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    Varying thickness inductor
    31.
    发明授权
    Varying thickness inductor 有权
    不同厚度的电感

    公开(公告)号：US09449753B2

    公开(公告)日：2016-09-20

    申请号：US14155244

    申请日：2014-01-14

    Applicant: QUALCOMM Incorporated

    Inventor： Daeik Daniel Kim ,  Chengjie Zuo ,  Changhan Hobie Yun ,  Mario Francisco Velez ,  Robert Paul Mikulka ,  Xiangdong Zhang ,  Jonghae Kim ,  Je-Hsiung Lan

    IPC: H01F5/00 ,  H01F27/29 ,  H01F27/30 ,  H01F27/28 ,  H01F41/04 ,  H01F17/00

    CPC classification number: H01F41/041 ,  H01F17/0013 ,  H01F27/2804 ,  H01F41/042 ,  H01F2017/0053 ,  H01F2017/0073 ,  H01F2027/2809

    Abstract: A particular device includes a substrate and a spiral inductor coupled to the substrate. The spiral inductor includes a first conductive spiral and a second conductive spiral overlaying the first conductive spiral. A first portion of an innermost turn of the spiral inductor has a first thickness in a direction perpendicular to the substrate. The first portion of the innermost turn includes a first portion of the first conductive spiral and does not include the second conductive spiral. A second portion of the innermost turn includes a first portion of the second conductive spiral. A portion of an outermost turn of the spiral inductor has a second thickness in the direction perpendicular to the substrate that is greater than the first thickness. A portion of the outermost turn includes a second portion of the first conductive spiral and a second portion of the second conductive spiral.

    Abstract translation: 特定器件包括衬底和耦合到衬底的螺旋电感器。 螺旋电感器包括覆盖第一导电螺旋的第一导电螺旋和第二导电螺旋。 螺旋电感器的最内圈的第一部分在垂直于衬底的方向上具有第一厚度。 最内圈的第一部分包括第一导电螺旋的第一部分，并且不包括第二导电螺旋。 最内圈的第二部分包括第二导电螺旋的第一部分。 螺旋电感器的最外圈的一部分在垂直于衬底的方向上具有大于第一厚度的第二厚度。 最外圈的一部分包括第一导电螺旋的第二部分和第二导电螺旋的第二部分。

    Hybrid transformer structure on semiconductor devices
    32.
    发明授权
    Hybrid transformer structure on semiconductor devices 有权
    半导体器件上的混合变压器结构

    公开(公告)号：US09431473B2

    公开(公告)日：2016-08-30

    申请号：US13684103

    申请日：2012-11-21

    Applicant: Qualcomm Incorporated

    Inventor： Chi Shun Lo ,  Je-Hsiung Lan ,  Mario Francisco Velez ,  Jonghae Kim

    IPC: H01L27/08 ,  H01L21/337 ,  H01F27/30 ,  H01L49/02 ,  H01F21/00 ,  H01F19/04 ,  H01L23/522 ,  H01L23/64 ,  H01F19/08 ,  H01F27/28

    CPC classification number: H01L28/10 ,  H01F19/04 ,  H01F21/00 ,  H01F2019/085 ,  H01F2027/2809 ,  H01L21/00 ,  H01L23/5227 ,  H01L23/645 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

    Abstract: Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.

    Abstract translation: 几种新颖的特征涉及形成在具有多层的半导体管芯内的混合变压器。 混合变压器包括位于模具的第一层上的第一组绕组。 第一层位于模具的基底之上。 第一组绕组包括第一端口和第二端口。 第一组绕组被布置成作为第一电感器工作。 混合变压器包括位于模具的第二层上的第二组绕组。 第二层位于衬底上方。 第二组绕组包括第三端口，第四端口和第五端口。 第二组绕组被布置成用作第二电感器和第三电感器。 第一组绕组和第二组绕组被布置成作为垂直耦合混合变压器工作。

    INTEGRATED PASSIVE DEVICE (IPD) ON SUBTRATE
    39.
    发明申请
    INTEGRATED PASSIVE DEVICE (IPD) ON SUBTRATE 有权
    集成无源设备（IPD）

    公开(公告)号：US20150048480A1

    公开(公告)日：2015-02-19

    申请号：US13968627

    申请日：2013-08-16

    Applicant: QUALCOMM Incorporated

    Inventor： Daeik Daniel Kim ,  Young Kyu Song ,  Changhan Hobie Yun ,  Mario Francisco Velez ,  Chengjie Zuo ,  Jonghae Kim ,  Xiaonan Zhang ,  Ryan David Lane

    IPC: H01L23/498 ,  H01L21/768 ,  H01L49/02

    CPC classification number: H01L23/49827 ,  H01L21/76885 ,  H01L23/49816 ,  H01L23/50 ,  H01L23/5222 ,  H01L23/642 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2224/16225 ,  H01L2225/06572 ,  H01L2924/19105

    Abstract: Some novel features pertain to a semiconductor device that includes a substrate, a first cavity that traverses the substrate. The first cavity is configured to be occupied by a interconnect material (e.g., solder ball). The substrate also includes a first metal layer coupled to a first side wall of the first cavity. The substrate further includes a first integrated passive device (IPD) on a first surface of the substrate, the first IPD coupled to the first metal layer. In some implementations, the substrate is a glass substrate. In some implementations, the first IPD is one of at least a capacitor, an inductor and/or a resistor. In some implementations, the semiconductor device further includes a second integrated passive device (IPD) on a second surface of the substrate. The second IPD is coupled to the first metal layer.

    Abstract translation: 一些新颖的特征涉及一种半导体器件，其包括衬底，穿过衬底的第一腔体。 第一腔被配置为被互连材料（例如，焊球）占据。 衬底还包括耦合到第一腔的第一侧壁的第一金属层。 衬底还包括在衬底的第一表面上的第一集成无源器件（IPD），第一IPD耦合到第一金属层。 在一些实施方案中，基底是玻璃基底。 在一些实现中，第一IPD是至少一个电容器，电感器和/或电阻器中的一个。 在一些实施方式中，半导体器件还包括在衬底的第二表面上的第二集成无源器件（IPD）。 第二IPD耦合到第一金属层。

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