公开(公告)号：US20100081260A1

公开(公告)日：2010-04-01

申请号：US12321773

申请日：2009-01-26

申请人： Yung-Tin Chen

发明人： Yung-Tin Chen

IPC分类号： H01L21/20

CPC分类号： C23C16/483 ,  C23C16/22 ,  C23C16/24 ,  C23C16/325 ,  C23C16/50 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32862

摘要： An apparatus for high-rate chemical vapor (CVD) deposition of semiconductor films comprises a reaction chamber for receiving therein a substrate and a film forming gas, a gas inlet for introducing the film forming gas into the reaction chamber, an incidence window in the reaction chamber for transmission of a laser sheet into the reaction chamber, a laser disposed outside the reaction chamber for generating the laser sheet and an antenna disposed outside the reaction chamber for generating a plasma therein. The film forming gas in the chamber is excited and decomposed by the laser sheet, which passes in parallel with the substrate along a plane spaced apart therefrom, and concurrent ionization effected by the antenna, thereby forming a dense semiconductor film on the substrate at high rate.

摘要翻译： 用于半导体膜的高速化学蒸汽（CVD）沉积的装置包括用于在其中容纳基底和成膜气体的反应室，用于将成膜气体引入反应室的气体入口，反应中的入射窗 用于将激光片传送到反应室的腔室，设置在反应室外部用于产生激光片的激光器和设置在反应室外部的用于在其中产生等离子体的天线。 腔室中的成膜气体被激光片激发并分解，该激光片沿着与衬底间隔开的平面平行通过，并且由天线实现并发电离，从而以高速率在衬底上形成致密的半导体膜 。

公开(公告)号：US07674335B2

公开(公告)日：2010-03-09

申请号：US11371442

申请日：2006-03-09

申请人： Eugene A. Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

发明人： Eugene A. Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

IPC分类号： C30B21/02

CPC分类号： C30B29/52 ,  C23C16/029 ,  C23C16/22 ,  C23C16/4401 ,  C30B25/02 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for minimizing particle generation during deposition of a graded Si1−xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1−xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.

摘要翻译： 在半导体材料上沉积梯度Si1-xGex层期间最小化颗粒产生的方法包括在包括Si前体和Ge前体的气氛中提供衬底，其中Ge前体的分解温度大于锗烷，并沉积 分级的Si1-xGex层，其具有大于约0.15的最终Ge含量和小于约0.3颗粒/ cm 2的颗粒密度。

公开(公告)号：US20080135516A1

公开(公告)日：2008-06-12

申请号：US11979816

申请日：2007-11-08

申请人： Takashi Yokogawa ,  Yasuhiro Inokuchi ,  Katsuhiko Yamamoto ,  Yoshiaki Hashiba ,  Yasuhiro Ogawa

发明人： Takashi Yokogawa ,  Yasuhiro Inokuchi ,  Katsuhiko Yamamoto ,  Yoshiaki Hashiba ,  Yasuhiro Ogawa

IPC分类号： B44C1/22 ,  C23C16/00

CPC分类号： C23C16/24 ,  C23C16/22 ,  C30B25/08 ,  C30B25/14 ,  C30B29/06 ,  C30B35/00

摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.

摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。

公开(公告)号：US20080128863A1

公开(公告)日：2008-06-05

申请号：US11969154

申请日：2008-01-03

申请人： Yasuichi KONDO ,  Wataru Hirasawa ,  Nobuyuki Sugii

发明人： Yasuichi KONDO ,  Wataru Hirasawa ,  Nobuyuki Sugii

IPC分类号： H01L25/00

CPC分类号： C23C16/45506 ,  C23C16/22 ,  C23C16/45523 ,  C23C16/45563 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/52 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/2807 ,  H01L29/1054 ,  H01L29/66575 ,  H01L29/78

摘要： Gases for film formation are introduced from a plurality of holes provided at a gas nozzle into a processing chamber of a batch-type CVD film-forming apparatus to cause a turbulence of the gases within the processing chamber. In the state where the chamber is kept at a pressure within an atmospheric and quasi-atmospheric pressure region, a silicon-germanium film is epitaxially grown on a semiconductor wafer placed within the processing chamber. Subsequently, a strained silicon film is epitaxially grown on the silicon-germanium film. Thereafter, a semiconductor element is formed in the semiconductor wafer on which the silicon-germanium film and the strained silicon film have been formed, respectively.

摘要翻译： 用于成膜的气体从设置在气体喷嘴的多个孔引入到间歇式CVD成膜装置的处理室中，以引起处理室内的气体的紊流。 在室保持在大气压和准大气压区域内的压力的状态下，在放置在处理室内的半导体晶片上外延生长硅 - 锗膜。 随后，在硅 - 锗膜上外延生长应变硅膜。 此后，分别在其上形成有硅 - 锗膜和应变硅膜的半导体晶片中形成半导体元件。

公开(公告)号：US07176111B2

公开(公告)日：2007-02-13

申请号：US10263623

申请日：2002-10-03

申请人： Kris Baert ,  Matty Caymax ,  Cristina Rusu ,  Sherif Sedky ,  Ann Witvrouw

发明人： Kris Baert ,  Matty Caymax ,  Cristina Rusu ,  Sherif Sedky ,  Ann Witvrouw

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L31/1804 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/017 ,  C23C16/22 ,  G01J5/20 ,  H01L31/09 ,  Y02E10/547 ,  Y02P70/521

摘要： Method and apparatus to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers may be used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1−x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters may be used.

摘要翻译： 获得沉积的多晶和低应力SiGe层的方法和装置。 这些层可以用于微机电系统（MEMS）装置或微加工结构中。 分析影响多晶层中的应力的不同参数。 参数包括但不限于：沉积温度; 半导体的浓度（例如，硅和锗在Si 1 x 1-x层中的浓度，x是浓度参数）; 掺杂剂的浓度（例如硼或磷的浓度）; 压力量; 并使用等离子体。 取决于多晶SiGe生长的特定环境，可以使用不同的参数值。

公开(公告)号：US20060174818A1

公开(公告)日：2006-08-10

申请号：US11371442

申请日：2006-03-09

申请人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew Currie ,  Christopher Vineis ,  Thomas Langdo

发明人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew Currie ,  Christopher Vineis ,  Thomas Langdo

IPC分类号： C30B1/00 ,  C30B28/02 ,  C30B3/00 ,  C30B5/00

CPC分类号： C30B29/52 ,  C23C16/029 ,  C23C16/22 ,  C23C16/4401 ,  C30B25/02 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.

公开(公告)号：US06958253B2

公开(公告)日：2005-10-25

申请号：US10074534

申请日：2002-02-11

申请人： Michael A. Todd

发明人： Michael A. Todd

IPC分类号： C23C16/24 ,  C23C16/02 ,  C23C16/42 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/331 ,  H01L21/337 ,  H01L21/425 ,  H01L21/469 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51 ,  H01L29/737 ,  H01L29/78 ,  H01L31/18 ,  H01L31/20 ,  H01L21/00 ,  C23C16/00 ,  H01L21/8228 ,  H01L21/8249 ,  B05O5/12

CPC分类号： C23C16/0272 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/22 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/56 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/2257 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28194 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3185 ,  H01L21/32055 ,  H01L28/84 ,  H01L29/127 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181 ,  H01L29/66242 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/933

摘要： Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, higher order silanes are employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

摘要翻译： 化学气相沉积工艺利用高阶硅烷和锗前体作为化学前体。 这些方法具有高的沉积速率，但是与使用常规化学前体制备的膜相比，在组成和厚度方面产生更均匀的膜。 在优选的实施方案中，使用高级硅烷沉积在诸如晶体管栅电极的各种应用中可用于半导体工业中的含SiGe的膜。

公开(公告)号：US06821825B2

公开(公告)日：2004-11-23

申请号：US10074563

申请日：2002-02-11

申请人： Michael A. Todd ,  Mark Hawkins

发明人： Michael A. Todd ,  Mark Hawkins

IPC分类号： C23C1624

CPC分类号： C23C16/0272 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/22 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/56 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/2257 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28194 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3185 ,  H01L21/32055 ,  H01L28/84 ,  H01L29/127 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181 ,  H01L29/66242 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/933

摘要： Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

摘要翻译： 化学气相沉积方法利用化学前体，其允许薄膜的沉积在质量传递限制状态或附近进行。 这些方法具有高的沉积速率，但是与使用常规化学前体制备的膜相比，在组成和厚度方面产生更均匀的膜。 在优选的实施方案中，使用较高级的硅烷来沉积在诸如晶体管栅电极的各种应用中可用于半导体工业中的含硅的薄膜。

公开(公告)号：US20040197945A1

公开(公告)日：2004-10-07

申请号：US10816356

申请日：2004-04-02

申请人： Rohm and Haas Electronic Materials L.L.C.

发明人： Egbert Woelk ,  Deodatta Vinayak Shenai-Khatkhate

IPC分类号： H01L051/40

CPC分类号： C07F7/0807 ,  C07F7/30 ,  C23C16/18 ,  C23C16/22 ,  C23C16/28

摘要： Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

摘要翻译： 提供适合用作锗膜气相沉积前体的锗化合物。 还提供了使用这种化合物沉积含锗的薄膜的方法。 这种锗膜在电子器件的制造中特别有用。

公开(公告)号：US20040121620A1

公开(公告)日：2004-06-24

申请号：US10626212

申请日：2003-07-24

发明人： Christophe F. Pomarede ,  Jeff Roberts ,  Eric J. Shero

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： H01L21/28185 ,  C23C16/0218 ,  C23C16/0245 ,  C23C16/22 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/28017 ,  H01L21/28035 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/32055 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material. Preferably less than 10 null of the bulk material incorporates the excited species, which can include fluorine, chlorine and particularly nitrogen excited species.