Method of fabricating phase shift mask
    51.
    发明授权
    Method of fabricating phase shift mask 失效
    制造相移掩模的方法

    公开(公告)号:US06333129B2

    公开(公告)日:2001-12-25

    申请号:US09295352

    申请日:1999-04-21

    IPC分类号: G03F900

    CPC分类号: G03F1/29

    摘要: A method of fabricating a phase shift mask is provided in which light shield film patterns for setting a phase shift region and a phase non-shift region are simultaneously formed on a substrate. A groove is formed in the substrate set as the phase shift region. The light shield film pattern, which contacts the groove and is formed on a region of the substrate set as the phase non-shift region, is removed. A phase shift layer can be formed between the substrate and the light shield film pattern. In this case, regions set by the light shield film pattern become opposite to when the phase shift layer is not formed. That is, a phase shift region is changed into a phase non-shift region, and the phase non-shift region is changed into the phase shift region. As described above, the phase shift region and the phase non-shift region are simultaneously set when the light shield film pattern is formed, thus preventing the position of the phase shift or non-shift region from being shifted due to sequential formation of the phase shift and non-shift regions.

    摘要翻译: 提供一种制造相移掩模的方法,其中在衬底上同时形成用于设置相移区域和相位非移位区域的光屏蔽膜图案。 在衬底组中形成有作为相移区域的沟槽。 除去接触凹槽并形成在作为相位非移位区域的基板的区域上的遮光膜图案。 可以在基板和遮光膜图案之间形成相移层。 在这种情况下,由遮光膜图案设定的区域与没有形成相移层时相反。 也就是说,相移区域被改变为相位非移位区域,并且相位非移位区域变为相移区域。 如上所述,当形成遮光膜图形时,相移区域和相位非移位区域被同时设置,从而防止相移或非移位区域的位置由于相位的顺序形成而偏移 移位和非移位区域。

    Photo mask of semiconductor device and method for manufacturing the same
    52.
    发明授权
    Photo mask of semiconductor device and method for manufacturing the same 失效
    半导体器件的光掩模及其制造方法

    公开(公告)号:US06296975B1

    公开(公告)日:2001-10-02

    申请号:US09426762

    申请日:1999-10-26

    IPC分类号: G03F900

    CPC分类号: G03F1/54

    摘要: A photo mask of a semiconductor device includes a transmission preventing layer formed of a molybdenum alloy, which is a solid solution of a metal atom such as chrome in molybdenum, on a light transmitting substrate. Also, the molybdenum alloy may be a molybdenum vanadium alloy, a molybdenum niobium alloy, a molybdenum tantalum alloy, or a molybdenum tungsten alloy, which is a solid solution of vanadium, niobium, tantalum, or tungsten in molybdenum, respectively. The photo mask provides high resolution during a photolithography process by obtaining a thinner transmission preventing layer.

    摘要翻译: 半导体器件的光掩模包括由钼合金形成的防透光层,其是钼等金属原子的固溶体在透光性基板上。 此外,钼合金可以分别是钼中的钒,铌,钽或钨的固溶体的钼钒合金,钼铌合金,钼钽合金或钼钨合金。 光掩模通过获得较薄的防止传播层在光刻过程中提供高分辨率。

    Housing-type golf-simulation apparatus
    53.
    发明授权
    Housing-type golf-simulation apparatus 有权
    高尔夫球模拟装置

    公开(公告)号:US09566493B2

    公开(公告)日:2017-02-14

    申请号:US14123487

    申请日:2012-06-02

    申请人: Yong Hoon Kim

    发明人: Yong Hoon Kim

    IPC分类号: A63B69/36 G06K9/00

    CPC分类号: A63B69/36 G06K9/00342

    摘要: A housing type golf simulation apparatus and features the housing that the internal space is available having front, rear, upper and left/right side; monitor installation section which is provided backward in the rear side direction from the said front housing so that the monitor can be seated in the said front housing; golf simulation computer which is provided in the said internal space; and the monitor to be seated in the said monitor installation section. Thus, it is advantageous to implement various additional functions in the housing while installing, managing and moving the entire golf simulation apparatus in an integrated module.

    摘要翻译: 一种外壳式高尔夫模拟装置,其特征在于,内部空间具有前,后,上,左/右侧的外壳; 监视器安装部,其从所述前壳体向后方设置,使得所述监视器能够坐在所述前壳体中; 设置在所述内部空间中的高尔夫模拟计算机; 并将显示器安装在所述显示器安装部分中。 因此,在集成模块中安装,管理和移动整个高尔夫模拟装置的同时,在壳体中实现各种附加功能是有利的。

    Internal clock signal generator and operating method thereof
    56.
    发明授权
    Internal clock signal generator and operating method thereof 有权
    内部时钟信号发生器及其操作方法

    公开(公告)号:US08471613B2

    公开(公告)日:2013-06-25

    申请号:US12648674

    申请日:2009-12-29

    IPC分类号: H03L7/06

    摘要: An internal clock signal generation circuit is capable of controlling a unit delay time depending on a frequency of an external clock signal. The internal clock signal generation circuit includes an internal clock signal generation unit configured to generate an internal clock signal corresponding to a plurality of unit delay cells enabled in response to a control signal, and a unit delay time control unit configured to detect a frequency of an external clock signal and control a unit delay time of each of the plurality of unit delay cells.

    摘要翻译: 内部时钟信号发生电路能够根据外部时钟信号的频率来控制单位延迟时间。 内部时钟信号发生电路包括:内部时钟信号生成单元,被配置为产生与响应于控制信号而使能的多个单位延迟单元相对应的内部时钟信号;以及单位延迟时间控制单元, 外部时钟信号并且控制多个单元延迟单元中的每一个的单位延迟时间。

    SEMICONDUCTOR DEVICE
    60.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号:US20100308865A1

    公开(公告)日:2010-12-09

    申请号:US12494748

    申请日:2009-06-30

    申请人: Yong-Hoon Kim

    发明人: Yong-Hoon Kim

    IPC分类号: H03K19/0175

    CPC分类号: H03K19/018521

    摘要: A semiconductor device includes a buffer unit configured to include first and second buffers, connected to each other in a cross-coupled manner, to receive a reference voltage and to buffer an input signal applied to the first and second buffers based on the reference voltage to drive an output terminal with a current-driving capacity; and a drive power adjustor configured to adjust the current-driving capacity depending on a level of a power supply voltage applied to the buffering unit.

    摘要翻译: 半导体器件包括缓冲单元,其被配置为包括以交叉耦合方式彼此连接的第一和第二缓冲器,以接收基准电压,并且基于参考电压缓冲施加到第一和第二缓冲器的输入信号 驱动具有电流驱动能力的输出端子; 以及驱动电力调整器,被配置为根据施加到缓冲单元的电源电压的电平来调整电流驱动能力。