公开(公告)号：US4107665A

公开(公告)日：1978-08-15

申请号：US809314

申请日：1977-06-23

申请人： Steven T. Mayer ,  Ronald E. Milner

发明人： Steven T. Mayer ,  Ronald E. Milner

IPC分类号： A63F13/00 ,  A63F13/04 ,  G09G5/26 ,  G09G5/36 ,  G06K15/20

CPC分类号： G09G5/26 ,  A63F13/00 ,  A63F13/55

摘要： Apparatus for continuous variation of object size on a raster type video screen in a television game. The input of a voltage controlled oscillator is varied by a game controller. The output of the oscillator drives horizontal and vertical counters at rates corresponding to the object size. These counters provide respectively horizontal and vertical addresses to a picture generator read only memory. The faster the counters are incremented the smaller the object; and with regard to the vertical address, horizontal lines of the picture are actually skipped in order to reduce the size of the object.

摘要翻译： 用于在电视游戏中的光栅型视频屏幕上连续变化物体大小的装置。 压控振荡器的输入由游戏控制器改变。 振荡器的输出以与对象大小相对应的速率驱动水平和垂直计数器。 这些计数器分别为图像发生器只读存储器提供水平和垂直地址。 计数器增加越快对象越小; 并且关于垂直地址，实际上跳过图片的水平线以减小对象的大小。

公开(公告)号：US09404194B2

公开(公告)日：2016-08-02

申请号：US13305384

申请日：2011-11-28

申请人： Steven T. Mayer ,  David W. Porter

发明人： Steven T. Mayer ,  David W. Porter

IPC分类号： C25D21/12 ,  C25D21/14 ,  C25D21/18 ,  C25D7/12 ,  C25D3/60 ,  C25D17/00 ,  C25D3/56 ,  C25D5/02 ,  C25C1/20 ,  C25C7/00

CPC分类号： C25D3/60 ,  C25C1/20 ,  C25C7/00 ,  C25D3/56 ,  C25D5/022 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25D21/14 ,  C25D21/18

摘要： An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

摘要翻译： 用于连续同时电镀具有基本上不同的标准电沉积电位（例如，用于沉积Sn-Ag合金）的两种金属的装置包括阳极室，用于容纳包含第一少量贵金属（例如锡）的离子的阳极电解液， 但不是第二个，更高贵的金属（例如银）和活性阳极; 阴极室，用于容纳包含第一金属（例如锡）的离子，第二，更贵金属（例如银）的离子和底物的阴极电解液; 位于阳极室和阴极室之间的分离结构，其中分离结构基本上防止更贵族金属从阴极电解液转移到阳极电解液; 流体特征和相关联的控制器，其耦合到所述装置并且被配置为执行连续电镀，同时在延长的使用期限内保持基本恒定的电镀浴组分的浓度。

公开(公告)号：US09221081B1

公开(公告)日：2015-12-29

申请号：US13563619

申请日：2012-07-31

申请人： Steven T. Mayer ,  Thomas A. Ponnuswamy ,  Lee Peng Chua ,  Robert Rash

发明人： Steven T. Mayer ,  Thomas A. Ponnuswamy ,  Lee Peng Chua ,  Robert Rash

IPC分类号： B08B1/00 ,  B08B1/04 ,  H01L21/67

CPC分类号： C25D21/08 ,  B08B1/006 ,  B08B1/04 ,  B08B3/00 ,  C23G1/02 ,  C25D21/00 ,  C25D21/12 ,  G01N21/9501 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/6723

摘要： Disclosed herein are cleaning discs for cleaning one or more elements of a semiconductor processing apparatus. In some embodiments, the disc may have a substantially circular upper surface, a substantially circular lower surface, a substantially circular edge joining the upper and lower surfaces, and a plurality of pores opening at the edge and having an interior extending into the interior of the disc. In some embodiments, the pores are dimensioned such that a cleaning agent may be retained in the interior of the pores by an adhesive force between the cleaning agent and the interior surface of the pores. Also disclosed herein are cleaning methods involving loading a cleaning agent into a plurality of pores of a cleaning disc, positioning the cleaning disc within a semiconductor processing apparatus, and releasing cleaning agent from the plurality of pores such that elements of the apparatus are contacted by the released cleaning agent.

摘要翻译： 这里公开了用于清洁半导体处理装置的一个或多个元件的清洁盘。 在一些实施例中，盘可以具有基本上圆形的上表面，基本上圆形的下表面，连接上表面和下表面的基本圆形的边缘，以及在边缘处开口的多个孔，并且具有延伸到内侧的内部 光盘。 在一些实施例中，孔的尺寸使得清洁剂可以通过清洁剂和孔的内表面之间的粘合力保持在孔的内部。 本文还公开了一种清洁方法，其包括将清洁剂装载到清洁盘的多个孔中，将清洁盘定位在半导体处理装置内，以及从多个孔释放清洁剂，使得装置的元件与 释放清洁剂。

公开(公告)号：US08962085B2

公开(公告)日：2015-02-24

申请号：US12684787

申请日：2010-01-08

申请人： Steven T. Mayer ,  David W. Porter ,  Mark J. Willey

发明人： Steven T. Mayer ,  David W. Porter ,  Mark J. Willey

IPC分类号： C25D5/34 ,  B05D5/12 ,  H05K3/00 ,  B05D3/00 ,  C25D5/02 ,  B05D1/02 ,  B05D1/18 ,  B23H3/00 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  C25D17/00 ,  C25D21/04 ,  C25D5/00 ,  C25D3/38

CPC分类号： H01L21/2885 ,  C25D3/38 ,  C25D5/003 ,  C25D5/02 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D21/04 ,  H01L21/76861 ,  H01L21/76898

摘要： Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.

摘要翻译： 公开了预润湿装置的设计和方法。 这些设备的设计和方法用于在将晶片上的金属镀覆在晶片表面之前预先浸湿晶片。 公开的预润湿流体的组合物防止晶片上种子层的腐蚀，并且还改善晶片上特征的填充率。

公开(公告)号：US20140197037A1

公开(公告)日：2014-07-17

申请号：US13744335

申请日：2013-01-17

申请人： Bryan L. Buckalew ,  Steven T. Mayer ,  Thomas Ponnuswamy ,  David Porter

发明人： Bryan L. Buckalew ,  Steven T. Mayer ,  Thomas Ponnuswamy ,  David Porter

IPC分类号： H05K3/00

CPC分类号： H01L24/11 ,  C25D3/38 ,  C25D3/60 ,  C25D5/10 ,  C25D5/50 ,  C25D17/00 ,  H01L21/2885 ,  H01L21/6723 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/16503 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/3656 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A method of treating a copper containing structure on a substrate is disclosed. The method includes electrodepositing the copper containing structure on a substrate, annealing the copper containing structure, and forming an interface between a pad of the copper containing structure and a solder structure after anneal. The interface can have improved resistance to interfacial voiding. The copper containing structure is configured to deliver current between one or more ports and one or more solder structures in the integrated circuit package. Annealing the copper containing structure can move impurities and vacancies to the surface of the copper containing structure for subsequent removal.

摘要翻译： 公开了一种在衬底上处理含铜结构的方法。 该方法包括在基板上电沉积含铜结构，退火含铜结构，并在退火后形成含铜结构的焊盘和焊料结构之间的界面。 界面可以改善对界面空隙的抵抗力。 含铜结构被配置为在集成电路封装中的一个或多个端口与一个或多个焊料结构之间输送电流。 退火含铜结构可以将杂质和空位移动到含铜结构的表面以便随后除去。

公开(公告)号：US08597461B2

公开(公告)日：2013-12-03

申请号：US12871662

申请日：2010-08-30

申请人： Steven T. Mayer ,  David W. Porter

发明人： Steven T. Mayer ,  David W. Porter

IPC分类号： C23F1/46 ,  C23F1/00 ,  C23F1/08

CPC分类号： C23F1/46 ,  C23F1/08 ,  C23F1/34 ,  C25C7/00 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67051

摘要： Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

公开(公告)号：US08470191B2

公开(公告)日：2013-06-25

申请号：US11890790

申请日：2007-08-06

申请人： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

发明人： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

IPC分类号： C23F1/02

CPC分类号： C25D17/14 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/08 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25F3/16 ,  C25F3/30 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

公开(公告)号：US08048280B2

公开(公告)日：2011-11-01

申请号：US11228712

申请日：2005-09-16

申请人： Steven T. Mayer ,  Vijay Bhaskaran ,  Evan E. Patton ,  Robert L. Jackson ,  Jonathan Reid

发明人： Steven T. Mayer ,  Vijay Bhaskaran ,  Evan E. Patton ,  Robert L. Jackson ,  Jonathan Reid

IPC分类号： C25D5/18 ,  C25D7/12 ,  H01L21/768

CPC分类号： C25D3/02 ,  C25D3/38 ,  C25D5/022 ,  C25D5/18 ,  H01L21/2885 ,  H01L21/76877 ,  H05K3/423

摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.

摘要翻译： 描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。 阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。 还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。 还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。

公开(公告)号：US20110056913A1

公开(公告)日：2011-03-10

申请号：US12871662

申请日：2010-08-30

申请人： Steven T. Mayer ,  David W. Porter

发明人： Steven T. Mayer ,  David W. Porter

IPC分类号： C23F1/46 ,  C23F1/08 ,  C23F1/00

CPC分类号： C23F1/46 ,  C23F1/08 ,  C23F1/34 ,  C25C7/00 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67051

摘要： Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

摘要翻译： 描述了在回收和重构化学蚀刻剂的同时从工件各向同性蚀刻金属的方法和装置。 各种实施例包括用于蚀刻的装置和方法，其中回收和重构的蚀刻剂以连续循环再循环方案重复使用。 可以实现稳定状态条件，其中这些方法反复反复，偶尔出血和进料以补充试剂和/或调节诸如pH，离子强度，盐度等参数。

公开(公告)号：US20110025338A1

公开(公告)日：2011-02-03

申请号：US12462354

申请日：2009-08-03

申请人： Mark J. Willey ,  Lian Guo ,  Steven T. Mayer

发明人： Mark J. Willey ,  Lian Guo ,  Steven T. Mayer

IPC分类号： G01N27/06

CPC分类号： G01N27/42

摘要： The working electrode in the flow channel of a flow-through electrolytic detection cell is preconditioned by flowing a preconditioning electroplating solution with preconditioner species through the flow channel while applying a negative potential. Flow of liquid through the flow channel is rapidly switched from preconditioning solution to a target solution containing an organic target solute to be measured. The transient response of the system resulting from exposure of the working electrode to organic target solute is detected by measuring current density during an initial transient time period. An unknown concentration of target solute is determined by comparing the transient response with one or more transient responses characteristic of known concentrations. A preferred measuring system is operable to switch flow from preconditioning solution to target solution in about 200 milliseconds or less.

摘要翻译： 通过电流检测单元的流动通道中的工作电极通过在施加负电位的情况下通过流动通道流动具有预调节剂种类的预处理电镀溶液来预处理。 通过流动通道的液体流从预处理溶液快速切换到含有待测量的有机靶溶质的目标溶液。 通过在初始瞬变时间段内测量电流密度来检测由工作电极暴露于有机靶溶质而产生的系统的瞬态响应。 通过将瞬态响应与已知浓度特征的一个或多个瞬态响应进行比较来确定目标溶质浓度未知。 优选的测量系统可操作以在大约200毫秒或更短的时间内将流从预处理溶液切换到目标溶液。