公开(公告)号：US08546244B2

公开(公告)日：2013-10-01

申请号：US13346716

申请日：2012-01-09

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Toshihide Uematsu ,  Haruo Shimamoto

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Toshihide Uematsu ,  Haruo Shimamoto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3121 ,  H01L23/544 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05554 ,  H01L2224/0557 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06558 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01032 ,  H01L2924/3512

摘要： A method includes the steps of: (a) fixing a front surface of a wafer (semiconductor wafer) having the front surface, a plurality of chip regions formed on the front surface, a dicing region formed between the chip regions, and a rear surface opposite to the front surface to the supporting member; (b) in a state of having the wafer fixed to the supporting member, grinding the rear surface of the wafer to expose the rear surface; (c) in a state of having the wafer fixed to the supporting member, dividing the wafer into the chip regions; (d) etching side surfaces of the chip regions to remove crushed layers formed in the step (c) on the side surfaces and obtain a plurality of semiconductor chips. After the steps (e) and (d), the plurality of divided chip regions are peeled off from the supporting member to obtain a plurality of semiconductor chips.

摘要翻译： 一种方法包括以下步骤：（a）固定具有前表面的晶片（半导体晶片）的前表面，形成在前表面上的多个芯片区域，形成在芯片区域之间的切割区域和后表面 与支撑构件的前表面相对; （b）在将晶片固定在支撑构件上的状态下，研磨晶片的后表面以暴露后表面; （c）在将晶片固定在支撑部件上的状态下，将晶片分割成芯片区域; （d）蚀刻芯片区域的侧表面以去除侧表面上的步骤（c）中形成的破碎层，并获得多个半导体芯片。 在步骤（e）和（d）之后，将多个分割的芯片区域从支撑构件剥离以获得多个半导体芯片。

公开(公告)号：US08378459B2

公开(公告)日：2013-02-19

申请号：US12795950

申请日：2010-06-08

申请人： Yasuhiro Naka ,  Naotaka Tanaka ,  Toshihide Uematsu ,  Chuichi Miyazaki ,  Kazunari Suzuki ,  Yasuyuki Nakajima ,  Yoshiyuki Abe ,  Kenji Kohzu ,  Kosuke Kitaichi ,  Shinya Ogane

发明人： Yasuhiro Naka ,  Naotaka Tanaka ,  Toshihide Uematsu ,  Chuichi Miyazaki ,  Kazunari Suzuki ,  Yasuyuki Nakajima ,  Yoshiyuki Abe ,  Kenji Kohzu ,  Kosuke Kitaichi ,  Shinya Ogane

IPC分类号： H01L23/544

CPC分类号： H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/06102 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01064 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10158 ,  H01L2924/1306 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00014

摘要： In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.

摘要翻译： 在粘合带附着到半导体晶片的主表面上的状态下，在半导体晶片的后表面上形成沟槽。 为了在半导体晶片的后表面中形成沟槽，在半导体晶片的后表面上涂覆抗蚀剂膜之后，通过使用光刻技术对抗蚀剂膜进行构图。 进行抗蚀剂膜的图案化，以便不在要形成沟槽的区域中留下抗蚀剂膜。 然后，通过使用图案化的抗蚀剂膜作为掩模的干蚀刻技术，在半导体晶片的预定区域中形成沟槽。 具体地说，在切割线附近的区域形成沟槽。

公开(公告)号：US07265035B2

公开(公告)日：2007-09-04

申请号：US10503972

申请日：2003-03-10

申请人： Hiroshi Honma ,  Noriyuki Ooroku ,  Hitoshi Odashima ,  Toru Mita ,  Chuichi Miyazaki ,  Takashi Wada

发明人： Hiroshi Honma ,  Noriyuki Ooroku ,  Hitoshi Odashima ,  Toru Mita ,  Chuichi Miyazaki ,  Takashi Wada

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68322 ,  H01L2221/68327

摘要： To improve the reliability and yield of a thin-type semiconductor device as used for a stack-type flash memory, the semiconductor device is manufactured by upheaving each of semiconductor chips (semiconductor devices) obtained by dicing a semiconductor wafer on an adhesive sheet from a backside via the adhesive sheet using an upthrow jig to which ultrasonic vibration is applied so as not to break through the adhesive sheet, and by picking up each semiconductor chip.

摘要翻译： 为了提高堆叠式闪速存储器所使用的薄型半导体器件的可靠性和产量，半导体器件通过使由半导体晶片从粘合片上切割得到的半导体芯片（半导体器件）从 通过使用施加了超声波振动的上推夹具，通过粘合片的背面，不会突破粘合片，并且拾取每个半导体芯片。

公开(公告)号：US07148081B2

公开(公告)日：2006-12-12

申请号：US10855382

申请日：2004-05-28

申请人： Tomoko Higashino ,  Kazunari Suzuki ,  Chuichi Miyazaki

发明人： Tomoko Higashino ,  Kazunari Suzuki ,  Chuichi Miyazaki

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L23/52 ,  H01L23/48 ,  H01L27/146

CPC分类号： H01L21/6835 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L29/0657 ,  H01L2224/05554 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/10155 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： In a semiconductor device in which a plurality of semiconductor chips are stacked on a mounting substrate, an adhesive material formed of resin mainly having a thermosetting property is applied to a semiconductor chip mounting region on the mounting substrate. After mounting semiconductor chips on the adhesive material, the adhesive material is cured by heat treatment. When these parts are naturally cooled to a normal temperature, the mounting substrate warps in a convex shape due to the difference in an α value between the mounting substrate and the semiconductor chip. However, pads are connected by wire bonding and, an adhesive material formed of resin having a thermoplastic property is laminated to the semiconductor chip. Then, a spacer chip is bonded to the adhesive material by thermal compression bonding. Accordingly, due to heat generated at the time of thermal compression bonding, the mounting substrate and the semiconductor chip become substantially flat.

摘要翻译： 在多个半导体芯片堆叠在安装基板上的半导体器件中，由主要具有热固性的树脂形成的粘合材料被施加到安装基板上的半导体芯片安装区域。 将半导体芯片安装在粘合剂材料上之后，通过热处理固化粘合剂材料。 当这些部件自然冷却至常温时，由于安装基板和半导体芯片之间的α值的差异，安装基板会翘曲成凸形。 然而，焊盘通过引线接合连接，并且由具有热塑性的树脂形成的粘合剂材料层压到半导体芯片。 然后，通过热压接将间隔片结合到粘合剂材料上。 因此，由于热压接时产生的热量，安装基板和半导体芯片变得基本平坦。

公开(公告)号：US06916686B2

公开(公告)日：2005-07-12

申请号：US10342238

申请日：2003-01-15

申请人： Takashi Wada ,  Kazunari Suzuki ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki ,  Tomoko Higashino

发明人： Takashi Wada ,  Kazunari Suzuki ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki ,  Tomoko Higashino

IPC分类号： H01L23/29 ,  H01L21/52 ,  H01L23/12 ,  H01L23/31 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/3164 ,  H01L23/5387 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/75 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68336 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A contact collect is provided to prevent damage to the top surface of a semiconductor chip at the time of die bonding the semiconductor chip. A protection tape is pasted to the top surface of the semiconductor chip before die bonding of the semiconductor chip is executed by pressing the back surface (underside) of the semiconductor chip sucked and securely held by the contact collect against respective chip-mounting regions of a multi-wiring board. The contact collect is, for example, substantially cylidrical in outside shape, and a bottom part (suction head) thereof is made of soft synthetic rubber, etc. The protection tape pasted to the top surface of the semiconductor chip prevents the top surface of the semiconductor chip from directly contacting with the contact collect even at the time of vacuum suction by pressing the suction head of the contact collect against the top surface of the semiconductor chip.

摘要翻译： 提供接触收集以防止在半导体芯片的芯片接合时损坏半导体芯片的顶表面。 将半导体芯片的裸片接合之前，通过将被触点收集并牢固地保持的半导体芯片的背面（下侧）按压到相应的芯片安装区域，将保护带粘贴到半导体芯片的顶表面 多线路板 接触收集体例如是外形大致圆形，其底部（吸头）由软质合成橡胶等构成。粘贴在半导体芯片的上表面的保护带防止了 即使在真空抽吸时，通过按压接触器的吸头将半导体芯片与接触件直接接触收集，也抵抗半导体芯片的顶表面收集。

公开(公告)号：US07892949B2

公开(公告)日：2011-02-22

申请号：US12092850

申请日：2006-11-09

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

IPC分类号： H01L21/00

CPC分类号： H01L22/32 ,  B23K26/0006 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L22/12 ,  H01L22/34 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/065 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2223/5448 ,  H01L2224/02235 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

公开(公告)号：US07514294B2

公开(公告)日：2009-04-07

申请号：US11500945

申请日：2006-08-09

申请人： Tomoko Higashino ,  Chuichi Miyazaki ,  Yoshiyuki Abe

发明人： Tomoko Higashino ,  Chuichi Miyazaki ,  Yoshiyuki Abe

IPC分类号： H01L21/00

CPC分类号： H01L21/82 ,  H01L21/563 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/6834 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83444 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01022 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/45015 ,  H01L2924/207

摘要： The semiconductor device having the structure which laminated the chip in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of an other semiconductor chip by the adhesive layer of the back surface, the semiconductor device having the structure for which the semiconductor chip was laminated by many stages is manufactured.

摘要翻译： 具有将芯片多层叠的结构的半导体器件变薄。 通过照射激光束形成重整区域，其中聚光点与半导体晶片的半导体衬底的内部放置在一起。 然后，通过旋涂法将液态状态的粘结材料涂布在半导体晶片的背面后，干燥，形成固体状粘接剂层。 然后，通过使上述重整区域成为分割原点，将半导体晶片分割成各半导体芯片。 通过利用后表面的粘合剂层将半导体芯片粘贴在另一半导体芯片的主表面上，制造了半导体芯片被层叠多级的结构的半导体器件。

公开(公告)号：US20080286948A1

公开(公告)日：2008-11-20

申请号：US12170020

申请日：2008-07-09

申请人： Chuichi Miyazaki ,  Yoshiyuki Abe ,  Toshihide Uematsu ,  Minoru Kimura ,  Kazunari Suzuki ,  Masao Odagiri ,  Hideyuki Suga ,  Manabu Takata

发明人： Chuichi Miyazaki ,  Yoshiyuki Abe ,  Toshihide Uematsu ,  Minoru Kimura ,  Kazunari Suzuki ,  Masao Odagiri ,  Hideyuki Suga ,  Manabu Takata

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/30625 ,  H01L21/314 ,  H01L21/31654 ,  H01L21/31675 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

摘要： A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.

摘要翻译： 一种能够从切割带稳定地释放芯片的技术包括：将压敏粘合带粘附到形成有集成电路的半导体晶片的电路形成表面上，研磨半导体晶片的背面，以实现预定厚度， 强制氧化半导体晶片的背面。 然后，剥离粘附到半导体晶片的电路形成表面的压敏粘合带，并将切割带粘附到半导体晶片的背面。 此外，通过将半导体晶片切割成单独的芯片来分割半导体晶片，然后通过切割带对芯片的背面进行压制，从而从切割带释放芯片。

公开(公告)号：US20080251897A1

公开(公告)日：2008-10-16

申请号：US11851982

申请日：2007-09-07

申请人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

发明人： Takashi Kikuchi ,  Koichi Kanemoto ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki

IPC分类号： H01L23/49

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/49575 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49174 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85181 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2224/29099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The reliability of the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via the insulating film which has adhesive property is improved.In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.

摘要翻译： 通过经由具有粘合性的绝缘膜积聚的状态，具有存储在同一密封体中平面尺寸不同的多个半导体芯片的结构的半导体器件的可靠性得到改善。 在具有这样的结构的半导体器件中，其结构是在通过DAF积聚的状态下，在相同的密封体中存储有多个平面尺寸不同的半导体芯片的半导体器件，最上半导体芯片的背面的DAF的厚度与 控制电路的形成比形成有存储电路的下层半导体芯片的背面的DAF的厚度大。 因此，可以减少连接最上半导体芯片和布线基板的接合线与下层半导体芯片的主表面角部接触的缺陷。

公开(公告)号：US20070141752A1

公开(公告)日：2007-06-21

申请号：US11610764

申请日：2006-12-14

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki

IPC分类号： H01L21/00 ,  H01L21/461

CPC分类号： H01L21/304 ,  H01L21/3221 ,  H01L21/78

摘要： The lowering of the manufacturing yield of semiconductor products resulting from the contamination impurities from the back surface of a semiconductor wafer is suppressed. When making thin semiconductor wafer 1, the first crushing layer formed by grinding the back surface of semiconductor wafer 1 with the first and second abrasive which has fixed abrasive is removed. Thereby, the die strength after dividing or mostly dividing semiconductor wafer 1 and making a chip is secured. Then, from the back surface side of semiconductor wafer 1, laser beam 16 is irradiated in the predetermined region of the predetermined depth from the back surface of semiconductor wafer 1, and for example, second crushing layer 15 with the gettering function of less than 1.0 μm, less than 0.5 μm, or less than 0.1 μm in thickness is formed newly.

摘要翻译： 抑制了从半导体晶片的背面杂质污染导致的半导体产品的制造成品率的下降。 当制造薄的半导体晶片1时，通过用具有固定的研磨剂的第一和第二研磨剂研磨半导体晶片1的背面形成的第一破碎层被去除。 由此，确保了在分割或大部分分割半导体晶片1并制造芯片之后的模具强度。 然后，从半导体晶片1的背面侧将激光束16从半导体晶片1的背面预定深度的预定区域照射，例如，吸附功能小于1.0的第二破碎层15 新近形成了小于0.5μm或小于0.1μm的母体。