公开(公告)号：US20060046088A1

公开(公告)日：2006-03-02

申请号：US10934635

申请日：2004-09-02

Applicant: Salman Akram ,  James Wark ,  William Hiatt

Inventor： Salman Akram ,  James Wark ,  William Hiatt

IPC: H01L29/12

CPC classification number: H01L21/76879 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1831 ,  C23C18/1834 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/76898 ,  H01L2924/00013 ,  Y10T428/12528 ,  Y10T428/24917 ,  H01L2224/29099

Abstract: A method of selectively plating nickel on an intermediate semiconductor device structure. The method comprises providing an intermediate semiconductor device structure having at least one aluminum or copper structure and at least one tungsten structure. One of the aluminum or copper structure and the tungsten structure is nickel plated while the other remains unplated. The aluminum or copper structure or the tungsten structure may first be activated toward nickel plating. The activated aluminum or copper structure or the activated tungsten structure may then be nickel plated by immersing the intermediate semiconductor device structure in an electroless nickel plating solution. The unplated aluminum or copper structure or the unplated tungsten structure may subsequently be nickel plated by activating the unplated structure and nickel plating the activated structure. A method of simultaneously plating the aluminum or copper structure and the tungsten structure with nickel is also disclosed, as is an intermediate semiconductor device structure.

Abstract translation: 在中间半导体器件结构上选择性镀镍的方法。 该方法包括提供具有至少一个铝或铜结构和至少一个钨结构的中间半导体器件结构。 铝或铜结构之一和钨结构是镀镍的，而另一个保持未镀层。 可以首先将铝或铜结构或钨结构活化成镀镍。 然后可以通过将中间半导体器件结构浸入无电镀镍溶液中来将活化的铝或铜结构或活化的钨结构镀镍。 然后通过激活未镀层的结构和镀镍活化的结构，可以将未镀覆的铝或铜结构或未镀覆的钨结构镀镍。 还公开了一种用镍同时电镀铝或铜结构和钨结构的方法，以及中间半导体器件结构。

公开(公告)号：US20060040421A1

公开(公告)日：2006-02-23

申请号：US10922192

申请日：2004-08-19

Applicant: Warren Farnworth ,  Alan Wood ,  James Wark ,  David Hembree ,  Rickie Lake

Inventor： Warren Farnworth ,  Alan Wood ,  James Wark ,  David Hembree ,  Rickie Lake

IPC: H01L21/50

CPC classification number: H01L31/0203 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14683 ,  H01L2224/48227 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Methods of packaging microelectronic imagers and packaged microelectronic imagers. An embodiment of such a method can include providing an imager workpiece having a plurality of imager dies arranged in a die pattern and providing a cover substrate through which a desired radiation can propagate. The imager dies include image sensors and integrated circuitry coupled to the image sensors. The method further includes providing a spacer having a web that includes an adhesive and has openings arranged to be aligned with the image sensors. For example, the web can be a film having an adhesive coating, or the web itself can be a layer of adhesive. The method continues by assembling the imager workpiece with the cover substrate such that (a) the spacer is between the imager workpiece and the cover substrate, and (b) the openings are aligned with the image sensors. The attached web is not cured after the imager workpiece and the cover substrate have both been adhered to the web. As such, the web does not outgas contaminants into the compartments in which the image sensors are housed.

公开(公告)号：US20060011809A1

公开(公告)日：2006-01-19

申请号：US10894262

申请日：2004-07-19

Applicant: Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Alan Wood ,  Peter Benson ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Charles Watkins ,  Salman Akram

Inventor： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Alan Wood ,  Peter Benson ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Charles Watkins ,  Salman Akram

IPC: H01L27/00

CPC classification number: H01L27/00 ,  B33Y80/00 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L27/14687 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/00014

Abstract: Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.

公开(公告)号：US20050275083A1

公开(公告)日：2005-12-15

申请号：US11151923

申请日：2005-06-14

Applicant: Kyle Kirby ,  Warren Farnworth ,  James Wark ,  William Hiatt ,  David Hembree ,  Alan Wood

Inventor： Kyle Kirby ,  Warren Farnworth ,  James Wark ,  William Hiatt ,  David Hembree ,  Alan Wood

IPC: G01R1/073 ,  H01L21/66 ,  H01L23/48 ,  H01L23/498 ,  H01L23/58 ,  H01R13/24 ,  H05K3/32 ,  H05K3/40 ,  H05K7/06 ,  H05K7/10

CPC classification number: G01R1/0735 ,  G01R1/07314 ,  H01L23/13 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01R12/714 ,  H01R13/24 ,  H01R2201/20 ,  H05K3/326 ,  H05K7/1069 ,  H05K2201/0314 ,  H05K2201/09036 ,  H05K2201/10378 ,  Y10T29/49165 ,  Y10T29/49174 ,  Y10T29/49204 ,  Y10T29/49222 ,  H01L2224/05599

Abstract: A compliant contact pin assembly and a contactor card system are provided. The compliant contact pin assembly includes a contact pin formed from a portion of a substrate with the contact pin compliantly held suspended within the substrate by a compliant coupling structure. The suspension within the substrate results in a compliant deflection orthogonal to the plane of the substrate. The contact pin assembly is formed by generally thinning the substrate around the contact pin location and then specifically thinning the substrate immediately around the contact pin location for forming a void. The contact pin is compliantly coupled, in one embodiment by compliant coupling material, and in another embodiment by compliantly flexible portions of the substrate.

公开(公告)号：US20050046038A1

公开(公告)日：2005-03-03

申请号：US10962931

申请日：2004-10-11

Applicant: Warren Farnworth ,  Alan Wood ,  William Hiatt ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Pete Benson

Inventor： Warren Farnworth ,  Alan Wood ,  William Hiatt ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Pete Benson

IPC: H01L21/56 ,  H01L21/60 ,  H01L21/768 ,  H01L21/98 ,  H01L23/31 ,  H01L23/48 ,  H01L25/065 ,  G01R31/02

CPC classification number: H01L21/561 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/207 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A semiconductor component includes a base die and a secondary die stacked on and bonded to the base die. The base die includes conductive vias which form an internal signal transmission system for the component, and allow the circuit side of the secondary die to be bonded to the back side of the base die. The component also includes an array of terminal contacts on the circuit side of the base die in electrical communication with the conductive vias. The component can also include an encapsulant on the back side of the base die, which substantially encapsulates the secondary die, and a polymer layer on the circuit side of the base die which functions as a protective layer, a rigidifying member and a stencil for forming the terminal contacts. A method for fabricating the component includes the step of bonding singulated secondary dice to base dice on a base wafer, or bonding a secondary wafer to the base wafer, or bonding singulated secondary dice to singulated base dice.

Abstract translation: 半导体部件包括基模和层叠在基模上的二次模。 基模具包括形成用于部件的内部信号传输系统的导电通孔，并允许二次管芯的电路侧接合到基座的后侧。 该组件还包括与导电通孔电连通的基座芯片的电路侧上的端子触点阵列。 该组件还可以包括在基模的背侧上的密封剂，其基本上封装次模，以及在用作保护层的基模的电路侧上的聚合物层，用于形成的用于固化的模板 终端接触。 一种用于制造该部件的方法包括将单个二次骰子接合到基底晶片上的基底骰子上，或将次晶片接合到基底晶片，或将单个二次骰子接合到单个基体骰子的步骤。

公开(公告)号：US20100171217A1

公开(公告)日：2010-07-08

申请号：US12725724

申请日：2010-03-17

Applicant: Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

Inventor： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

IPC: H01L23/498

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US20080111213A1

公开(公告)日：2008-05-15

申请号：US11924781

申请日：2007-10-26

Applicant: Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

Inventor： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

IPC: H01L23/488

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US07300857B2

公开(公告)日：2007-11-27

申请号：US10932296

申请日：2004-09-02

Applicant: Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

Inventor： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

IPC: H01L21/441

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US20070063722A1

公开(公告)日：2007-03-22

申请号：US11601546

申请日：2006-11-17

Applicant: James Wark

Inventor： James Wark

IPC: G01R31/02

CPC classification number: G01R1/07307 ,  G01R1/0483 ,  G01R31/2831 ,  G01R31/2886 ,  H05K3/325 ,  H05K3/4007

Abstract: An apparatus for testing unpackaged semiconductor dice having raised ball contact locations is disclosed. The apparatus uses a temporary interconnect wafer that is adapted to establish an electrical connection with the raised ball contact locations on the die without damage to the ball contact locations. The interconnect is fabricated on a substrate, such as silicon, where contact members are formed in a pattern that matches the size and spacing of the ball contact locations on the die to be tested. The contact members on the interconnect wafer are formed as either pits, troughs, or spike contacts. The spike contacts penetrate through the oxide layer formed on the raised ball contact locations. Conductive traces are provided in both rows and columns and are terminated on the inner edges of the walls of the pits formed in the substrate.

Abstract translation: 公开了一种用于测试具有凸起的球接触位置的未包装半导体晶片的测试装置。 该装置使用临时互连晶片，其适于与模具上的凸起的球接触位置建立电连接，而不损坏球接触位置。 互连制造在诸如硅的衬底上，其中接触构件以与待测试的管芯上的球接触位置的尺寸和间距匹配的图案形成。 互连晶片上的接触构件形成为凹坑，凹槽或尖峰触点。 尖钉触点穿过形成在凸起接触位置上的氧化物层。 导电迹线设置在行和列中，并且终止于形成在基板中的凹坑的壁的内边缘。

公开(公告)号：US20060270108A1

公开(公告)日：2006-11-30

申请号：US11497699

申请日：2006-08-02

Applicant: Warren Farnworth ,  Alan Wood ,  William Hiatt ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Pete Benson

Inventor： Warren Farnworth ,  Alan Wood ,  William Hiatt ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Pete Benson

IPC: H01L21/00

CPC classification number: H01L21/561 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/207 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A method for fabricating a semiconductor component includes the steps of providing a substrate having a contact on a circuit side thereof, forming an opening from a backside of the substrate to the contact, forming a conductive via in the opening in electrical contact with a surface of the contact, and forming a second contact on the back side in electrical communication with the conductive via. The method can also include the steps of thinning the substrate from the backside, forming insulating layers on the circuit side and the backside, and forming a conductor and terminal contact on the circuit side in electrical communication with the conductive via. A semiconductor component includes the contact on the circuit side, the conductive via in electrical contact with the contact, and the second contact on the backside in electrical communication with the conductive via. The semiconductor component can also include the insulating layers, the conductor and the terminal contact.

Abstract translation: 一种制造半导体部件的方法包括以下步骤：提供在其电路侧具有接触的基板，从基板的背面形成开口到触点，在开口中形成导电通孔，该导电通孔与 接触，并且在背面形成与导电通孔电连通的第二接触。 该方法还可以包括从背面减薄衬底的步骤，在电路侧和背面形成绝缘层，以及在电路侧上形成与导电通孔电连通的导体和端子触点。 半导体部件包括电路侧的触点，与触点电接触的导电通孔以及与导电通路电气连通的背侧的第二触点。 半导体部件还可以包括绝缘层，导体和端子触头。