公开(公告)号：US20190198483A1

公开(公告)日：2019-06-27

申请号：US15935069

申请日：2018-03-26

Applicant: Industrial Technology Research Institute ,  Macroblock, Inc.

Inventor： Po-Hsun Wang ,  Chia-Hsin Chao ,  Ming-Hsien Wu ,  Yen-Hsiang Fang ,  Chien-Chung Lin ,  Ming-Jer Kao ,  Feng-Pin Chang

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/54 ,  H01L23/538

Abstract: A display device including a circuit substrate, a plurality of pixels, and a light-shielding layer is provided. The pixels include a plurality of light-emitting elements. The light-emitting elements are disposed on the circuit substrate and are electrically connected to the circuit substrate. The light-emitting elements in the pixels are arranged along an arrangement direction. The light-shielding layer is disposed on the circuit substrate and has a plurality of pixel apertures. The pixels are disposed in a corresponding pixel aperture. The light-shielding layer includes a plurality of first light-shielding patterns extending in the arrangement direction and a plurality of second light-shielding patterns connected to the first light-shielding patterns. The extending direction of the second light-shielding patterns is different from the extending direction of the first light-shielding patterns. A thickness of the first light-shielding patterns is greater than or substantially equal to a thickness of the second light-shielding patterns.

公开(公告)号：US09977192B2

公开(公告)日：2018-05-22

申请号：US15222961

申请日：2016-07-29

Applicant: Industrial Technology Research Institute

Inventor： Chia-Hsin Chao ,  Yen-Hsiang Fang ,  Chun-Hsing Lee ,  Kai-Ning Ku

IPC: H01J40/14 ,  G02B6/34 ,  G02B6/42 ,  G02B6/12 ,  G02B6/30 ,  H01S5/042 ,  H01S5/12 ,  H05K3/30 ,  G01J1/04 ,  G01J1/02 ,  H04B10/079

CPC classification number: G02B6/34 ,  G01J1/0209 ,  G01J1/0407 ,  G01J1/0422 ,  G02B6/12004 ,  G02B6/305 ,  G02B6/4206 ,  G02B6/4214 ,  G02B6/4298 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/0425 ,  H01S5/12 ,  H04B10/079 ,  H05K3/30 ,  H05K2203/0147 ,  H05K2203/163

Abstract: An optical receiver including a photodetector and a waveguide is provided. The photodetector includes a plurality of photosensitive regions arranged in an array. The waveguide is disposed on the photodetector and includes a plurality of gratings, a plurality of optical channels, and a plurality of light-deflection elements. The gratings are respectively adapted to collect light beams incident on the waveguide at different angles. The optical channels are adapted to propagate the light beams collected by the gratings. The light-deflection elements are disposed on transmission paths of the light beams propagating in the optical channels and are located above the photosensitive regions. The light-deflection elements are adapted to propagate the light beams propagating in the optical channels to the photosensitive regions. An optical transceiver is also provided.

公开(公告)号：US20180108284A1

公开(公告)日：2018-04-19

申请号：US15372409

申请日：2016-12-08

Applicant: Industrial Technology Research Institute

Inventor： Ying-Chien Chu ,  Yen-Hsiang Fang ,  Chia-Hsin Chao ,  Ming-Hsien Wu ,  Shih-Hao Wang

IPC: G09G3/00 ,  G09G3/34 ,  G09G3/36 ,  G02F1/1343 ,  G06T19/00 ,  G02F1/137 ,  G02B27/01

CPC classification number: G09G3/003 ,  G02B27/01 ,  G02B27/0101 ,  G02B27/017 ,  G02B2027/0127 ,  G02B2027/0134 ,  G02F1/134309 ,  G02F1/137 ,  G02F1/29 ,  G02F2001/294 ,  G06T19/006 ,  G06T2219/004 ,  G09G3/3413 ,  G09G3/342 ,  G09G3/36 ,  G09G2300/0426 ,  G09G2380/10

Abstract: A three-dimensional display module includes a substrate, a display layer, a first electrode layer, a liquid-crystal layer, a second electrode layer, and a drive unit. The substrate has first electrodes and second electrodes. The display layer is disposed on the substrate and includes light-emitting elements. The first electrode layer is disposed on the display layer. The liquid-crystal layer is disposed on the display layer. The second electrode layer is disposed on the liquid-crystal layer. The drive unit drives the first electrodes and the first electrode layer to supply power to the light-emitting elements, such that the light-emitting elements generate light passing through the liquid-crystal layer to form a display image. The drive unit drives the second electrodes and the second electrode layer to produce an electric field on the liquid-crystal layer to change focal length of the liquid-crystal layer so as to control depth of field of the display image.

公开(公告)号：US20170149498A1

公开(公告)日：2017-05-25

申请号：US14975864

申请日：2015-12-21

Applicant: Industrial Technology Research Institute

Inventor： Chia-Hsin Chao ,  Yen-Hsiang Fang ,  Ming-Hsien Wu

IPC: H04B10/116 ,  H05B33/08

CPC classification number: H04B10/116 ,  H05B33/0845

Abstract: A driving method of a light emitting device including visible light emitting elements is provided. In a first visible light communication mode, a first portion of the visible light emitting elements is driven and a second portion of the visible light emitting elements is idled for the first portion of the visible light emitting elements having a first current density. In a second visible light communication mode, each of the visible light emitting elements is driven so as to have a second current density. An illumination brightness difference of the light emitting device between the first visible light communication mode and the second visible light communication mode is smaller than 15%.

公开(公告)号：US20170148650A1

公开(公告)日：2017-05-25

申请号：US15428156

申请日：2017-02-09

Applicant: Industrial Technology Research Institute ,  PlayNitride Inc.

Inventor： Ming-Hsien Wu ,  Yen-Hsiang Fang ,  Chia-Hsin Chao

IPC: H01L21/67 ,  H01L21/683 ,  H01L33/62 ,  H01L33/00 ,  H01L21/66

CPC classification number: H01L21/67144 ,  G01R31/2635 ,  H01L21/6835 ,  H01L22/20 ,  H01L22/22 ,  H01L24/75 ,  H01L24/81 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/12 ,  H01L33/62 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2224/75 ,  H01L2933/0066

Abstract: An electric-programmable magnetic module comprising a micro electro mechanical system (MEMS) chip and a bonding equipment is provided. The MEMS chip comprises a plurality of electromagnetic coils and each of the electromagnetic coils is individually controlled. The MEMS chip is assembled with and carried by the bonding equipment.

公开(公告)号：US09171779B2

公开(公告)日：2015-10-27

申请号：US14472400

申请日：2014-08-29

Applicant: Industrial Technology Research Institute

Inventor： Jui-Ying Lin ,  Yen-Hsiang Fang ,  Chia-Hsin Chao ,  Yao-Jun Tsai ,  Yi-Chen Lin

IPC: H01S5/024 ,  H01L23/48 ,  H01L21/306 ,  H01L27/02 ,  H01L33/20 ,  H01L33/62 ,  H01L21/768 ,  H01L23/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/34 ,  G02B6/12 ,  G02B6/34 ,  H01L29/861

CPC classification number: H01L23/481 ,  G02B6/12 ,  G02B6/34 ,  G02B2006/12061 ,  H01L21/30604 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L25/167 ,  H01L27/0255 ,  H01L29/861 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/08148 ,  H01L2224/08238 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/29294 ,  H01L2224/32148 ,  H01L2224/32238 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48148 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/80801 ,  H01L2224/80805 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83805 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2933/0066 ,  H01S5/0208 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/34 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract translation: 提供半导体激光器结构。 半导体激光器包括中心热分流器，环形硅波导，连续热分流器，粘合剂层和激光元件。 中心热分流器位于具有围绕中心热分流的掩埋氧化物层的SOI衬底上。 环形硅波导位于掩埋氧化层上并围绕中心热分流。 环形硅波导包括p型材料部分的P-N结，n型材料部分和其间的耗尽区域。 连续的热分流器覆盖一部分掩埋的氧化物层并且环绕着环形硅波导。 粘合剂层覆盖环形硅波导和掩埋氧化物层。 激光元件覆盖中心热分流器，粘合剂层和相邻热分流器。

公开(公告)号：US20150063386A1

公开(公告)日：2015-03-05

申请号：US14472400

申请日：2014-08-29

Applicant: Industrial Technology Research Institute

Inventor： Jui-Ying Lin ,  Yen-Hsiang Fang ,  Chia-Hsin Chao ,  Yao-Jun Tsai ,  Yi-Chen Lin

IPC: H01S5/024 ,  H01S5/02 ,  H01S5/34 ,  H01S5/026

CPC classification number: H01L23/481 ,  G02B6/12 ,  G02B6/34 ,  G02B2006/12061 ,  H01L21/30604 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L25/167 ,  H01L27/0255 ,  H01L29/861 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/08148 ,  H01L2224/08238 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/29294 ,  H01L2224/32148 ,  H01L2224/32238 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48148 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/80801 ,  H01L2224/80805 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83805 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2933/0066 ,  H01S5/0208 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/34 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract translation: 提供半导体激光器结构。 半导体激光器包括中心热分流器，环形硅波导，连续热分流器，粘合剂层和激光元件。 中心热分流器位于具有围绕中心热分流的掩埋氧化物层的SOI衬底上。 环形硅波导位于掩埋氧化层上并围绕中心热分流。 环形硅波导包括p型材料部分的P-N结，n型材料部分和其间的耗尽区域。 连续的热分流器覆盖一部分掩埋的氧化物层并且环绕着环形硅波导。 粘合剂层覆盖环形硅波导和掩埋氧化物层。 激光元件覆盖中心热分流器，粘合剂层和相邻热分流器。

公开(公告)号：US12199215B2

公开(公告)日：2025-01-14

申请号：US17113114

申请日：2020-12-07

Applicant: Industrial Technology Research Institute

Inventor： Yih-Der Guo ,  Ming-Hsien Wu ,  Yi-Chen Lin ,  Yao-Jun Tsai ,  Yen-Hsiang Fang

IPC: H01L33/22 ,  H01L27/15 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62

Abstract: A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.

公开(公告)号：US11163121B2

公开(公告)日：2021-11-02

申请号：US16430447

申请日：2019-06-04

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Yen-Hsiang Fang ,  Shih-Hao Wang ,  Yi-Chen Lin

IPC: H05K3/30 ,  G02B6/34 ,  G02B6/42 ,  G01J1/04 ,  G01J1/02 ,  G02B6/12 ,  G02B6/30 ,  H01S5/12 ,  H04B10/079

Abstract: A detection method for electronic devices including steps as follows is provided. The detection method includes: providing an electronic device substrate; attaching a portion of electronic devices of the electronic device substrate through an electronic device transfer module, wherein the electronic device transfer module includes a plurality of detecting elements corresponding to the portion of the electronic devices, and each of the detecting elements includes at least one pair of electrodes; detecting whether a conducting path between the at least one pair of electrodes is generated or not to confirm a status of contact between the portion of the electronic devices and a contact target; and transferring the portion of the electronic devices attached to the electronic device transfer module to a target substrate. An electronic device transfer module having detecting elements is also provided.

公开(公告)号：US20210057611A1

公开(公告)日：2021-02-25

申请号：US16726271

申请日：2019-12-24

Applicant: Industrial Technology Research Institute

Inventor： Yih-Der Guo ,  Ming-Hsien Wu ,  Yi-Chen Lin ,  Yao-Jun Tsai ,  Yen-Hsiang Fang

IPC: H01L33/38 ,  H01L33/62 ,  H01L25/075

Abstract: A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.