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41.
公开(公告)号:US12094688B2
公开(公告)日:2024-09-17
申请号:US18451720
申请日:2023-08-17
Applicant: 6K Inc.
Inventor: Michael C. Kozlowski , Ed Petersen , John Colwell , Anthony Andrew
IPC: H01J37/32
CPC classification number: H01J37/32201 , H01J37/3244 , H01J37/32477 , H01J37/32642 , H01J2237/327
Abstract: Disclosed herein are systems, methods, and devices processing feed material utilizing a microwave plasma apparatus comprising a powder ingress preventor (PIP). In some embodiments, the microwave plasma apparatus comprises a core plasma tube and a liner; and a ring structure comprising: a bearing surface, the bearing surface contacting an interior diameter of the core plasma tube; and an opening, the opening contacting an outer diameter of the liner.
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公开(公告)号:US12087550B2
公开(公告)日:2024-09-10
申请号:US17874475
申请日:2022-07-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Vladimir Vsevolodovich Protopopov , Vasily Grigorievich Pashkovskiy , Chansoo Kang , Youngdo Kim , Hoonseop Kim , Sangki Nam , Sejin Oh , Changsoon Lim
IPC: H01J37/32
CPC classification number: H01J37/32201 , H01J37/32935
Abstract: A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.
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43.
公开(公告)号:US20240071725A1
公开(公告)日:2024-02-29
申请号:US18451720
申请日:2023-08-17
Applicant: 6K Inc.
Inventor: Michael C. Kozlowski , Ed Petersen , John Colwell , Anthony Andrew
IPC: H01J37/32
CPC classification number: H01J37/32201 , H01J37/3244 , H01J37/32477 , H01J37/32642 , H01J2237/327
Abstract: Disclosed herein are systems, methods, and devices processing feed material utilizing a microwave plasma apparatus comprising a powder ingress preventor (PIP). In some embodiments, the microwave plasma apparatus comprises a core plasma tube and a liner; and a ring structure comprising: a bearing surface, the bearing surface contacting an interior diameter of the core plasma tube; and an opening, the opening contacting an outer diameter of the liner.
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公开(公告)号:US11859279B2
公开(公告)日:2024-01-02
申请号:US16467828
申请日:2017-12-08
Applicant: DIAM CONCEPT
Inventor: Alix Gicquel , François Des Portes
IPC: C23C16/511 , C23C16/27 , C23C16/455 , C23C16/458 , C23C16/46 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/20 , C30B29/04 , H01J37/32
CPC classification number: C23C16/274 , C23C16/4586 , C23C16/45563 , C23C16/466 , C23C16/511 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/20 , C30B29/04 , H01J37/3244 , H01J37/32201 , H01J37/32247 , H01J37/32458 , H01J37/32513 , H01J37/32715 , H01J37/32724 , H01J37/32834 , H01J2237/20214 , H01J2237/20235 , H01J2237/332
Abstract: The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device.
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45.
公开(公告)号:US20230392255A1
公开(公告)日:2023-12-07
申请号:US18328726
申请日:2023-06-03
Applicant: Plasmability, LLC.
Inventor: William Holber
IPC: C23C16/27 , H01J37/32 , C23C16/505 , C23C16/52 , C23C16/46 , C23C16/458 , C23C16/511
CPC classification number: C23C16/272 , H01J37/32201 , H01J37/321 , C23C16/505 , C23C16/52 , C23C16/463 , C23C16/4581 , C23C16/511 , C23C16/274 , H01J2237/3321
Abstract: A plasma chemical vapor deposition system for growing diamond and diamond-like materials includes a process chamber having an exhaust port that is coupled to an input of a vacuum pump. A plasma generator generates a plasma in the process chamber. A cooling stage is positioned in the process chamber with a substrate holder positioned on a top surface that is configured to mount one or more substrates so they are exposed to the plasma generated by the plasma generator. The substrate holder defines a plenum having one or more portions. One or more pressure controllers are each configured to control a pressure in one of the first and second portion of the plenum so as to control a relative temperature of adjacent portions of the substrate holder.
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46.
公开(公告)号:US11764038B2
公开(公告)日:2023-09-19
申请号:US16952875
申请日:2020-11-19
Applicant: TOKYO ELECTRON LIMITED
Inventor: Shoichiro Matsuyama , Naoki Tamaru , Yasuharu Sasaki
IPC: H01J37/32 , H01L21/67 , H01L21/687 , H01L21/683
CPC classification number: H01J37/32642 , H01J37/32201 , H01J37/32532 , H01J37/32633 , H01J37/32706 , H01L21/67069 , H01L21/6833 , H01L21/68785
Abstract: A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.
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47.
公开(公告)号:US20190189399A1
公开(公告)日:2019-06-20
申请号:US16218848
申请日:2018-12-13
Applicant: APPLIED MATERIALS, INC.
Inventor: SATORU KOBAYASHI , LANCE SCUDDER , DAVID BRITZ , SOONAM PARK , DMITRY LUBOMIRSKY , HIDEO SUGAI
CPC classification number: H01J37/32311 , H01J37/32201 , H01J37/3222 , H01J37/32229 , H01J2237/3341 , H01L21/67017
Abstract: Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.
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公开(公告)号:US20180323043A1
公开(公告)日:2018-11-08
申请号:US15588597
申请日:2017-05-06
Applicant: Applied Materials, Inc.
Inventor: Philip Allan Kraus , Thai Cheng Chua , Mani Subramani
IPC: H01J37/32
CPC classification number: H01J37/32678 , H01J37/32201 , H01J37/32247 , H01J37/32266 , H01J37/32669 , H01J37/32935
Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.
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公开(公告)号:US09837249B2
公开(公告)日:2017-12-05
申请号:US15394583
申请日:2016-12-29
Applicant: Applied Materials, Inc.
Inventor: Satoru Kobayashi , Soonam Park , Dmitry Lubomirsky , Hideo Sugai
IPC: H01J7/24 , H01J37/32 , H01J37/244 , H01J19/80 , H05B41/16
CPC classification number: H01J37/32229 , H01J7/24 , H01J19/80 , H01J37/244 , H01J37/32201 , H01J37/32302 , H01J37/32311 , H01J37/32935 , H01J37/3299 , H05B41/16
Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.
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公开(公告)号:US09653265B2
公开(公告)日:2017-05-16
申请号:US14341409
申请日:2014-07-25
Applicant: Peter F. Vandermeulen
Inventor: Peter F. Vandermeulen
IPC: H01J37/32 , H01J37/05 , H01J37/08 , H01P3/12 , H01Q21/00 , C23C16/511 , C23C16/513 , H01P3/127
CPC classification number: H01J37/32229 , C23C16/511 , C23C16/513 , H01J37/05 , H01J37/08 , H01J37/32192 , H01J37/32201 , H01J37/3244 , H01J37/32669 , H01J2237/057 , H01J2237/0817 , H01J2237/3323 , H01P3/12 , H01P3/127 , H01Q21/0043
Abstract: This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.
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