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公开(公告)号:US11837552B2
公开(公告)日:2023-12-05
申请号:US17748308
申请日:2022-05-19
Applicant: MediaTek Inc.
Inventor: Wen-Sung Hsu , Tao Cheng , Nan-Cheng Chen , Che-Ya Chou , Wen-Chou Wu , Yen-Ju Lu , Chih-Ming Hung , Wei-Hsiu Hsu
IPC: H01L23/373 , H01L21/52 , H01L23/31 , H01L23/433 , H01L23/498 , H01L23/00 , H01L25/065 , H01L25/07 , H01L25/00 , H01L29/739 , H01L29/861 , H01L23/051 , H01L25/18 , H01L23/495 , H01L23/538 , H01L21/48 , H01L21/56 , H01L25/10 , H01L25/16 , H01L23/50 , H01L21/683 , H01Q9/04 , H01L23/66 , H01Q1/22 , H01L23/14 , H01Q21/06
CPC classification number: H01L23/5389 , H01L21/486 , H01L21/4846 , H01L21/4853 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3114 , H01L23/3128 , H01L23/49811 , H01L23/49827 , H01L23/50 , H01L23/5383 , H01L23/66 , H01L25/0657 , H01L25/10 , H01L25/105 , H01L25/16 , H01L25/162 , H01L25/165 , H01L25/50 , H01Q1/2283 , H01Q9/0407 , H01Q9/0414 , H01L23/145 , H01L23/49816 , H01L24/13 , H01L24/16 , H01L24/48 , H01L24/81 , H01L2221/68345 , H01L2221/68359 , H01L2223/6677 , H01L2224/131 , H01L2224/13101 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/45099 , H01L2224/48227 , H01L2224/81005 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/014 , H01L2924/1533 , H01L2924/1579 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19106 , H01Q21/065 , H01L2924/181 , H01L2924/00012 , H01L2224/13101 , H01L2924/014 , H01L2924/00014 , H01L2224/45099
Abstract: A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.
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公开(公告)号:US11791266B2
公开(公告)日:2023-10-17
申请号:US17886704
申请日:2022-08-12
Applicant: MediaTek Inc.
Inventor: Yen-Yao Chi , Nai-Wei Liu , Ta-Jen Yu , Tzu-Hung Lin , Wen-Sung Hsu
CPC classification number: H01L23/5283 , H01L21/561 , H01L21/563 , H01L21/565 , H01L23/293 , H01L23/3114 , H01L23/3121 , H01L23/3171 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/96 , H01L2224/0231 , H01L2224/02373 , H01L2224/02381 , H01L2224/0401
Abstract: A semiconductor package structure including a semiconductor die having a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. A first protective insulating layer covers the first and third surfaces of the semiconductor die. A redistribution layer (RDL) structure is electrically coupled to the semiconductor die and surrounded by the first protective insulating layer on the first surface of the semiconductor die. A first passivation layer covers the first protective insulating layer and the RDL structure. At least one conductive structure passes through the first passivation layer and is electrically coupled to the RDL structure. A method of forming the semiconductor package is also provided.
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公开(公告)号:US20230307421A1
公开(公告)日:2023-09-28
申请号:US18203631
申请日:2023-05-30
Applicant: MEDIATEK INC.
Inventor: Ta-Jen Yu , Wen-Chin Tsai , Isabella Song , Tai-Yu Chen , Che-Hung Kuo , Hsing-Chih Liu , Shih-Chin Lin , Wen-Sung Hsu
IPC: H01L25/065 , H01L23/498 , H01L23/00
CPC classification number: H01L25/0657 , H01L23/49816 , H01L24/17 , H10B80/00
Abstract: A package-on-package includes a first package and a second package on the first package. The first package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die and an IC device are mounted on the bottom substrate in a side-by-side configuration. The logic die has a thickness not less than 125 micrometer. Copper cored solder balls are disposed between around the logic die and the IC device to electrically connect the bottom substrate with the top substrate. A sealing resin is filled into the gap between the bottom substrate and the top substrate and seals the logic die, the IC device, and the copper cored solder balls in the gap.
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公开(公告)号:US20230307316A1
公开(公告)日:2023-09-28
申请号:US18116258
申请日:2023-03-01
Applicant: MEDIATEK INC.
Inventor: Chin-Lai Chen , Wei-Che Huang , Wen-Sung Hsu , Chun-Yin Lin , Li-Song Lin , Tai-Yu Chen
IPC: H01L23/427 , H01L23/16 , H01L25/065 , H01L23/00
CPC classification number: H01L23/427 , H01L23/16 , H01L25/0655 , H01L24/16 , H01L24/32 , H01L2924/182 , H01L2224/16225 , H01L2224/32245
Abstract: A semiconductor package includes a substrate having a top surface and a bottom surface. A semiconductor device is mounted on the top surface of the substrate. The semiconductor device has an active front surface directly facing the substrate, and an opposite rear surface. A vapor chamber lid is in thermal contact with the rear surface of the semiconductor device. The vapor chamber lid includes an internal vacuum-sealed cavity that stores a working fluid, and wick structures for recirculating the working fluid within the internal vacuum-sealed cavity.
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公开(公告)号:US11670596B2
公开(公告)日:2023-06-06
申请号:US17208175
申请日:2021-03-22
Applicant: MEDIATEK INC.
Inventor: Yi-Lin Tsai , Wen-Sung Hsu , I-Hsuan Peng , Yi-Jou Lin
IPC: H01L23/538 , H01L23/498 , H01L23/00
CPC classification number: H01L23/5381 , H01L23/49816 , H01L24/20 , H01L24/73 , H01L2224/224 , H01L2224/73104
Abstract: A semiconductor package structure includes a substrate, a first redistribution layer, a second redistribution layer, a bridge structure, a first semiconductor component, and a second semiconductor component. The first redistribution layer is over the substrate. The second redistribution layer is over the first redistribution layer. The bridge structure is between the first redistribution layer and the second redistribution layer, wherein the bridge structure includes an active device. The first semiconductor component and the second semiconductor component are located over the second redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the second redistribution layer and the bridge structure.
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公开(公告)号:US20230073399A1
公开(公告)日:2023-03-09
申请号:US17989498
申请日:2022-11-17
Applicant: MediaTek Inc.
Inventor: Yen-Yao Chi , Nai-Wei Liu , Ta-Jen Yu , Tzu-Hung Lin , Wen-Sung Hsu , Shih-Chin Lin
Abstract: A semiconductor package structure includes a semiconductor die, a redistribution layer (RDL) structure, a protective insulating layer, and a conductive structure. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die. The protective insulating layer covers the RDL structure, the second surface and the third surface of the semiconductor die. The conductive structure passes through the protective insulating layer and is electrically coupled to the RDL structure.
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公开(公告)号:US20210202425A1
公开(公告)日:2021-07-01
申请号:US17199237
申请日:2021-03-11
Applicant: MediaTek Inc.
Inventor: Che-Ya Chou , Wen-Sung Hsu , Nan-Cheng Chen
IPC: H01L23/00 , H01L23/31 , H01L23/498 , H01L23/367 , H01L25/065 , H05K1/11
Abstract: A semiconductor package is provided. The semiconductor package includes a semiconductor device bonded to a base through a first conductive structure. The semiconductor device includes a carrier substrate including a conductive trace. A portion of the conductive trace is elongated. The semiconductor device also includes a second conductive structure above the carrier substrate. A portion of the second conductive structure is in contact with the portion of the conductive trace. The semiconductor device further includes a semiconductor body mounted above the conductive trace. The semiconductor body is connected to the second conductive structure.
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公开(公告)号:US10354974B2
公开(公告)日:2019-07-16
申请号:US14736684
申请日:2015-06-11
Applicant: MediaTek Inc.
Inventor: Wen-Sung Hsu , Shih-Chin Lin , Andrew C. Chang , Tao Cheng
IPC: H01L25/065 , H01L23/498 , H01L23/528 , H01L23/31 , H01L23/538 , H01L23/00 , H01L25/10 , H01L25/00
Abstract: A chip package structure and a method for forming a chip package are provided. The chip package structure includes a first package which includes at least a semiconductor die, a dielectric structure surrounding the semiconductor die, and a plurality of conductive structures penetrating through the dielectric structure and surrounding the semiconductor die. The package structure also includes an interposer substrate over the first package and a plurality of conductive features in or over the interposer substrate. The package structure further includes a second package over the interposer substrate, and the first package electrically couples the second package through the conductive structures and the conductive features.
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公开(公告)号:US10312222B2
公开(公告)日:2019-06-04
申请号:US15848083
申请日:2017-12-20
Applicant: MEDIATEK Inc.
Inventor: Wen-Sung Hsu , Shih-Chin Lin , Tao Cheng
IPC: H01L25/065 , H01L23/498 , H01L21/48 , H01L21/52 , H01L25/00 , H01L21/56 , H01L23/538 , H01L25/10
Abstract: A semiconductor package includes a substrate, a first electronic component, a first conductive layer, a first pillar layer and a first package body. The first electronic component is disposed on the substrate. The first pillar layer connects the first conductive layer and the substrate. The first package body encapsulates the first conductive layer, the first pillar layer and the first electronic component. The first conductive layer is embedded in the first package body.
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公开(公告)号:US20180076166A1
公开(公告)日:2018-03-15
申请号:US15638388
申请日:2017-06-30
Applicant: MEDIATEK INC.
Inventor: Ta-Jen Yu , Yu-Sheng Hung , Wen-Sung Hsu
CPC classification number: H01L24/17 , H01L21/4853 , H01L21/56 , H01L21/561 , H01L21/6836 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/5389 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L25/105 , H01L25/16 , H01L2224/04026 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05567 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/1146 , H01L2224/1147 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/16235 , H01L2224/16237 , H01L2224/73204 , H01L2224/81005 , H01L2224/81024 , H01L2224/81191 , H01L2224/97 , H01L2225/1023 , H01L2225/1058 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/00014 , H01L2924/014 , H01L2224/81
Abstract: A method for fabricating a semiconductor is disclosed. A carrier substrate is provided. A redistribution layer (RDL) structure is formed on the carrier substrate. The RDL structure comprises at least a bump pad. A semiconductor die is mounted on the RDL structure. A molding compound is formed on the semiconductor die and the RDL structure. The carrier substrate is removed to reveal a plurality of solder ball pads of the RDL structure. A plurality of conductive structures are formed on the solder ball pads.
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