公开(公告)号：US20180082821A1

公开(公告)日：2018-03-22

申请号：US15445027

申请日：2017-02-28

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Norihiko IKEDA ,  Naoki YASUI

IPC分类号： H01J37/32

CPC分类号： H01J37/32146 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32669 ,  H01J2237/3341

摘要： A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a control unit. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The control unit controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.

公开(公告)号：US20170365444A1

公开(公告)日：2017-12-21

申请号：US15415403

申请日：2017-01-25

申请人： Samsung Electronics Co., Ltd.

发明人： Hak Young Kim ,  Jung Pyo Hong ,  Jong Woo Sun ,  Doug Yong Sung ,  Yong Ho Lim ,  Yun Kwang Jeon ,  Hwa Jun Jung

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32458 ,  H01J2237/334 ,  H01L21/67069

摘要： A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

公开(公告)号：US20170062245A1

公开(公告)日：2017-03-02

申请号：US15142629

申请日：2016-04-29

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Pyo Hong ,  Kwang-Nam KIM ,  Sang-Dong KWON ,  Jong-Woo SUN ,  Sang-Rok OH ,  Yong-Moon JANG

IPC分类号： H01L21/67 ,  H01J37/32

CPC分类号： H01J37/32715 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32119 ,  H01L21/67248

摘要： Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.

摘要翻译： 提供了包括温度测量单元的衬底处理设备。 基板处理装置包括：室，包括基板处理区域，设置在基板处理区域上并且包括插入孔的电介质片和设置在电介质片上以测量电介质片材的温度的温度测量单元， 并且具有插入到所述插入孔中的螺纹部分，其中所述插入孔和所述螺纹部分中的每一个具有彼此啮合的螺纹螺旋。

公开(公告)号：US20170032931A1

公开(公告)日：2017-02-02

申请号：US15291468

申请日：2016-10-12

申请人： LAM RESEARCH CORPORATION

发明人： Tom KAMP ,  Arthur H. SATO ,  Alex PATERSON

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

摘要： A gas plenum arrangement for a substrate processing system includes a gas plenum body arranged to define a gas plenum between a coil and a processing chamber. The coil is arranged outside of an outer edge of the gas plenum body. A plurality of flux attenuating portions is arranged outside of the outer edge of the gas plenum body. The flux attenuation portions overlap the coil.

摘要翻译： 用于衬底处理系统的气体增压室装置包括设置成在线圈和处理室之间限定气体增压室的气体增压室。 线圈布置在气室的外边缘的外侧。 多个通量衰减部分设置在气体增压室的外边缘的外侧。 磁通衰减部分与线圈重叠。

公开(公告)号：US20170009338A1

公开(公告)日：2017-01-12

申请号：US15117804

申请日：2015-02-23

申请人： TOKYO ELECTRON LIMITED

发明人： Takehisa SAITO ,  Takenao NEMOTO ,  Koji YAMAGISHI ,  Hiroshi KANEKO

IPC分类号： C23C16/34 ,  H01L43/12 ,  H01J37/32 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/345 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/511 ,  H01J37/32119 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/3321 ,  H01L21/0217 ,  H01L21/02274 ,  H01L43/12

摘要： A plasma processing apparatus for alternately performing a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases. The apparatus includes: a processing container that has a dielectric window in a ceiling and removably accommodates a workpiece; an exhaust unit that evacuates the processing container; a processing gas supply unit that supplies the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit including a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit including a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit that supplies electromagnetic waves into the plasma generating space; a bypass exhaust path; and an opening/closing valve.

摘要翻译： 一种用于交替地执行使用第一和第二处理气体的第一等离子体处理步骤的等离子体处理装置和使用第三和第四处理气体的第二等离子体处理步骤 该装置包括：处理容器，其在天花板中具有介电窗口并可移除地容纳工件; 排气单元，其排出处理容器; 处理气体供应单元，其将第一，第二，第三和第四处理气体供应到处理容器中; 第一气体导入单元，包括顶板气体注入口，电介质窗口气体流路和第一外部气体流路; 第二气体引入单元，包括侧壁气体注入口，侧壁气体流路和第二外部气体流路; 向所述等离子体产生空间供给电磁波的电磁波供给部; 旁路排气通道; 和开闭阀。

公开(公告)号：US09543121B2

公开(公告)日：2017-01-10

申请号：US13451867

申请日：2012-04-20

申请人： Kazuo Sasaki ,  Toshihiro Tojo

发明人： Kazuo Sasaki ,  Toshihiro Tojo

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/3211 ,  H01J37/32119

摘要： An inductively coupled plasma processing apparatus performs plasma processing on a substrate by generating an inductively coupled plasma in a plasma generation region in a processing chamber. The apparatus includes a high frequency antenna for generating the inductively coupled plasma in the plasma generation region and a metal window provided between the plasma generation region and the high frequency antenna. The metal window is firstly divided into two or more sections electrically insulated from each other by a line along a peripheral direction of the metal window and then secondly divided into sections electrically insulated from each other by lines along directions crossing with the peripheral direction.

摘要翻译： 电感耦合等离子体处理装置通过在处理室中的等离子体产生区域中产生电感耦合等离子体，在衬底上进行等离子体处理。 该装置包括用于在等离子体产生区域中产生电感耦合等离子体的高频天线和设置在等离子体产生区域和高频天线之间的金属窗口。 金属窗首先通过沿着金属窗的圆周方向的线彼此电绝缘的两个或更多个部分，然后通过沿着与周边方向交叉的方向的线彼此电绝缘。

公开(公告)号：US20160240402A1

公开(公告)日：2016-08-18

申请号：US15139243

申请日：2016-04-26

申请人： Applied Materials, Inc.

发明人： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC分类号： H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC分类号： H01J37/32972 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45559 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

摘要： A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

公开(公告)号：US09373483B2

公开(公告)日：2016-06-21

申请号：US14420102

申请日：2013-05-29

申请人： TOKYO ELECTRON LIMITED

发明人： Kazushi Kaneko ,  Kazunori Funazaki ,  Hideo Kato

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32128 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4622

摘要： Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.

摘要翻译： 提供了一种使用等离子体对加工对象物体进行处理的等离子体处理装置。 等离子体处理装置包括处理容器和等离子体生成机构，其包括设置在处理容器外部的高频发生器，以产生高频波。 等离子体产生机构使用高频波在处理容器中产生等离子体，并且包括：振荡高频波的高频振荡器; 电源单元，向高频振荡器供电; 将由高频振荡器振荡的高频波传播到成为负载侧的处理容器侧的波导路径; 以及电压驻波比可变机构，其根据从电源单元供给的电力，改变由高频波形成的波导路径中的电压驻波的电压驻波比。

公开(公告)号：US20150364300A1

公开(公告)日：2015-12-17

申请号：US14305967

申请日：2014-06-16

申请人： Lam Research Corporation

发明人： Federico Galli

IPC分类号： H01J37/32 ,  C23C16/52

CPC分类号： H01J37/32935 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32862 ,  H01J37/32917 ,  H01J37/3299

摘要： In one aspect, a plasma system includes a dielectric enclosure enclosing a portion of a reaction chamber, a conductive coil extending along a perimeter of the enclosure, and a generator for providing a first electrical signal to the coil to cause a plasma to be generated in the reaction chamber. The system additionally includes a probe located within the reaction chamber, a sensing device for sensing a second electrical signal generated in the probe via the plasma while the first electrical signal is provided to the coil, and a processing unit for determining a metric based on the sensed second electrical signal, the metric indicating a measure of deposition or removal of a conductive material on an inside surface of the enclosure.

摘要翻译： 在一个方面，等离子体系统包括封闭反应室的一部分的电介质外壳，沿着外壳的周边延伸的导电线圈和用于向线圈提供第一电信号以使等离子体产生的发生器 反应室。 所述系统还包括位于所述反应室内的探针，用于在所述第一电信号被提供给所述线圈的同时，经由所述等离子体感测在所述探针中产生的第二电信号的感测装置，以及用于基于所述第一电信号确定度量的处理单元 感测的第二电信号，该度量指示在外壳的内表面上沉积或去除导电材料的量度。

公开(公告)号：US20150214011A1

公开(公告)日：2015-07-30

申请号：US14420102

申请日：2013-05-29

申请人： TOKYO ELECTRON LIMITED

发明人： Kazushi Kaneko ,  Kazunori Funazaki ,  Hideo Kato

IPC分类号： H01J37/32

CPC分类号： H01J37/32128 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4622

摘要： Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.

摘要翻译： 提供了一种使用等离子体对加工对象物体进行处理的等离子体处理装置。 等离子体处理装置包括处理容器和等离子体生成机构，其包括设置在处理容器外部的高频发生器，以产生高频波。 等离子体产生机构使用高频波在处理容器中产生等离子体，并且包括：振荡高频波的高频振荡器; 电源单元，向高频振荡器供电; 将由高频振荡器振荡的高频波传播到成为负载侧的处理容器侧的波导路径; 以及电压驻波比可变机构，其根据从电源单元供给的电力，改变通过高频波形成在波导路径中的电压驻波的电压驻波比。