公开(公告)号：US11767448B2

公开(公告)日：2023-09-26

申请号：US16981589

申请日：2019-03-20

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Takaaki Matsumoto ,  Tomohiro Iwano ,  Tomoyasu Hasegawa ,  Tomomi Kukita

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/3105 ,  B24B37/04 ,  C09K13/06 ,  B24B1/00 ,  C09G1/06 ,  H01L21/306 ,  C09K3/14 ,  C09G1/04 ,  C09G1/00 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/14 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: A polishing liquid containing: abrasive grains; a hydroxy acid; a polymer compound having at least one selected from the group consisting of a hydroxyl group and an amide group; and a liquid medium, in which a zeta potential of the abrasive grains is positive, and a weight average molecular weight of the polymer compound is 3000 or more.

公开(公告)号：US11732366B2

公开(公告)日：2023-08-22

申请号：US16077976

申请日：2017-02-15

Applicant: REM TECHNOLOGIES, INC.

Inventor： Agustin Diaz ,  Gary J. Sroka

IPC: C23F1/14 ,  C23F3/00 ,  B33Y40/20 ,  C09G1/02 ,  C09K3/14 ,  B23H9/00 ,  B33Y80/00

CPC classification number: C23F3/00 ,  B33Y40/20 ,  C09G1/02 ,  C09K3/1463 ,  B23H9/001 ,  B23P2700/06 ,  B33Y80/00

Abstract: A method for chemical processing an internal cavity of an additive manufactured (AM) metal workpiece is disclosed in which a connector is provided in fluid connection with the internal cavity and a chemical polishing solution is flowed through the connector and the internal cavity to process the internal cavity to a desired finish.

公开(公告)号：US11732157B2

公开(公告)日：2023-08-22

申请号：US17063965

申请日：2020-10-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Yannan Liang ,  Bin Hu ,  Liqing Wen ,  Shu-Wei Chang

IPC: C09G1/02 ,  H01L21/321 ,  B24B1/00 ,  C09K3/14 ,  C09G1/00 ,  C09K13/06 ,  C09G1/04 ,  C09G1/06 ,  B24B37/04 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212

Abstract: A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.

公开(公告)号：US11718769B2

公开(公告)日：2023-08-08

申请号：US17678148

申请日：2022-02-23

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.

Inventor： Yi Guo

IPC: C09G1/02 ,  C09G1/04 ,  H01L21/304 ,  H01L21/768

CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/304 ,  H01L21/76819

Abstract: A chemical mechanical polishing composition includes water, colloidal silica abrasive particles with a silica core containing a nitrogen species, a cerium compound coating including cerium oxide, cerium hydroxide or mixtures thereof, and a positive zeta potential, optionally an oxidizing agent, optionally a pH adjusting agent, optionally a biocide and optionally a surfactant. The chemical mechanical polishing composition has a pH of less than 7. Also described is a method of polishing a substrate containing silicon dioxide and a method of making the composite colloidal silica particles with the coating of cerium oxide, cerium hydroxide or mixtures thereof. The chemical mechanical polishing composition can be used to enhance the removal of silicon dioxide from a substrate in an acid environment.

公开(公告)号：US11692137B2

公开(公告)日：2023-07-04

申请号：US17486008

申请日：2021-09-27

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu Yoshino ,  Ayano Yamazaki ,  Satoru Yarita ,  Shogo Onishi ,  Yasuto Ishida

IPC: C09K13/06 ,  H01L21/321 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02 ,  H01L21/306 ,  C09K13/00 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09K13/06 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1436 ,  C09K13/00 ,  H01L21/0206 ,  H01L21/02057 ,  H01L21/02065 ,  H01L21/02068 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/3212

Abstract: An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

公开(公告)号：US11692110B2

公开(公告)日：2023-07-04

申请号：US17353236

申请日：2021-06-21

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Krishna P. Murella ,  Joseph D. Rose ,  Hongjun Zhou ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

公开(公告)号：US20230203344A1

公开(公告)日：2023-06-29

申请号：US17927899

申请日：2021-05-21

Applicant: JSR CORPORATION

Inventor： Yuuya Yamada ,  Kouhei Yoshio

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/304

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/304

Abstract: A composition for chemical mechanical polishing and a polishing method allow a semiconductor substrate containing at least one of a polysilicon film and a silicon nitride film to be polished at a high speed, while being capable of reducing the incidence of surface defects in the polished surface. The composition for chemical mechanical polishing contains (A) abrasive grains having plural protrusions on their surfaces and (B) a liquid medium, wherein the absolute value of the zeta-potential of the component (A) in the composition for chemical mechanical polishing is 10 mV or more.

公开(公告)号：US11680187B2

公开(公告)日：2023-06-20

申请号：US17566200

申请日：2021-12-30

Applicant: HOYA CORPORATION

Inventor： Toshio Takizawa

IPC: C09G1/02 ,  G11B5/73 ,  B24B7/24 ,  C03C17/00 ,  G11B5/84

CPC classification number: C09G1/02 ,  B24B7/241 ,  B24B7/245 ,  C03C17/002 ,  G11B5/73921 ,  G11B5/8404

Abstract: Letting a particle diameter be Dx (μm) when a cumulative particle volume cumulated from the small particle diameter side reaches x (%) of the total particle volume in a particle size distribution obtained regarding cerium oxide included in a polishing liquid using a laser diffraction/scattering method, D5 is 1 μm or less, and a difference between D95 and D5 is 3 μm or more.

公开(公告)号：US11680186B2

公开(公告)日：2023-06-20

申请号：US17091260

申请日：2020-11-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Eric Turner ,  Abhudaya Mishra ,  Carl Ballesteros

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  C09K3/14 ,  H01L21/306 ,  C09G1/04 ,  C09K13/06 ,  H01L21/321 ,  C09G1/06 ,  C09G1/00 ,  B24B1/00

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C4 to C40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

公开(公告)号：US20230174821A1

公开(公告)日：2023-06-08

申请号：US17910895

申请日：2021-03-04

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Taiki ICHITSUBO

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.