摘要:
A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.
摘要:
A stackable wafer level package and a fabricating method thereof are disclosed. In the stackable wafer level package, bond pads (or redistribution layers) are arranged on a bottom semiconductor die, and metal pillars are formed on some of the bond pads positioned around the edges of the bottom semiconductor die. A top semiconductor die is electrically connected to the other bond pads, on which the metal pillars are not formed, positioned around the center of the bottom semiconductor die through conductive bumps. The metal pillars and the top semiconductor die are encapsulated by an encapsulant. A plurality of interconnection patterns electrically connected to the metal pillars are formed on the surface of the encapsulant. Solder balls are attached to the interconnection patterns. Due to this stack structure, the wafer level package is reduced in thickness and footprint. Therefore, the wafer level package is highly suitable for mobile applications.
摘要:
A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.
摘要:
A semiconductor package, and a method for fabricating the semiconductor package, includes a semiconductor die having a plurality of bond pads including a first bond pad positioned at a center of the bond pad and formed at a first surface of the semiconductor die and a second bond pad spaced from the first bond pad by a predetermined distance while surrounding the first bond pad. The semiconductor package includes first and second posts formed on the bond pads of the semiconductor die and a substrate formed with electrically conductive patterns corresponding to the bond pads of the semiconductor die and bonded to the post.
摘要:
A semiconductor package comprising a semiconductor die having opposed, generally planar first and second surfaces and a peripheral edge. Formed on the second surface of the semiconductor die in close proximity to the peripheral edge thereof are a plurality of bond pads. The semiconductor package further comprises a plurality of leads which are positioned about the peripheral edge of the semiconductor die in spaced relation to the second surface thereof. Each of the leads includes opposed, generally planar first and second surfaces, and a generally planar third surface which is oriented between the first and second surfaces in opposed relation to a portion of the second surface. In the semiconductor package, a plurality of conductive bumps are used to electrically and mechanically connect the bond pads of the semiconductor die to the third surfaces of respective ones of the leads. An encapsulating portion is applied to and partially encapsulates the leads, the semiconductor die, and the conductive bumps.
摘要:
A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.
摘要:
A semiconductor package includes a first semiconductor die; a first redistribution layer coupled to a bonding pad of the first semiconductor die; a first solder bump coupled to the first redistribution layer; a second semiconductor die; a second redistribution layer coupled to a bonding pad of the second semiconductor die; a second solder bump coupled to the second redistribution layer and to the first solder bump; a third redistribution layer coupled to the second redistribution layer; and a solder ball coupled to the third redistribution layer.
摘要:
Disclosed is a wafer level chip scale package and a method for manufacturing the same. The wafer level chip scale package includes a semiconductor die having a first coating layer formed thereon; a redistribution layer formed on the first coating layer and connected to the bond pad; an electronic device placed on the first coating layer; a connection member for electrically connecting the electronic device and the redistribution layer; a conductive post formed on the redistribution layer with a predetermined thickness; a second coating layer for enclosing the first coating layer, the redistribution layer, the electronic device, the connection member, and the conductive post; and a solder ball thermally bonded to the conductive post while protruding to the exterior of the second coating layer. This construction makes it easy to manufacture stacked packages and chip scale packages in a wafer level.
摘要:
A semiconductor package comprising a plurality of leads. Each of the leads defines opposed first and second surfaces. Also included in the semiconductor package is a semiconductor chip which defines opposed first and second surfaces, and includes a plurality of input/output pads disposed on the first surface thereof. A plurality of conductive bumps are used to electrically connect the input/output pads of the semiconductor package to the second surfaces of respective ones of the leads. An encapsulant portion of the semiconductor package covers the semiconductor chip, the conductive bumps, and the second surfaces of the leads such that at least portions of the first surfaces of the leads are exposed within the encapsulant portion.
摘要:
An optical device package having improved conductor efficiency, optical coupling and thermal transfer, as well as various methods for packaging a semiconductor die provide reduced connection length, and improved optical and thermal characteristics. In one package, a conductive circuit pattern disposed on a transparent or translucent cover connects bond pads on the light receiving surface of the semiconductor die to external electrical contacts. The construction of the package reduces connection length and eliminates the air gap between the glass and the die. In another package, a substrate having a protruding wall supports the glass and the substrate provides an electrical connection to terminals for connection to an external device. In another package, the glass is supported by a die mounting board that supports the semiconductor die and includes leads for connection to an external device. In other packages, the glass is supported directly by the semiconductor die and the die is supported by an encapsulated assembly including leads that support the semiconductor die.