公开(公告)号：US11967524B2

公开(公告)日：2024-04-23

申请号：US17089221

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Praket Prakash Jha ,  Shuchi Sunil Ojha ,  Jingmei Liang ,  Abhijit Basu Mallick ,  Shankar Venkataraman

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/76877 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31111 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/76802 ,  H10B41/27 ,  H10B43/27

Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.

公开(公告)号：US20240120193A1

公开(公告)日：2024-04-11

申请号：US17960569

申请日：2022-10-05

Applicant: Applied Materials, Inc.

Inventor： Shankar Venkataraman ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Lakmal C. Kalutarage ,  Jongbeom Seo ,  Sai Hooi Yeong ,  Benjamin Colombeau ,  Balasubramanian Pranatharthiharan

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66

CPC classification number: H01L21/02126 ,  H01L21/0206 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/31116 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/42392

Abstract: Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.

公开(公告)号：US11946134B2

公开(公告)日：2024-04-02

申请号：US17585755

申请日：2022-01-27

Applicant: Applied Materials, Inc.

Inventor： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  John Sudijono

IPC: C23C16/27 ,  C23C16/02 ,  C23C16/455 ,  B82Y40/00

CPC classification number: C23C16/279 ,  C23C16/0227 ,  C23C16/45536 ,  B82Y40/00

Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.

公开(公告)号：US20240105499A1

公开(公告)日：2024-03-28

申请号：US17954565

申请日：2022-09-28

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Xinke Wang ,  Xiang Ji ,  Praket Prakash Jha

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76224 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/7688

Abstract: Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of the trench, depositing a carbon-containing mask layer on the silicon-containing material on the bottom surface of the trench, where the carbon-containing mask layer is not formed on the top surfaces of the trench, removing the portion of the silicon-containing material from the top surfaces of the trench, and removing the carbon-containing mask layer from the silicon-containing material on the bottom surface of the trench, where the as-deposited silicon-containing material remains on the bottom surface of the trench.

公开(公告)号：US20230407468A1

公开(公告)日：2023-12-21

申请号：US18242082

申请日：2023-09-05

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/40 ,  H01L21/768 ,  H01L21/311 ,  C23C16/56 ,  C23C16/455 ,  H01L21/762 ,  H01L21/02

CPC classification number: C23C16/407 ,  H01L21/76837 ,  H01L21/31111 ,  C23C16/56 ,  C23C16/45527 ,  H01L21/76224 ,  H01L21/0228

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

公开(公告)号：US20230402285A1

公开(公告)日：2023-12-14

申请号：US17839809

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/0332

Abstract: Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD). The carbon-containing film may act as an etch protection layer or an etch resistance layer for the sidewall of the nanostructures. When no etch is performed, the carbon-containing film may act as a liner material.

公开(公告)号：US11842897B2

公开(公告)日：2023-12-12

申请号：US16593757

申请日：2019-10-04

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/683 ,  H01L21/311 ,  H01L21/027 ,  H01L21/67 ,  H01J37/32 ,  C23C16/509 ,  C23C16/27

CPC classification number: H01L21/0337 ,  C23C16/272 ,  C23C16/509 ,  H01J37/32724 ,  H01L21/0332 ,  H01L21/6833 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32834 ,  H01J2237/1825 ,  H01J2237/24585 ,  H01J2237/3321 ,  H01L21/0273 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/67248

Abstract: Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about −10° C. to about 20° C. and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.

公开(公告)号：US11830734B2

公开(公告)日：2023-11-28

申请号：US17324352

申请日：2021-05-19

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/02532 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02612 ,  H01L21/02658 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400° C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.

公开(公告)号：US11817320B2

公开(公告)日：2023-11-14

申请号：US16554834

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Kelvin Chan ,  Hien Minh Le ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Karthik Janakiraman

IPC: C23C16/50 ,  H01L21/285 ,  H01L21/02 ,  C23C16/06 ,  C23C16/02 ,  C23C16/40 ,  C23C16/505 ,  C23C28/00 ,  H01L21/3205 ,  H01L21/768 ,  H10B43/27

CPC classification number: H01L21/28506 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/505 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/42 ,  H01L21/0245 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76876 ,  H10B43/27

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US20230207314A1

公开(公告)日：2023-06-29

申请号：US17562441

申请日：2021-12-27

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  Supriya Ghosh ,  Jiecong Tang ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: H01L21/02

CPC classification number: H01L21/02565 ,  H01L21/02614

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.