公开(公告)号：US20170243913A1

公开(公告)日：2017-08-24

申请号：US15244073

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jinseong HEO ,  Seongjun PARK

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/032

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14689 ,  H01L31/032 ,  H01L31/035227 ,  H01L31/109

Abstract: An image sensor may include visible light detectors and a near-infrared light detector. The near-infrared light detector may contain a material highly sensitive to near-infrared rays, and thus the size of the near-infrared light detector may be reduced.

公开(公告)号：US20170229546A1

公开(公告)日：2017-08-10

申请号：US15494035

申请日：2017-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun JEONG ,  Seongjun PARK ,  Yunseong LEE

IPC: H01L29/16 ,  H01L29/786 ,  H01L21/04 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L27/088

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02527 ,  H01L21/02603 ,  H01L21/042 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/467 ,  H01L21/823412 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66037 ,  H01L29/66045 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78696 ,  H01L51/0045 ,  Y10S977/755 ,  Y10S977/888

Abstract: Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

公开(公告)号：US20160343805A1

公开(公告)日：2016-11-24

申请号：US15010807

申请日：2016-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Haeryong KIM ,  Hyeonjin SHIN ,  Seunggeol NAM ,  Seongjun PARK

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/04 ,  H01L29/165 ,  H01L29/78 ,  H01L29/267

CPC classification number: H01L29/0847 ,  H01L21/28512 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

Abstract translation: 半导体器件包括半导体层，与半导体层电接触的金属层和半导体层与金属层之间的二维材料层并具有二维晶体结构。

公开(公告)号：US20150122315A1

公开(公告)日：2015-05-07

申请号：US14508378

申请日：2014-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Seongjun PARK ,  Jaeho LEE ,  Jinseong HEO

IPC: H01L29/06 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  H01L29/737 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861 ,  H01L29/74 ,  H01L29/792 ,  C01B19/04 ,  C01G41/00 ,  C01G39/06 ,  C01G25/00 ,  C01G27/00 ,  H01L29/24

CPC classification number: H01L29/0665 ,  C01B19/04 ,  C01G25/00 ,  C01G27/00 ,  C01G39/06 ,  C01G41/00 ,  C01P2004/20 ,  C01P2006/40 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/22 ,  H01L29/221 ,  H01L29/24 ,  H01L29/66977 ,  H01L29/73 ,  H01L29/7317 ,  H01L29/737 ,  H01L29/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/792 ,  H01L29/861 ,  H01L29/8611 ,  H01L31/032 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/035281 ,  H01L31/109 ,  Y10T428/24802

Abstract: According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

Abstract translation: 根据示例实施例，二维（2D）材料元件可以包括彼此化学键合的第一2D材料和第二2D材料。 第一2D材料可以包括基于硫族化物的第一金属材料。 第二2D材料可以包括第二金属硫族化物基材料。 第二2D材料可以结合到第一2D材料的一侧。 2D材料元件可以具有PN结结构。 2D材料元件可以包括具有不同带隙的多个2D材料。

公开(公告)号：US20210074815A1

公开(公告)日：2021-03-11

申请号：US17087968

申请日：2020-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin SHIN ,  Yeonchoo CHO ,  Seunggeol NAM ,  Seongjun PARK ,  Yunseong LEE

IPC: H01L29/16 ,  H01L21/02 ,  C01B32/186

Abstract: Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.

公开(公告)号：US20210020835A1

公开(公告)日：2021-01-21

申请号：US17060884

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun LEE ,  Seongjun PARK ,  Hyunjae SONG ,  Hyeonjin SHIN ,  Kibum KIM ,  Sanghun LEE ,  Yunho KANG

IPC: H01L45/00 ,  H01L21/768 ,  G11C13/00

Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.

公开(公告)号：US20200058741A1

公开(公告)日：2020-02-20

申请号：US16662872

申请日：2019-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L29/12 ,  H01L27/15 ,  H01L27/146 ,  H01L27/144 ,  H01L31/0352 ,  H01L51/00 ,  H01L51/05 ,  H01L31/101 ,  H01L31/028 ,  H01L31/09

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20180145190A1

公开(公告)日：2018-05-24

申请号：US15603796

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung LEE ,  Jinseong HEO ,  Jaeho LEE ,  Haeryong KIM ,  Seongjun PARK ,  Hyeonjin SHIN ,  Eunkyu LEE ,  Sanghyun JO

IPC: H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  G01N21/59

CPC classification number: H01L31/02161 ,  G01N21/59 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/035218 ,  H01L31/1804 ,  Y02E10/544 ,  Y02E10/547

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US20180061734A1

公开(公告)日：2018-03-01

申请号：US15497683

申请日：2017-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook LEE ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun JEONG ,  Seunggeol NAM ,  Seongjun PARK ,  Hyeonjin SHIN

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/31

CPC classification number: H01L23/3733 ,  B82Y30/00 ,  C08K3/042 ,  H01L21/4871 ,  H01L23/3171 ,  H01L23/373 ,  H01L23/3737 ,  H01L23/3738 ,  H01L23/42

Abstract: Disclosed are heat dissipation structures using nano-sized graphene fragments such as graphene quantum dots (GQDs) and/or methods of manufacturing the heat dissipation structures. A heat dissipation structure includes a heating element, and a heat dissipation film on the heating element to dissipate heat generated from the heating element, to outside. The heat dissipation film may include GQDs.

公开(公告)号：US20170338260A1

公开(公告)日：2017-11-23

申请号：US15668997

申请日：2017-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Seongjun PARK ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jaeho LEE

IPC: H01L27/146 ,  H01L31/0224 ,  H01L29/786 ,  H01L31/10 ,  H01L27/144

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.