公告)号：US20120205791A1
公开(公告)日：2012-08-16
申请号：US13456968
申请日：2012-04-26
申请人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
CPC分类号： H01L23/585 , H01L21/76898 , H01L23/3171 , H01L23/481 , H01L23/49816 , H01L23/60 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/16225 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/351 , H01L2224/81 , H01L2924/00
摘要： A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.
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公开(公告)号：US20120075807A1
公开(公告)日：2012-03-29
申请号：US12889590
申请日：2010-09-24
申请人： Gamal Refai-Ahmed , Bryan Black , Michael Z. Su
发明人： Gamal Refai-Ahmed , Bryan Black , Michael Z. Su
CPC分类号： H01L25/0657 , H01L23/13 , H01L23/42 , H01L23/49816 , H01L23/49827 , H01L25/0652 , H01L2023/4062 , H01L2224/1403 , H01L2224/141 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32245 , H01L2224/73253 , H01L2224/81192 , H01L2224/83192 , H01L2224/92225 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2225/06589 , H01L2924/01322 , H01L2924/15151 , H01L2924/15311 , H01L2924/15321 , H05K1/0204 , H05K1/141 , H05K1/181 , H05K2201/09072 , H05K2201/10378 , H05K2201/10416 , H05K2201/10515 , H05K2201/1056
摘要： A method of manufacturing is provided that includes placing a thermal management device in thermal contact with a first semiconductor chip of a semiconductor chip device. The semiconductor chip device includes a first substrate coupled to the first semiconductor chip. The first substrate has a first aperture. At least one of the first semiconductor chip and the thermal management device is at least partially positioned in the first aperture.
摘要翻译： 提供了一种制造方法，其包括将热管理装置放置成与半导体芯片装置的第一半导体芯片热接触。 半导体芯片器件包括耦合到第一半导体芯片的第一衬底。 第一基板具有第一孔。 第一半导体芯片和热管理装置中的至少一个至少部分地位于第一孔中。
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公开(公告)号：US20120061821A1
公开(公告)日：2012-03-15
申请号：US12878542
申请日：2010-09-09
申请人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
发明人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
IPC分类号： H01L23/498 , H01L23/48 , H01L21/768
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0233 , H01L2224/02331 , H01L2224/0401 , H01L2224/05022 , H01L2224/05095 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/17181 , H01L2225/06548 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
摘要翻译： 公开了一种具有导电孔的半导体芯片及其制造方法。 该方法包括在第一半导体芯片的层中形成第一多个导电通孔。 第一多个导电通孔包括第一端和第二端。 第一导体焊盘与第一多个导电通孔的第一端欧姆接触形成。
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公开(公告)号：US09437561B2
公开(公告)日：2016-09-06
申请号：US12878542
申请日：2010-09-09
申请人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
发明人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
IPC分类号： H01L21/4763 , H01L23/00 , H01L23/48
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0233 , H01L2224/02331 , H01L2224/0401 , H01L2224/05022 , H01L2224/05095 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/17181 , H01L2225/06548 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
摘要翻译： 公开了一种具有导电孔的半导体芯片及其制造方法。 该方法包括在第一半导体芯片的层中形成第一多个导电通孔。 第一多个导电通孔包括第一端和第二端。 第一导体焊盘与第一多个导电通孔的第一端欧姆接触形成。
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公开(公告)号：US08691626B2
公开(公告)日：2014-04-08
申请号：US12878812
申请日：2010-09-09
申请人： Michael Z. Su , Lei Fu , Gamal Refai-Ahmed , Bryan Black
发明人： Michael Z. Su , Lei Fu , Gamal Refai-Ahmed , Bryan Black
CPC分类号： H01L21/563 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0655 , H01L25/50 , H01L2224/13025 , H01L2224/16146 , H01L2224/16235 , H01L2224/17181 , H01L2224/26145 , H01L2224/26175 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/81815 , H01L2224/92125 , H01L2224/94 , H01L2924/10252 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1431 , H01L2924/1433 , H01L2924/1434 , H01L2924/15159 , H01L2924/15311 , H01L2224/16225 , H01L2924/00 , H01L2224/81
摘要： A method of manufacturing is provided that includes placing a removable cover on a surface of a substrate. The substrate includes a first semiconductor chip positioned on the surface. The first semiconductor chip includes a first sidewall. The removable cover includes a second sidewall positioned opposite the first sidewall. A first underfill is placed between the first semiconductor chip and the surface wherein the second sidewall provides a barrier to flow of the first underfill. Various apparatus are also disclosed.
摘要翻译： 提供了一种制造方法，其包括将可移除的盖放置在基板的表面上。 衬底包括位于表面上的第一半导体芯片。 第一半导体芯片包括第一侧壁。 可拆卸盖包括与第一侧壁相对定位的第二侧壁。 第一底部填充物放置在第一半导体芯片和表面之间，其中第二侧壁为第一底部填充物的流动提供阻挡。 还公开了各种装置。
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公开(公告)号：US08574965B2
公开(公告)日：2013-11-05
申请号：US12910379
申请日：2010-10-22
申请人： Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
发明人： Gamal Refai-Ahmed , Michael Z. Su , Bryan Black
IPC分类号： H01L21/00
CPC分类号： H01L23/22 , H01L21/54 , H01L23/42 , H01L23/473 , H01L25/115 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/00
摘要： A method of manufacturing is provided that includes providing a semiconductor chip device that has a circuit board and a first semiconductor chip coupled thereto. A lid is placed on the circuit board. The lid includes an opening and an internal cavity. A liquid thermal interface material is placed in the internal cavity for thermal contact with the first semiconductor chip and the circuit board.
摘要翻译： 提供了一种制造方法，其包括提供具有电路板和与其耦合的第一半导体芯片的半导体芯片器件。 盖子放在电路板上。 盖子包括开口和内部空腔。 液体热界面材料放置在内腔中，用于与第一半导体芯片和电路板热接触。
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公开(公告)号：US20130161814A1
公开(公告)日：2013-06-27
申请号：US13773844
申请日：2013-02-22
申请人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
发明人： Michael Z. Su , Gamal Refai-Ahmed , Bryan Black
IPC分类号： H01L23/498
CPC分类号： H01L23/49827 , H01L23/49816 , H01L23/49894 , H01L24/11 , H01L24/14 , H01L24/17 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/1132 , H01L2224/1146 , H01L2224/1147 , H01L2224/13082 , H01L2224/13099 , H01L2224/1403 , H01L2224/1414 , H01L2224/14143 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2225/06513 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor chip device includes a first semiconductor chip adapted to be stacked with a second semiconductor chip wherein the second semiconductor chip includes a side and first and second conductor structures projecting from the side. The first semiconductor chip includes a first edge, a first conductor pad, a first conductor pillar positioned on but laterally offset from the first conductor pad toward the first edge and that has a first lateral dimension and is adapted to couple to one of the first and second conductor structures, a second conductor pad positioned nearer the first edge than the first conductor pad, and a second conductor pillar positioned on but laterally offset from the second conductor pad and that has a second lateral dimension larger than the first lateral dimension and is adapted to couple to the other of the first and second conductor structures.
摘要翻译： 一种半导体芯片器件包括适于与第二半导体芯片堆叠的第一半导体芯片，其中第二半导体芯片包括侧面以及从侧面突出的第一和第二导体结构。 第一半导体芯片包括第一边缘，第一导体焊盘，第一导体柱，其位于第一导体焊盘朝向第一边缘但横向偏移并且具有第一横向尺寸并且适于耦合到第一和第 第二导体结构，位于比第一导体焊盘更靠近第一边缘的第二导体焊盘，以及定位在第二导体焊盘但是横向偏离第二导体焊盘并且具有大于第一横向尺寸的第二横向尺寸的第二导体柱，并且适于 耦合到第一和第二导体结构中的另一个。
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