公开(公告)号：US20100032302A1

公开(公告)日：2010-02-11

申请号：US12210781

申请日：2008-09-15

Applicant: THERESA HOLTERMANN ,  Anthony Graupera ,  Michael DiBattista

Inventor： THERESA HOLTERMANN ,  Anthony Graupera ,  Michael DiBattista

IPC: C25D5/02

CPC classification number: H01J37/3056 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31744 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/2885 ,  H01L21/76898 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning.

Abstract translation: 通过产生或暴露具有增加的导电性的图案化区域，然后使用电沉积在该区域上形成导体来产生微观金属结构。 在一些实施例中，在衬底上形成微观金属结构，然后蚀刻衬底以从衬底去除结构。 在一些实施例中，没有沉积前体气体的聚焦聚焦的镓离子束扫描硅衬底上的图案，以产生导电图案，然后通过电化学沉积一种或多种金属形成铜结构。 该结构可以通过蚀刻从衬底中脱离，或者可以在适当的位置使用。 可以使用光束来访问晶体管的有源层，然后可以将导体电沉积以提供用于在其工作时感测或修改晶体管操作的引线。

公开(公告)号：US07659526B2

公开(公告)日：2010-02-09

申请号：US11841565

申请日：2007-08-20

Applicant: Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

Inventor： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC: H01J37/141

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract translation: 用于将工件暴露于带电粒子的室包括用于产生带电粒子流的带电粒子源，准直器，被配置为沿着轴准直和引导带电粒子流从带电粒子源流出，准直器下游的光束数字化器 被配置为通过调整沿着轴的带电粒子之间的纵向间隔来创建包括至少一个带电粒子的组的数字光束，所述光束数字转换器的下游的偏转器包括沿轴线纵向设置以偏转数字光束的一系列偏转级， 以及构造成保持工件的偏转器下游的工件台。

公开(公告)号：US07267731B2

公开(公告)日：2007-09-11

申请号：US10712147

申请日：2003-11-13

Applicant: Kouji Iwasaki

Inventor： Kouji Iwasaki

IPC: C21D1/54

CPC classification number: C23C16/047 ,  B33Y50/02 ,  H01J37/3023 ,  H01J2237/30411 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: A method of fabricating a three-dimensional microstructure provides data corresponding to information relating to the structure of a three-dimensional microstructure design. A sample is processed in accordance with the provided data by irradiating the sample with a charged-particle beam while controlling processing conditions of the charged-particle beam. Dimensions of the processed sample are compared with the provided data to identify differences between the structure of the processed sample and the structure of the three-dimensional microstructure design. The sample is then irradiated again with a charged-particle beam to correct the identified structural differences while adjusting the processing conditions of the charged-particle beam to thereby fabricate a three-dimensional microstructure having a structure substantially the same as the structure of the three-dimensional microstructure design.

Abstract translation: 制造三维微结构的方法提供对应于与三维微结构设计的结构有关的信息的数据。 在控制带电粒子束的处理条件的同时，通过用带电粒子束照射样品，根据提供的数据处理样品。 将处理过的样品的尺寸与提供的数据进行比较，以识别经处理样品的结构与三维微结构设计的结构之间的差异。 然后再次用带电粒子束照射样品以校正所识别的结构差异，同时调节带电粒子束的处理条件，从而制造具有与三维结构基本相同的结构的三维微结构， 尺寸微结构设计。

公开(公告)号：US20070045534A1

公开(公告)日：2007-03-01

申请号：US11484015

申请日：2006-07-10

Applicant: Michael Zani ,  Mark Bennahmias ,  Mark Mayse ,  Jeffrey Scott

Inventor： Michael Zani ,  Mark Bennahmias ,  Mark Mayse ,  Jeffrey Scott

IPC: G21K7/00

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract translation: 用于将工件暴露于带电粒子的室包括用于产生带电粒子流的带电粒子源，准直器，被配置为沿着轴准直和引导带电粒子流从带电粒子源流出，准直器下游的光束数字化器 被配置为通过调整沿着轴的带电粒子之间的纵向间隔来创建包括至少一个带电粒子的组的数字光束，所述光束数字转换器的下游的偏转器包括沿轴线纵向设置以偏转数字光束的一系列偏转级， 以及构造成保持工件的偏转器下游的工件台。

公开(公告)号：US20060144821A1

公开(公告)日：2006-07-06

申请号：US11029191

申请日：2005-01-04

Applicant: Yuh-Lin Wang

Inventor： Yuh-Lin Wang

IPC: C23F1/00

CPC classification number: A44C17/005 ,  A44C27/00 ,  H01J2237/31737

Abstract: The present invention provides a method for engraving desired irreproducible patterns on the surface of gemstones including diamond by the use of an energetic ion beam. The pattern has a characteristic topological texture, which is irreproducible even using the same ion beam to engrave onto the same location of the same diamond.

Abstract translation: 本发明提供了一种通过使用能量离子束在包括金刚石的宝石表面上雕刻期望的不可再现图案的方法。 该图案具有特征拓扑结构，即使使用相同的离子束雕刻到相同钻石的相同位置上也是不可再现的。

公开(公告)号：US20050077486A1

公开(公告)日：2005-04-14

申请号：US10683488

申请日：2003-10-09

Applicant: Thomas Schenkel ,  Ivo Rangelow ,  Jan Meijer

Inventor： Thomas Schenkel ,  Ivo Rangelow ,  Jan Meijer

IPC: H01J37/304

CPC classification number: H01J37/3172 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/30488 ,  H01J2237/3171 ,  H01J2237/31737

Abstract: A device and a method for positionally accurate implantation of individual particles in a substrate surface (1a) are described. A diaphragm for a particle beam to be directed onto the substrate surface (1a) and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface (1a) are provided on a tip (4) which is formed on a free end portion of a flexible arm (2) to be mounted on one side. The device is part of a scanning device operating according to the AFM method (FIG. 1).

Abstract translation: 描述了用于将单个颗粒位置精确地植入到衬底表面（1a）中的装置和方法。 用于将粒子束引导到衬底表面（1a）上的隔膜和以pn结形式设置在其上的检测器，用于确定在将颗粒撞击到衬底表面（1a）上时产生的二次电子流。 尖端（4），其形成在一侧安装的柔性臂（2）的自由端部上。 该装置是根据AFM方法（图1）操作的扫描装置的一部分。

公开(公告)号：US20030015671A1

公开(公告)日：2003-01-23

申请号：US09908925

申请日：2001-07-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David E. Lackey ,  Theodore M. Levin ,  Leah M. Pastel

IPC: G21G005/00 ,  A61N005/00

CPC classification number: H01J37/3056 ,  H01J2237/304 ,  H01J2237/31737 ,  H01J2237/31742

Abstract: An apparatus for assisting backside focused ion beam (FIB) device modification is disclosed. The apparatus for assisting backside FIB device modification includes an FIB device modification circuit and a control circuit. The FIB device modification circuit includes an input, an output, an FIB input pad, and an FIB output pad. The FIB device modification circuit allows the input to be electrically connected to the output. The control circuit, which is coupled to the FIB device modification circuit, may include a jumper and a cut. The control circuit is preferably located in a proximity of a backside of a substrate to allow the jumper and the cut to be modified by an FIB machine.

公开(公告)号：US5149973A

公开(公告)日：1992-09-22

申请号：US723094

申请日：1991-06-28

Applicant: Hiroaki Morimoto

Inventor： Hiroaki Morimoto

IPC: H01L21/3205 ,  B23K15/00 ,  B23K15/02 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/3178 ,  B23K15/0013 ,  B23K15/004 ,  B23K15/02 ,  H01J37/3056 ,  H01J2237/31737

Abstract: Disclosed are an apparatus for wiring a semiconductor device and a wiring method therefor which allow a manufacturing step to be simplified without deteriorating an insulation characteristic of an aerial wiring. The semiconductor device wiring apparatus includes a first beam column 1a disposed above a substrate 50 and a second beam column 1b disposed horizontally thereto. Therefore, a wiring portion of the aerial wiring to be formed upwardly is formed by using the first beam column 1a and a wiring portion to be formed horizontally to wiring layer of the substrate 50 is formed by using the second beam column, which results in that no insulating film for the aerial wiring is required to simplify manufacturing steps.

Abstract translation: 公开了一种用于布线半导体器件的设备及其布线方法，其允许简化制造步骤，而不会降低空中布线的绝缘特性。 半导体器件布线装置包括设置在基板50上方的第一梁柱1a和水平设置的第二梁柱1b。 因此，通过使用第一梁柱1a形成向上形成的架空布线的布线部分，并且通过使用第二梁柱形成水平地形成在基板50的布线层上的布线部分，结果是 不需要用于空中布线的绝缘膜来简化制造步骤。

公开(公告)号：US10020200B1

公开(公告)日：2018-07-10

申请号：US14966165

申请日：2015-12-11

Applicant: Multibeam Corporation

Inventor： Kevin M. Monahan ,  Theodore A. Prescop ,  Michael C. Smayling ,  David K. Lam

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/308 ,  H01L21/66

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

公开(公告)号：US20120273458A1

公开(公告)日：2012-11-01

申请号：US13103281

申请日：2011-05-09

Applicant: Tristan Bret ,  Petra Spies ,  Thorsten Hofmann

Inventor： Tristan Bret ,  Petra Spies ,  Thorsten Hofmann

IPC: C23F1/00 ,  B08B7/00 ,  B05C11/00 ,  C23F1/08 ,  C23C16/48 ,  C23C16/52

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/74 ,  H01J37/3056 ,  H01J2237/31737 ,  H01J2237/31744

Abstract: The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

Abstract translation: 本发明涉及一种用于处理在衬底上发生聚焦的粒子束的衬底的方法，所述方法包括以下步骤：（a）使用聚焦粒子束在衬底上产生至少一个参考标记，并且至少一个处理 气体，（b）确定所述至少一个参考标记的参考位置，（c）使用所述参考标记的参考位置处理所述衬底，以及（d）从所述衬底去除所述至少一个参考标记。