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31.
公开(公告)号:US11935989B2
公开(公告)日:2024-03-19
申请号:US17611189
申请日:2020-05-15
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Fabian Kopp , Attila Molnar , Roland Heinrich Enzmann
IPC: H01L33/38 , H01L31/0224 , H01L31/18 , H01L33/00 , H01L33/42
CPC classification number: H01L33/387 , H01L31/022408 , H01L31/1856 , H01L33/0062 , H01L33/42 , H01L2933/0016 , H01L2933/0066
Abstract: An optoelectronic semiconductor chip may include a first region doped with a first dopant, a second region doped with a second dopant, an active region between the first and second regions, a first contact layer having an electrically conductive material and covering the first region. An insulating layer may cover the first contact layer and include first openings, and the insulating layer may include a second contact layer having an electrically conductive material and covering the insulating layer and the first openings. The first openings may completely penetrate the insulating layer, and the second contact layer may include second openings and/or a third contact layer comprising an electrically conductive material is arranged in the first openings in each case between the second contact layer and the insulating layer.
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公开(公告)号:US11931185B2
公开(公告)日:2024-03-19
申请号:US17440657
申请日:2020-03-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Sergey Kudaev , Reiner Windisch , Dennis Sprenger , Ralph Wirth , Thomas Klafta
CPC classification number: A61B5/7207 , A61B5/02427 , A61B5/6801 , A61B2562/12
Abstract: In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.
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33.
公开(公告)号:US11824143B2
公开(公告)日:2023-11-21
申请号:US17285905
申请日:2019-10-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Günter Spath , Daniel Leisen , Simon Jerebic , Matthias Kiessling
CPC classification number: H01L33/502 , H01L33/56 , H01L2933/005 , H01L2933/0041 , H01L2933/0091
Abstract: In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.
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公开(公告)号:US20230350022A1
公开(公告)日:2023-11-02
申请号:US18044391
申请日:2021-08-23
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: Hubert HALBRITTER
IPC: G01S7/481 , H01L25/16 , H01S5/026 , H01S5/062 , H01S5/183 , H01S5/02255 , G01S17/58 , G01S17/34
CPC classification number: G01S7/4811 , H01L25/167 , H01S5/0264 , H01S5/0622 , H01S5/18302 , H01S5/18397 , H01S5/02255 , G01S17/58 , G01S17/34 , G01S7/4818 , G01S7/4815 , H01S5/3095
Abstract: An optoelectronic semiconductor component (10) includes a semiconductor stack (109) in which a surface-emitting laser diode (103) and a photodetector (105) are placed vertically on top of one another. The optoelectronic semiconductor component (10) additionally includes an electric power source (149) that is adapted to modify a current intensity applied to the surface-emitting laser diode (103), thus allowing an emission wavelength to be modified.
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公开(公告)号:US11795384B2
公开(公告)日:2023-10-24
申请号:US17541148
申请日:2021-12-02
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Erik Johansson , Robert Fitzmorris , Peter Chen
CPC classification number: C09K11/025 , C09K11/02 , H01L33/502 , C01P2004/50 , C01P2004/64 , C01P2004/80
Abstract: A nanoparticle is specified. The nanoparticle comprises a nanocrystal configured to convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, a first encapsulation comprising pores which reach into or through the first encapsulation, and a second encapsulation which is different from the first encapsulation, wherein the second encapsulation abuts at least one of the pores. Furthermore, a structure comprising a plurality of nanoparticles and a method for producing nanoparticle is specified.
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公开(公告)号:US11763731B2
公开(公告)日:2023-09-19
申请号:US17610631
申请日:2020-04-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Brendan Holland , Gunnar Petersen , Daniel Richter
CPC classification number: G09G3/32 , G09G3/2074 , G09G2300/0809 , G09G2310/066 , G09G2320/0242 , G09G2320/0653 , G09G2320/0686 , G09G2330/023
Abstract: A display apparatus includes a multiplicity of picture elements for emitting visible light in different colors in an adjustable manner by means of a plurality of semiconductor layer sequences. Each of the picture elements has a plurality of types of pixels and each type of pixels is configured for emitting light of a specific color. The pixels are each subdivided into a plurality of sub-pixel. All the sub-pixels are configured for emitting light of the same color out of the display apparatus without further color change. At least two sub-pixels within each pixel have emission areas of different sizes. An electrical control unit is assigned to each pixel. The control units are each configured to automatically control the sub-pixels of a relevant pixel depending on an energization intensity in such a way that a light-emitting area of the relevant pixel increases in stepped fashion with the energization intensity.
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37.
公开(公告)号:US11757254B2
公开(公告)日:2023-09-12
申请号:US16989028
申请日:2020-08-10
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Peter Fuchs , Ann Russell , Thomas Falck , Hubert Halbritter , Bruno Jentzsch , Christian Lauer
CPC classification number: H01S5/18361 , H01S3/10061 , H01S5/0281 , H01S5/18397
Abstract: An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.
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公开(公告)号:US11756479B2
公开(公告)日:2023-09-12
申请号:US17434320
申请日:2020-02-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: Thorsten Frank Baumheinrich , Hubert Halbritter
CPC classification number: G09G3/32 , G09G3/2011 , G09G3/2014 , G09G2300/0842 , G09G2310/0221 , G09G2310/0251
Abstract: A display device includes pixels-arranged in an array with rows and columns, column lines, each connected to the pixels of one of the columns, row lines, each connected to the pixels of one of the rows, and a control unit connected to the column lines and the row lines. The control unit is configured to generate a column pulse for a selected one of the column lines and generate a data signal for a selected row line from the row lines. The data signal includes a set pulse which, when the pixel is set to a radiating state, is applied at least in part to the pixel connected to the selected column and row line when the column pulse is applied to the pixel, and drives the pixel such that a light emission of the pixel depends on the time offset between the column pulse and the set pulse.
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公开(公告)号:US11749776B2
公开(公告)日:2023-09-05
申请号:US17552657
申请日:2021-12-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Karl Weidner , Ralph Wirth , Axel Kaltenbacher , Walter Wegleiter , Bernd Barchmann , Oliver Wutz , Jan Marfeld
IPC: H01L33/00 , H01L33/48 , H01L33/62 , H01L25/075 , H01L23/31 , H01L31/0232 , H01L33/60 , H01L31/0203 , H01L33/56 , H01L25/04 , H01L31/02 , H01L33/50 , H01L31/18 , H01L33/54
CPC classification number: H01L33/0093 , H01L23/3107 , H01L23/3185 , H01L25/042 , H01L25/0753 , H01L31/0203 , H01L31/02005 , H01L31/0232 , H01L31/02322 , H01L31/02327 , H01L31/1892 , H01L33/483 , H01L33/486 , H01L33/502 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/54 , H01L2924/0002 , H01L2933/005 , H01L2933/0033 , H01L2933/0066 , H01L2924/0002 , H01L2924/00
Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.
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公开(公告)号:US11692133B2
公开(公告)日:2023-07-04
申请号:US17643702
申请日:2021-12-10
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Darshan Kundaliya , Jeffery J. Serre , James Avallon , Kathleen A. Lawson
CPC classification number: C09K11/0822 , C01F17/34 , H01L21/02538 , H01L33/26 , C01P2002/20 , C01P2002/54 , C01P2004/03 , C01P2004/61
Abstract: In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises Al2O3 single crystals, and wherein the conversion element comprises at least one groove.
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