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    NANOWIRE AND LARGER GaN BASED HEMTS
    21.
    发明申请
    NANOWIRE AND LARGER GaN BASED HEMTS 有权
    NANOWIRE和LARGER基于GaN的HEMTS

    公开(公告)号：US20120225526A1

    公开(公告)日：2012-09-06

    申请号：US13461331

    申请日：2012-05-01

    Applicant: Stephen D. Hersee ,  Xin Wang

    Inventor： Stephen D. Hersee ,  Xin Wang

    IPC: H01L21/335 ,  B82Y40/00

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789

    Abstract: Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form III-N post(s) followed by formation of the shell member(s).

    Abstract translation: 提供了纳米线和更大的后置HEMT，这样的HEMT的阵列及其制造方法。 在一个实施例中，HEMT可以包括基于III-N的核 - 壳结构，其包括芯构件（例如，GaN），围绕芯构件的长度的壳构件（例如，AlGaN）和二维电子气 2-DEG）。 包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方，并且栅极材料可以围绕壳构件的一部分设置。 用于制造纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。 用于制造后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成III-N柱，随后形成壳构件。

    Metal organic molecular beam epitaxy (MOMBE) apparatus
    25.
    发明授权
    Metal organic molecular beam epitaxy (MOMBE) apparatus 失效
    金属有机分子束外延（MOMBE）装置

    公开(公告)号：US4911101A

    公开(公告)日：1990-03-27

    申请号：US221633

    申请日：1988-07-20

    Applicant: James M. Ballingall, III ,  Stephen D. Hersee

    Inventor： James M. Ballingall, III ,  Stephen D. Hersee

    IPC: C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14

    CPC classification number: C23C16/4551 ,  C23C16/4482 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40

    Abstract: The invention relates to apparatus for epitaxial processing using metal organic molecular beams. The MOMBE apparatus employs a manifold for supplying metal organic vapor to a reactor which is operated under vacuum. The manifold includes a bubbler in which MO vapor is formed and mixed with a carrier gas. The bubbler provides flexible, three parameter control of the MO reagent permitting use with MO reagents of low vapor pressure. A compensation flow is provided parallelling the reagent flow and employing four valves which are ganged and switched so as to supply the MO carrier gas mixture either to the reactor line or to the vent line and maintain equal flows and pressures during this switching operation. The apparatus is capable of forming very thin reproducible epitaxial layers.

    Abstract translation: 本发明涉及使用金属有机分子束进行外延加工的装置。 MOMBE装置采用歧管将金属有机蒸气提供给在真空下操作的反应器。 歧管包括其中形成MO蒸气并与载气混合的起泡器。 起泡器为MO试剂提供灵活的三参数控制，允许与低蒸气压的MO试剂一起使用。 提供了与试剂流并列的补偿流，并采用四个阀组合和切换，以便将MO载气混合物供应到反应器管线或排气管线，并在该切换操作期间保持相等的流量和压力。 该装置能够形成非常薄的可再生外延层。

    SOLID-STATE MICROSCOPE FOR SELECTIVELY IMAGING A SAMPLE
    26.
    发明申请
    SOLID-STATE MICROSCOPE FOR SELECTIVELY IMAGING A SAMPLE 审中-公开
    用于选择性成像样品的固态显微镜

    公开(公告)号：US20150124076A1

    公开(公告)日：2015-05-07

    申请号：US14591773

    申请日：2015-01-07

    Applicant: Stephen D. Hersee

    Inventor： Stephen D. Hersee

    IPC: G02B21/00 ,  H01L33/00 ,  G02B21/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/24 ,  G02B21/36 ,  H01L33/06

    CPC classification number: G02B21/0004 ,  B82Y15/00 ,  B82Y20/00 ,  G02B21/00 ,  G02B21/002 ,  G02B21/06 ,  G02B21/36 ,  G02B21/361 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L2933/0016

    Abstract: Exemplary embodiments provide solid-state microscope (SSM) devices and methods for processing and using the SSM devices. The solid-state microscope devices can include a light emitter array having a plurality of light emitters with each light emitter individually addressable. During operation, each light emitter can be biased in one of three operating states including an emit state, a detect state, and an off state. The light emitter can include an LED (light emitting diode) including, but not limited to, a nanowire based LED or a planar LED to provide various desired image resolutions for the SSM devices. In an exemplary embodiment, for near-field microscopy, the resolution of the SSM microscope can be essentially defined by the pitch p, i.e., center-to-center spacing between two adjacent light emitters, of the light emitter array.

    Abstract translation: 示例性实施例提供了用于处理和使用SSM装置的固态显微镜（SSM）装置和方法。 固态显微镜装置可以包括具有多个发光体的光发射器阵列，每个发光体可单独寻址。 在操作期间，每个光发射器可以被偏置在包括发射状态，检测状态和关闭状态的三种操作状态之一中。 光发射器可以包括LED（发光二极管），其包括但不限于基于纳米线的LED或平面LED，以为SSM器件提供各种期望的图像分辨率。 在一个示例性实施例中，对于近场显微镜，SSM显微镜的分辨率可以基本上由光发射器阵列的间距p，即两个相邻发光体之间的中心到中心间隔定义。

    NANOWIRE AND LARGER GaN BASED HEMTS
    29.
    发明申请
    NANOWIRE AND LARGER GaN BASED HEMTS 有权
    NANOWIRE和LARGER基于GaN的HEMTS

    公开(公告)号：US20110169012A1

    公开(公告)日：2011-07-14

    申请号：US12246044

    申请日：2008-10-06

    Applicant: Stephen D. Hersee ,  Xin Wang

    Inventor： Stephen D. Hersee ,  Xin Wang

    IPC: H01L27/105 ,  H01L29/778 ,  H01L21/338 ,  H01L21/8232

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789

    Abstract: Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form II-N post(s) followed by formation of the shell member(s).

    Abstract translation: 提供了纳米线和更大的后置HEMT，这样的HEMT的阵列及其制造方法。 在一个实施例中，HEMT可以包括基于III-N的核 - 壳结构，其包括芯构件（例如，GaN），围绕芯构件的长度的壳构件（例如，AlGaN）和二维电子气 2-DEG）。 包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方，并且栅极材料可以围绕壳构件的一部分设置。 用于制造纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。 制备后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成II-N柱，随后形成壳构件。

    Thin-walled structures
    30.
    发明授权
    Thin-walled structures 有权
    薄壁结构

    公开(公告)号：US07968359B2

    公开(公告)日：2011-06-28

    申请号：US12237469

    申请日：2008-09-25

    Applicant: Stephen D. Hersee

    Inventor： Stephen D. Hersee

    IPC: H01L21/00

    CPC classification number: C30B29/60 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01S5/10 ,  H01S5/18 ,  H01S5/34 ,  H01S5/3428 ,  Y02E10/544 ,  Y10S977/816

    Abstract: Various embodiments provide thin-walled structures and methodologies for their formation. In one embodiment, the thin-walled structure can be formed by disposing a semiconductor material in a patterned aperture using a selective growth mask that includes a plurality of patterned apertures, followed by a continuous growth of the semiconductor material using a pulsed growth mode. The patterned aperture can include at least one lateral dimension that is small enough to allow a threading defect termination at sidewall(s) of the formed thin-walled structure. In addition, high-quality III-N substrate structures and core-shell MQW active structures can be formed from the thin-walled structures for use in devices like light emitting diodes (LEDs), lasers, or high electron mobility transistors (HEMTs).

    Abstract translation: 各种实施例提供了用于其形成的薄壁结构和方法。 在一个实施例中，薄壁结构可以通过使用包括多个图案化孔的选择性生长掩模将半导体材料设置在图案化孔中形成，随后使用脉冲生长模式连续生长半导体材料。 图案化的孔可以包括至少一个足够小的横向尺寸，以允许在形成的薄壁结构的侧壁处的穿线缺陷终止。 此外，可以从用于诸如发光二极管（LED），激光器或高电子迁移率晶体管（HEMT）的器件中的薄壁结构形成高质量的III-N衬底结构和核 - 壳MQW有源结构。

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