Method of manufacturing printed circuit board having bump
    22.
    发明授权
    Method of manufacturing printed circuit board having bump 有权
    制造具有凹凸的印刷电路板的方法

    公开(公告)号:US08986555B2

    公开(公告)日:2015-03-24

    申请号:US12892047

    申请日:2010-09-28

    Abstract: A method of manufacturing a printed circuit board having a bump is disclosed. The method includes preparing a first carrier having a first circuit formed thereon, compressing the first carrier to one surface of an insulation layer such that the first circuit is buried, stacking an etching resist on the first carrier in accordance with where the bump is to be formed and forming the bump by etching the first carrier. In accordance with an embodiment of the present invention, the difference in height between a bump and its adjacent bump in a printed circuit board can be reduced, and thus electrical connection between an electronic component and the printed circuit board can be better implemented.

    Abstract translation: 公开了一种制造具有凸块的印刷电路板的方法。 该方法包括制备其上形成有第一电路的第一载体,将第一载体压缩到绝缘层的一个表面,使得第一电路被掩埋,根据凸点将在第一载体上堆叠抗蚀剂 通过蚀刻第一载体形成和形成凸块。 根据本发明的实施例,可以减小印刷电路板中的凸块与其相邻凸块之间的高度差,从而可以更好地实现电子部件和印刷电路板之间的电连接。

    TWO SOLENOID VALVE RELAY TWO-STAGE FUEL INJECTION VALVE FOR DIESEL ENGINES
    27.
    发明申请
    TWO SOLENOID VALVE RELAY TWO-STAGE FUEL INJECTION VALVE FOR DIESEL ENGINES 有权
    两个电磁阀继电器柴油发动机两级燃油喷射阀

    公开(公告)号:US20130037004A1

    公开(公告)日:2013-02-14

    申请号:US13642276

    申请日:2010-10-26

    CPC classification number: F02M45/086 F02M47/027 F02M61/182 F02M2200/46

    Abstract: The present invention provides a two solenoid valve relay with a two-phase fuel injection valve for a diesel engine, which is installed on a valve itself to enable injection at pressure greater than opening pressure, at which the fuel enters into a fuel valve, thereby improving fuel injection performance, and which is configured to enable adjustment of an injection timing at the opening pressure within the valve, wherein injection timings through a solenoid valve is provided for low load and high load, respectively, such that a distinct difference exists between the injection timings to open the nozzle hole of the nozzle in a differential manner at pressure higher than the pressure, at which the fuel enters to the fuel valve and internal spring opening pressure, thereby injecting fuel at high pressure even at low load to facilitate vaporization, and wherein, in case of a high speed operation or high load, low pressure/high pressure needle valves are opened at the same time to quickly inject fuel of a high volume through a plurality of nozzle holes, thereby improving combustion performance of an engine, and wherein a space between the needle valve and the nozzle hole which are closed after the injection is minimized because the nozzle hole is opened differentially and sequentially according to pressure, thereby avoiding waste of fuel and reducing harmful gas (smoke, Nox).

    Abstract translation: 本发明提供了一种具有用于柴油发动机的两相燃料喷射阀的两个电磁阀继电器,该电磁阀继电器安装在阀本身上以能够在大于开启压力的压力下喷射燃料进入燃料阀,由此 提高燃料喷射性能,并且其被配置为能够调节阀内的打开压力下的喷射正时,其中通过电磁阀分别为低负载和高负载提供喷射定时,使得在 喷射正时以不同于燃料进入燃料阀的压力和内部弹簧开启压力的压力以不同的方式打开喷嘴的喷嘴孔,从而甚至在低负载下高压喷射燃料以促进汽化, 并且其中,在高速运转或高负载的情况下,低压/高压针阀同时打开以快速地 通过多个喷嘴孔大体积的喷射燃料,从而改善发动机的燃烧性能,并且其中在喷射之后关闭的针阀和喷嘴孔之间的空间被最小化,因为喷嘴孔差异地并且顺序地打开 根据压力,从而避免燃料的浪费和减少有害气体(烟雾,Nox)。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    28.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
    制造半导体器件的方法

    公开(公告)号:US20120015490A1

    公开(公告)日:2012-01-19

    申请号:US13183630

    申请日:2011-07-15

    CPC classification number: H01L21/823814 H01L21/823864 H01L29/7848

    Abstract: A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively.

    Abstract translation: 一种制造半导体器件的方法包括在衬底上形成栅极结构; 形成牺牲隔离物可以形成在栅极衬底的侧壁上; 通过使用栅极结构和牺牲隔离物作为离子注入掩模的第一离子注入工艺将第一杂质注入到衬底的部分中以形成源区和漏区; 去除牺牲隔离物; 以及通过使用所述栅极结构作为离子注入掩模的第二离子注入工艺将第二杂质和碳原子注入到所述衬底的部分中,以分别形成源极和漏极延伸区域和碳掺杂区域。

    BOARD ON CHIP PACKAGE SUBSTRATE AND MANUFACTURING METHOD THEREOF
    30.
    发明申请
    BOARD ON CHIP PACKAGE SUBSTRATE AND MANUFACTURING METHOD THEREOF 审中-公开
    芯片包装基板及其制造方法

    公开(公告)号:US20110110058A1

    公开(公告)日:2011-05-12

    申请号:US12748082

    申请日:2010-03-26

    CPC classification number: H05K3/00 H01L2224/16225 H05K3/30 Y10T29/49124

    Abstract: A single-layer board on chip package substrate and a manufacturing method thereof are disclosed. In accordance with an embodiment of the present invention, the single-layer board on chip package substrate includes an insulator, a circuit pattern and a flip-chip bonding pad, which are formed on an upper surface of the insulator, a conductive bump, which is in contact with a lower surface of the circuit pattern and penetrates through the insulator, a solder resist layer, which is formed on the upper surface of the insulator such that at least a portion of the flip-chip bonding pad is exposed, and a flip-chip bonding bump, which is formed on an upper surface of the flip-chip bonding pad in order to make a flip-chip connection with an electronic component.

    Abstract translation: 公开了一种单层片上封装衬底及其制造方法。 根据本发明的实施例,片上封装衬底上的单层板包括形成在绝缘体上表面上的绝缘体,电路图案和倒装焊接焊盘,导体凸块, 与电路图案的下表面接触并穿透绝缘体,阻焊层,其形成在绝缘体的上表面上,使得至少一部分倒装芯片接合焊盘露出,并且 倒装芯片焊接凸块,其形成在倒装焊盘的上表面上,以便与电子部件进行倒装芯片连接。

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