公开(公告)号：US06866882B1

公开(公告)日：2005-03-15

申请号：US09657627

申请日：2000-09-08

申请人： Hiroshi Shinriki ,  Kenji Matsumoto

发明人： Hiroshi Shinriki ,  Kenji Matsumoto

IPC分类号： H01L21/8247 ,  C23C16/02 ,  C23C16/40 ,  C23C16/448 ,  H01L21/00 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  B05D5/12

CPC分类号： H01L21/67017 ,  C23C16/409 ,  H01L21/31691

摘要： The vacuum degree in a reactor is set to as low as 0.1 Torr. In this state, a butyl acetate solution in which Pb(DPM)2 is dissolved at a concentration of 0.1 mol is transported from a Pb source generator to an evaporator, while the flow rate of the butyl acetate solution is controlled to a predetermined flow rate by a massflow controller, to evaporate the Pb(DPM)2 dissolved together with the butyl acetate by the evaporator. Helium gas is added to these at a flow rate of 250 sccm, and the mixed gas is transported to a shower head. With this operation, source gases are supplied to a wafer in the reactor, while the partial pressure of each source gas is set low.

摘要翻译： 反应器中的真空度设定为低至0.1托。 在该状态下，将Pb（DPM）2以0.1mol的浓度溶解的乙酸丁酯溶液从Pb源发生器输送到蒸发器，同时将乙酸丁酯溶液的流量控制在预定流量 通过质量流量控制器蒸发由蒸发器与乙酸丁酯溶解在一起的Pb（DPM）2。 以250sccm的流量向其中添加氦气，并将混合气体输送到淋浴头。 通过该操作，将源气体供给到反应器中的晶片，同时将各源气体的分压设定得较低。

公开(公告)号：US20050016687A1

公开(公告)日：2005-01-27

申请号：US10913531

申请日：2004-08-09

申请人： Hiroshi Shinriki ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Masahito Sugiura

IPC分类号： C23C16/44 ,  C23C16/56 ,  H01L21/02 ,  H01L21/316 ,  C23F1/00

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/44 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/56

摘要： An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.

摘要翻译： 在半导体晶片上形成由第一和第二钽氧化物层构成的绝缘膜。 首先，通过CVD形成非晶质第一层，并且进行用于除去第一层中所含有机杂质的重整工序。 然后，在第一层上通过CVD形成无定形第二层。 然后，通过在一定时间内将晶片加热至低于结晶温度的温度，将含有臭氧的工艺气体供给到处理室中，来进行用于除去第二层中所含有机杂质的重整工序。 此外，在相同的处理室内，将晶片依次加热至高于结晶温度的第二温度，然后将晶片冷却至低于结晶温度的温度，以使第一和第二层同时结晶。

公开(公告)号：US5652180A

公开(公告)日：1997-07-29

申请号：US264928

申请日：1994-06-24

申请人： Hiroshi Shinriki ,  Hiroshi Yamamoto ,  Nobuyuki Takeyasu ,  Takayuki Komiya ,  Tomohiro Ohta

发明人： Hiroshi Shinriki ,  Hiroshi Yamamoto ,  Nobuyuki Takeyasu ,  Takayuki Komiya ,  Tomohiro Ohta

IPC分类号： H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76879 ,  H01L2924/0002

摘要： A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by a selective Al CVD, and a metal wiring formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.

摘要翻译： 具有接触结构的半导体器件包括硅衬底，形成在硅衬底的表面中的扩散区，沉积在扩散区上的高熔点金属的硅化物膜，形成在硅衬底上的绝缘膜，接触孔 形成在绝缘膜上，使得硅化物膜暴露在接触孔的底部，形成在接触膜底部的硅化物膜的暴露表面上的防扩散膜，通过接触孔形成的插塞 选择性Al CVD，以及形成在绝缘膜上的金属布线，使得金属布线通过插塞，防扩散膜和硅化物膜电连接到扩散区。 抗扩散膜可以通过氮化硅化物膜的表面而形成。

公开(公告)号：US5627102A

公开(公告)日：1997-05-06

申请号：US569319

申请日：1995-12-08

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/28

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5521423A

公开(公告)日：1996-05-28

申请号：US228257

申请日：1994-04-15

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Tomohiro Ohta

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Tomohiro Ohta

IPC分类号： H01L23/525 ,  H01L29/04 ,  H01L27/10 ,  H01L29/00

CPC分类号： H01L23/5252 ,  H01L2924/0002

摘要： An antifuse element suitable for use in FPGA. When a device is miniaturized to reduce the write voltage in an antifuse element and as the film thickness of the antifuse dielectric film is being reduced, the dielectric breakdown voltage is greatly variable due to the irregularity of the underlying metal. If the dielectric film is formed by a metal oxide having a relatively high specific permitivity without changing its parasitic capacity as compared to the prior art, the film thickness of the dielectric film can be increased in comparison with oxide and nitride films formed according to the prior art. The irregularity of the underlying metal can be reduced by coating it with a metal nitride or TiB film or TiC film. To equalize the dielectric breakdown voltage, another insulation film having a film thickness such that the direct tunnel conduction is dominant is formed below the metal oxide. To reduce the irregularity of the metal surface and to reduce the resistance after dielectric breakdown, an amorphous silicon layer is deposited before the metal oxide is deposited thereover to form a laminated film.

摘要翻译： 适用于FPGA的反熔丝元件。 当器件小型化以降低反熔丝元件中的写入电压时，并且由于反熔丝电介质膜的膜厚度正在减小，所以介电击穿电压由于下面的金属的不规则性而极大地变化。 如果与现有技术相比，电介质膜由具有相对高的比容容的金属氧化物形成而不改变其寄生电容，则与根据现有技术形成的氧化物和氮化物膜相比，电介质膜的膜厚可以增加 艺术。 可以通过用金属氮化物或TiB膜或TiC膜涂覆来降低底层金属的不规则性。 为了均衡绝缘击穿电压，具有膜厚度使得直接隧道导通为主的另一绝缘膜形成在金属氧化物的下面。 为了减少金属表面的不规则性并且在介电击穿之后降低电阻，在将金属氧化物沉积在其之前形成非晶硅层以形成层压膜。

公开(公告)号：US5079191A

公开(公告)日：1992-01-07

申请号：US517323

申请日：1990-05-01

申请人： Hiroshi Shinriki ,  Yasushiro Nishioka ,  Noriyuki Sakuma ,  Kiichiro Mukai

发明人： Hiroshi Shinriki ,  Yasushiro Nishioka ,  Noriyuki Sakuma ,  Kiichiro Mukai

IPC分类号： H01L27/108 ,  H01L29/45 ,  H01L29/51 ,  H01L29/92 ,  H01L29/94

CPC分类号： H01L29/516 ,  H01L27/10808 ,  H01L28/40 ,  H01L29/456 ,  H01L29/94 ,  Y10S148/014 ,  Y10S148/116 ,  Y10S148/163 ,  Y10S438/981

摘要： A semiconductor device having a large-capacitance capacitor in which an insulator film is formed underneath a film made of a material having a high dielectric constant, such as tantalum oxide, in such a manner that a portion of the insulator film underneath a defect region which is undesirably thin is thicker than other portions of the insulator film, thereby preventing occurrence of a failure in terms of dielectric strength and deterioration of the lifetime of the capacitor which would otherwise be caused by the existence of the defect region. Also disclosed is a process for producing such semiconductor device. Thus, it is possible to effectively prevent occurrence of problems which would otherwise be caused when a material having a high dielectric constant, such as tantalum oxide, is employed as a dielectric film of a capacitor, so that the reliability of a semiconductor having a large-capacitance capacitor is greatly improved.

摘要翻译： 一种具有大容量电容器的半导体器件，其中绝缘膜形成在由诸如氧化钽之类的具有高介电常数的材料制成的膜下面，绝缘膜的一部分位于缺陷区 不希望地薄的厚度比绝缘膜的其它部分厚，从而防止由于缺陷区域的存在而引起的介电强度和电容器寿命的劣化的发生。 还公开了用于制造这种半导体器件的方法。 因此，可以有效地防止当采用具有高介电常数的材料（例如氧化钽）作为电容器的电介质膜时会引起的问题的发生，使得具有大的半导体的可靠性 电容电容大大提高。

公开(公告)号：US07785658B2

公开(公告)日：2010-08-31

申请号：US11367177

申请日：2006-03-03

申请人： Hiroshi Shinriki ,  Akira Shimizu

发明人： Hiroshi Shinriki ,  Akira Shimizu

IPC分类号： C23C16/06 ,  C23C16/30

CPC分类号： C23C16/0245 ,  C23C16/18 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/02063 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76846 ,  H01L23/53238 ,  H01L23/53295 ,  H01L28/90

摘要： A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.

摘要翻译： 一种用于形成金属布线结构的方法包括：（i）在反应空间中提供包括暴露的布线层和暴露的绝缘层的多层结构; （ii）在还原气氛中至少在绝缘层的暴露表面上引入-NH 2或> NH末端; （iii）将还原性化合物引入反应空间，然后清洗反应空间; （iv）将金属卤化物引入到反应空间中，然后清洗反应空间; （v）引入含有N和H的气体，然后吹扫反应空间; （vi）依次重复步骤（iii）至（v）以产生含金属的阻挡层; 和（vii）在含金属的阻挡层上形成金属膜。

公开(公告)号：US07481902B2

公开(公告)日：2009-01-27

申请号：US10946511

申请日：2004-09-20

申请人： Hiroshi Shinriki ,  Junichi Arami

发明人： Hiroshi Shinriki ,  Junichi Arami

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/0228 ,  B08B7/0035 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45536 ,  C23C16/45548 ,  F16K5/0407 ,  F16K5/0414 ,  F16K51/02 ,  H01L21/02277 ,  H01L21/31691

摘要： A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.

摘要翻译： 基板处理装置包括：处理容器，其设置有在其上排出的待处理和抽真空基板的台，以及以层流形式分别供给到处理容器中的多个源气体的源气体供给系统， 其特征在于，所述排气口具有沿着与所述层流方向大致垂直的方向延伸的狭缝形状，所述排气口与具有形成有与所述狭缝形状对应的狭缝状开口的阀体的阀卡合 排气口的形状，狭缝形状的开口被设置成在垂直于抽空口的延伸方向大致相交的方向上引起相对于排气口的位移，阀改变其开阀程度，经由 所述狭缝形开口的位移。

公开(公告)号：US07037560B1

公开(公告)日：2006-05-02

申请号：US09617254

申请日：2000-07-14

申请人： Hiroshi Shinriki ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Masahito Sugiura

IPC分类号： B05D3/06 ,  B05D3/04 ,  C23C16/40 ,  C23C16/48 ,  C23C16/56

CPC分类号： C23C16/45565 ,  C23C16/405 ,  C23C16/4411 ,  C23C16/45514 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/482 ,  C23C16/54

摘要： A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The film modifying method irradiates a UV ray on ozone to generate active oxygen atoms, thus modifying the metal oxide film by exposing the metal oxide film to the active oxygen atoms in a vacuum atmosphere.

摘要翻译： 一种利用成膜装置的成膜和膜修饰方法，该成膜装置具有在其中存在蒸发的金属氧化物膜材料和蒸发的醇的真空气氛中在半导体晶片上形成金属氧化物膜的醇供应单元。 该膜改性方法对臭氧照射紫外线以产生活性氧原子，从而通过在真空气氛中将金属氧化物膜暴露于活性氧原子来修饰金属氧化物膜。

公开(公告)号：US20050142885A1

公开(公告)日：2005-06-30

申请号：US11066268

申请日：2005-02-28

申请人： Hiroshi Shinriki

发明人： Hiroshi Shinriki

IPC分类号： H01L21/00 ,  H01L21/311 ,  B08B3/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/4763

CPC分类号： H01L21/67115 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/67069

摘要： A thin film formed on a substrate is etched, without generating a plasma, with an etching gas containing a β-diketone and a gas containing water and/or alcohol, thereby exposing a surface of the substrate.

摘要翻译： 蚀刻形成在基板上的薄膜，而不产生等离子体，其中含有β-二酮的蚀刻气体和含有水和/或醇的气体，从而暴露基板的表面。