Patent search ap:("THE REGENTS OF THE UNIVERSITY OF CALIFORNIA") AND inv:"James S. Speck" Page 3

21.

发明申请
APPARATUS USED FOR THE GROWTH OF GROUP-III NITRIDE CRYSTALS UTILIZING CARBON FIBER CONTAINING MATERIALS AND GROUP-III NITRIDE GROWN THEREWITH 审中-公开
Title translation: 用于生长含III族氮化物晶体的装置利用含有碳纤维的材料和III族硝酸盐

公开(公告)号：US20130263775A1

公开(公告)日：2013-10-10

申请号：US13860382

申请日：2013-04-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Siddha Pimputkar , Paul Von Dollen , Shuji Nakamura , James S. Speck

IPC: C30B7/10 , C30B9/10

CPC classification number: C30B7/10 , C30B7/105 , C30B9/10 , C30B29/403 , Y10T117/1096

Abstract: A method and apparatus for growing crystals in a reactor vessel, wherein the reactor vessel uses carbon fiber containing materials as a structural element to contain the materials for growing the crystals as a solid, liquid or gas within the reactor vessel, such that the reactor vessel can withstand pressures or temperatures necessary for the growth of the crystals. The carbon fiber containing materials encapsulate at least one component of the reactor vessel, wherein stresses from the encapsulated component are transferred to the carbon fiber containing materials. The carbon fiber containing materials may be wrapped around the encapsulated component one or more times sufficient to maintain a desired pressure differential between an exterior and interior of the encapsulated component.

Abstract translation: 一种用于在反应器容器中生长晶体的方法和装置，其中反应器容器使用含碳纤维的材料作为结构元件，以容纳在反应器容器内作为固体，液体或气体生长晶体的材料，使得反应器容器可承受晶体生长所需的压力或温度。含碳纤维的材料包封反应器容器的至少一个组分，其中来自包封的组分的应力被转移到含碳纤维的材料中。含碳纤维的材料可以围绕包封的组分缠绕一次或多次，足以在包封的组分的外部和内部之间保持所需的压力差。

22.

发明申请
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 有权
Title translation: 通过部分或完全放松的铝氮化镓氮化物层与杂质分离的二氧化氮量子阱中的各向异性应变控制

公开(公告)号：US20130259080A1

公开(公告)日：2013-10-03

申请号：US13904908

申请日：2013-05-29

Applicant: The Regents of the University of California

Inventor： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young

IPC: H01L33/12 , H01S5/34 , H01S5/32

CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛位错，使得有源层中的各向异性应变被下层调制。

23.

发明授权
III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers 有权

公开(公告)号：US11411137B2

公开(公告)日：2022-08-09

申请号：US16075949

申请日：2017-02-06

Applicant: The Regents of the University of California

Inventor： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars

IPC: H01L33/32 , H01L33/00 , H01L25/075 , H01L33/06 , H01L33/42 , H01L33/04

Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

24.

发明授权
Hybrid growth method for III-nitride tunnel junction devices 有权

公开(公告)号：US11217722B2

公开(公告)日：2022-01-04

申请号：US15743023

申请日：2016-07-11

Applicant: The Regents of the University of California

Inventor： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura

IPC: H01L21/02 , H01L33/00 , H01L33/32 , H01L33/14 , H01L21/00 , H01L31/0304 , C30B23/02 , C30B29/68 , H01S5/40 , C30B25/20 , H01L33/04 , C30B29/40 , H01S5/30 , H01L31/147 , H01L33/06 , H01S5/026 , H01S5/183 , H01S5/343

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

25.

发明申请
CONTACT ARCHITECTURES FOR TUNNEL JUNCTION DEVICES 有权

公开(公告)号：US20210104504A1

公开(公告)日：2021-04-08

申请号：US16325709

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee , Erin C. Young , Charles Forman , John T. Leonard , SeungGeun Lee , Dan Cohen , Robert M. Farrell , Michael Iza , Burhan Saifaddin , Abdullah Almogbel , Humberto Foronda , James S. Speck , Steven P. DenBaars , Shuji Nakamura

IPC: H01L25/16 , H01L33/32 , H01L33/46 , H01L33/62 , H01L33/22

Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

26.

发明申请
METHODS FOR FABRICATING III-NITRIDE TUNNEL JUNCTION DEVICES 审中-公开

公开(公告)号：US20190207043A1

公开(公告)日：2019-07-04

申请号：US16325246

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee , Asad J. Mughal , David Hwang , Erin C. Young , James S. Speck , Steven P. DenBaars , Shuji Nakamura

IPC: H01L31/0304 , H01L33/00 , H01L21/02 , H01L33/32

CPC classification number: H01L31/03044 , H01L21/0254 , H01L21/02579 , H01L33/007 , H01L33/32 , Y02E10/544

Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.

27.

发明申请
HYBRID GROWTH METHOD FOR III-NITRIDE TUNNEL JUNCTION DEVICES 审中-公开

公开(公告)号：US20190074404A1

公开(公告)日：2019-03-07

申请号：US15743023

申请日：2016-07-11

Applicant: The Regents of the University of California

Inventor： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura

IPC: H01L33/00 , H01L33/06 , H01L33/32 , H01L31/147

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

28.

发明授权
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction 有权

公开(公告)号：US09917422B2

公开(公告)日：2018-03-13

申请号：US14721729

申请日：2015-05-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck

IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34

CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

29.

发明授权
Method of controlling stress in group-III nitride films deposited on substrates 有权

公开(公告)号：US09691712B2

公开(公告)日：2017-06-27

申请号：US14466420

申请日：2014-08-22

Applicant: The Regents of the University of California

Inventor： Hugues Marchand , Brendan J. Moran , Umesh K. Mishra , James S. Speck

IPC: H01L23/00 , H01L29/20 , H01L29/205 , H01L21/02 , C30B25/02 , C30B29/40 , H01L33/00 , H01L33/12 , H01L33/32

CPC classification number: H01L23/562 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205 , H01L33/0025 , H01L33/0066 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L2924/0002 , H01L2924/00

Abstract: Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.