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    SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
    16.
    发明申请
    SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210098391A1

    公开(公告)日：2021-04-01

    申请号：US16893440

    申请日：2020-06-05

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wei-Cheng Wu ,  Chien-Chia Chiu ,  Cheng-Hsien Hsieh ,  Li-Han Hsu ,  Meng-Tsan Lee ,  Tsung-Shu Lin

    IPC: H01L23/552 ,  H01L23/00 ,  H01L23/488 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768

    Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

    Semiconductor package and manufacturing method thereof
    17.
    发明授权
    Semiconductor package and manufacturing method thereof 有权

    公开(公告)号：US10756038B1

    公开(公告)日：2020-08-25

    申请号：US16281092

    申请日：2019-02-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ming-Yen Chiu ,  Shou-Yi Wang ,  Tsung-Shu Lin

    IPC: H01L23/00 ,  H01L23/522 ,  H01L23/31 ,  H01L21/56

    Abstract: A semiconductor package includes a semiconductor die and a connection structure. The semiconductor die is laterally encapsulated by an insulating encapsulant. The connection structure is disposed on the semiconductor die, the connection structure is electrically connected to the semiconductor die, and the connection structure includes at least one first via, first pad structures, second vias, a second pad structure and a conductive terminal. The at least one first via is disposed over and electrically connected to the semiconductor die. The first pad structures are disposed over the at least one first via, wherein the at least one first via contacts at least one of the first pad structures. The second vias are disposed over the first pad structures, wherein the second vias contact the first pad structures. The second pad structure is disposed over and contacts the second vias, wherein a vertical projection of each of first pad structures overlaps with a vertical projection of the second pad structure, and an overall area of the vertical projections of the first pad structures is smaller than an area of the vertical projection of the second pad structure. The conductive terminal is disposed over and connects with the second pad structure.

    SEAL RING STRUCTURE AND METHOD OF FORMING SAME
    19.
    发明申请
    SEAL RING STRUCTURE AND METHOD OF FORMING SAME 有权

    公开(公告)号：US20250022825A1

    公开(公告)日：2025-01-16

    申请号：US18510523

    申请日：2023-11-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Sheng-Han Tsai ,  Tsung-Yu Chen ,  Hong-Yu Guo ,  Tsung-Shu Lin ,  Hsin-Yu Pan

    IPC: H01L23/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/58

    Abstract: In an embodiment, a method includes: forming active devices over a semiconductor substrate; forming an interconnect structure over the active devices, the interconnect structure comprising a first portion of a seal ring over the semiconductor substrate, the seal ring being electrically insulated from the active devices; forming a first passivation layer over the interconnect structure; forming a first metal pad and a second metal pad extending through the first passivation layer and over the interconnect structure, the first metal pad having a bowl shape, the second metal pad having a step shape; and depositing a second passivation layer over the first metal pad and the second metal pad.

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