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    Composition for photo imaging
    36.
    发明授权
    Composition for photo imaging 失效

    公开(公告)号：US5304457A

    公开(公告)日：1994-04-19

    申请号：US956836

    申请日：1992-10-05

    申请人： Richard A. Day ,  Jeffrey D. Gelorme ,  David J. Russell ,  Stephen J. Witt

    发明人： Richard A. Day ,  Jeffrey D. Gelorme ,  David J. Russell ,  Stephen J. Witt

    IPC分类号： G03C1/725

    CPC分类号： G03C1/725

    摘要： An improved photoimagable cationically polymerizable epoxy based coating material is provided. The material includes an epoxy resin system consisting essentially of between about 10% and about 80% by weight of a polyol resin which is a condensation product of epichlorohydrin and bisphenol A having a molecular weight of between about 40,000 and 130,000; between about 20% and about 90% by weight of an epoxidized octafunctional bisphenol A formaldehyde novolak resin having a molecular weight of 4,000 to 10,000; and if flame retardancy is required between about 35% and 50% by weight of an epoxidized glycidyl ether of tetrabromo bisphenol A having a softening point of between about 60.degree. C. and about 110.degree. C. and a molecular weight of between about 600 and 2,500. To this resin system is added about 0.1 to about 15 parts by weight per 100 parts of resin of a cationic photoinitiator capable of initiating polymerization of said epoxidized resin system upon exposure to actinic radiation; the system being further characterized by having an absorbance of light in the 330 to 700 nm region of less than 0.1 for a 2.0 mil thick film. Optionally a photosensitizer such as perylene and its derivatives or anthracene and its derivatives may be added.

    Underbump metallurgy employing an electrolytic Cu / electorlytic Ni / electrolytic Cu stack
    37.
    发明授权
    Underbump metallurgy employing an electrolytic Cu / electorlytic Ni / electrolytic Cu stack 有权
    使用电解Cu /电解Ni /电解铜叠层的底部衬底冶金

    公开(公告)号：US08587112B2

    公开(公告)日：2013-11-19

    申请号：US13453074

    申请日：2012-04-23

    申请人： Charles L. Arvin ,  Hai P. Longworth ,  David J. Russell ,  Krystyna W. Semkow

    发明人： Charles L. Arvin ,  Hai P. Longworth ,  David J. Russell ,  Krystyna W. Semkow

    IPC分类号： H05K3/00

    CPC分类号： H01L23/49811 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K3/108 ,  H05K3/24 ,  H05K3/243 ,  H05K3/421 ,  H05K3/4644 ,  H05K2201/0341 ,  H05K2201/0769 ,  H05K2201/09481 ,  H05K2201/09563 ,  H01L2924/00

    摘要： An electroless Cu layer is formed on each side of a packaging substrate containing a core, at least one front metal interconnect layer, and at least one backside metal interconnect layer. A photoresist is applied on both electroless Cu layers and lithographically patterned. First electrolytic Cu portions are formed on exposed surfaces of the electroless Cu layers, followed by formation of electrolytic Ni portions and second electrolytic Cu portions. The electrolytic Ni portions provide enhanced resistance to electromigration, while the second electrolytic Cu portions provide an adhesion layer for a solder mask and serves as an oxidation protection layer. Some of the first electrolytic Cu may be masked by lithographic means to block formation of electrolytic Ni portions and second electrolytic Cu portions thereupon as needed. Optionally, the electrolytic Ni portions may be formed directly on electroless Cu layers.

    摘要翻译： 在包含芯，至少一个前金属互连层和至少一个背侧金属互连层的封装基板的每一侧上形成化学镀铜层。 在两个无电镀铜层上涂布光致抗蚀剂，并用光刻图案化。 第一电解Cu部分形成在无电解Cu层的暴露表面上，随后形成电解Ni部分和第二电解Cu部分。 电解Ni部分提供增强的电迁移阻力，而第二电解Cu部分提供用于焊接掩模的粘附层并且用作氧化保护层。 一些第一电解铜可以被光刻装置掩盖，以根据需要阻挡电解Ni部分和第二电解Cu部分的形成。 任选地，电解Ni部分可以直接形成在无电镀Cu层上。