公开(公告)号：US10586759B2

公开(公告)日：2020-03-10

申请号：US16017010

申请日：2018-06-25

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Gabriel Z. Guevara ,  Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Laura Wills Mirkarimi

IPC: H01L23/498 ,  H01L25/065 ,  H01L21/48 ,  H01L25/00 ,  H01L23/00

Abstract: An interposer (110) has contact pads at the top and/or bottom surfaces for connection to circuit modules (e.g. ICs 112). The interposer includes a substrate made of multiple layers (110.i). Each layer can be a substrate (110S), possibly a ceramic substrate, with circuitry. The substrates extend vertically. Multiple interposers are fabricated in a single structure (310) made of vertical layers (310.i) corresponding to the interposers' layers. The structure is diced along horizontal planes (314) to provide the interposers. An interposer's vertical conductive lines (similar to through-substrate vias) can be formed on the substrates' surfaces before dicing and before all the substrates are attached to each other. Thus, there is no need to make through-substrate holes for the vertical conductive lines. Non-vertical features can also be formed on the substrates' surfaces before the substrates are attached to each other. Other embodiments are also provided.

公开(公告)号：US20200043817A1

公开(公告)日：2020-02-06

申请号：US16599683

申请日：2019-10-11

Applicant: INVENSAS CORPORATION

Inventor： Hong Shen ,  Charles G. Woychik ,  Sitaram R. Arkalgud

IPC: H01L23/055 ,  H01L25/065 ,  H01L21/48 ,  H01L23/538 ,  H01L23/48 ,  H01L25/00 ,  H01L23/498 ,  H01L23/31 ,  H01L21/768 ,  H01L21/288 ,  H01L23/00 ,  H01L23/367 ,  H01L23/14 ,  H01L23/04 ,  H01L21/56

Abstract: Dies (110) with integrated circuits are attached to a wiring substrate (120), possibly an interposer, and are protected by a protective substrate (410) attached to a wiring substrate. The dies are located in cavities in the protective substrate (the dies may protrude out of the cavities). In some embodiments, each cavity surface puts pressure on the die to strengthen the mechanical attachment of the die the wiring substrate, to provide good thermal conductivity between the dies and the ambient (or a heat sink), to counteract the die warpage, and possibly reduce the vertical size. The protective substrate may or may not have its own circuitry connected to the dies or to the wiring substrate. Other features are also provided.

公开(公告)号：US10535564B2

公开(公告)日：2020-01-14

申请号：US15649457

申请日：2017-07-13

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Guilian Gao ,  Liang Wang ,  Hong Shen ,  Arkalgud R. Sitaram

IPC: H01L21/82 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/48 ,  H01L23/538

Abstract: A device and method of forming the device that includes cavities formed in a substrate of a substrate device, the substrate device also including conductive vias formed in the substrate. Chip devices, wafers, and other substrate devices can be mounted to the substrate device. Encapsulation layers and materials may be formed over the substrate device in order to fill the cavities.

公开(公告)号：US10515926B2

公开(公告)日：2019-12-24

申请号：US15834658

申请日：2017-12-07

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Guilian Gao

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78 ,  H01L21/683 ,  H01L25/00 ,  H01L21/768 ,  H01L21/306 ,  H01L21/304 ,  H01L21/3105

Abstract: Systems and methods for providing 3D wafer assembly with known-good-dies are provided. An example method compiles an index of dies on a semiconductor wafer and removes the defective dies to provide a wafer with dies that are all operational. Defective dies on multiple wafers may be removed in parallel, and resulting wafers with all good dies stacked in 3D wafer assembly. In an implementation, the spaces left by removed defective dies may be filled at least in part with operational dies or with a fill material. Defective dies may be replaced either before or after wafer-to-wafer assembly to eliminate production of defective stacked devices, or the spaces may be left empty. A bottom device wafer may also have its defective dies removed or replaced, resulting in wafer-to-wafer assembly that provides 3D stacks with no defective dies.

公开(公告)号：US10431648B2

公开(公告)日：2019-10-01

申请号：US16272736

申请日：2019-02-11

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Hong Shen ,  Rajesh Katkar

IPC: H01L21/56 ,  H01L49/02 ,  H01L23/00 ,  H01L25/10 ,  H01L25/11 ,  H01L25/16 ,  H01L25/00 ,  H01L23/522 ,  H01L23/498

Abstract: Each of a first and a second integrated circuit structures has hole(s) in the top surface, and capacitors at least partially located in the holes. A semiconductor die is attached to the top surface of the second structure. Then the first and second structures are bonded together so that the die becomes disposed in the first structure's cavity, and the holes of the two structures are aligned to electrically connect the respective capacitors to each other. A filler is injected into the cavity through one or more channels in the substrate of the first structure. Other embodiments are also provided.

公开(公告)号：US10163833B2

公开(公告)日：2018-12-25

申请号：US15584961

申请日：2017-05-02

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen

IPC: H01L23/02 ,  H01L23/00 ,  H01L25/065 ,  H01L23/498 ,  H01L23/367 ,  H01L25/18 ,  B81B7/00 ,  H01L23/538 ,  H01L21/56 ,  H01L25/00 ,  H01L23/48 ,  H01L21/768 ,  B81C1/00 ,  H01L23/31 ,  H01L25/10 ,  H01L23/34

Abstract: In a multi-chip module (MCM), a “super” chip (110N) is attached to multiple “plain” chips (110F′ “super” and “plain” chips can be any chips). The super chip is positioned above the wiring board (WB) but below at least some of plain chips (110F). The plain chips overlap the super chip. Further, the plain chips' low speed IOs can be connected to the WB by long direct connections such as bond wires (e.g. BVAs) or solder stacks; such connections can be placed side by side with the super chip. Such connections can be long, so the super chip is not required to be thin. Also, if through-substrate vias (TSVs) are omitted, the manufacturing yield is high and the manufacturing cost is low. Other structures are provided that combine the short and long direct connections to obtain desired physical and electrical properties.

公开(公告)号：US09905507B2

公开(公告)日：2018-02-27

申请号：US15181872

申请日：2016-06-14

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Zhuowen Sun ,  Charles G. Woychik ,  Arkalgud Sitaram

IPC: H01L21/768 ,  H01L23/498 ,  H05K1/11 ,  H01L25/00 ,  H05K1/18 ,  H05K1/02 ,  H05K1/14 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L21/683 ,  H01L25/03 ,  H01L21/48 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/49833 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/498 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/538 ,  H01L23/5381 ,  H01L23/5383 ,  H01L23/5385 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/1615 ,  H01L2924/16153 ,  H01L2924/16251 ,  H01L2924/181 ,  H05K1/0271 ,  H05K1/111 ,  H05K1/141 ,  H05K1/181 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A combined interposer (120) includes multiple constituent interposers (120.i), each with its own substrate (120.iS) and with a circuit layer (e.g. redistribution layer) on top and/or bottom of the substrate. The top circuit layers can be part of a common circuit layer (120R.T) which can interconnect different interposers. Likewise, the bottom circuit layers can be part of a common circuit layer (120R.B). The constituent interposer substrates (120.iS) are initially part of a common wafer, and the common top circuit layer is fabricated before separation of the constituent interposer substrates from the wafer. Use of separated substrates reduces stress compared to use of a single large substrate. Other features are also provided.

公开(公告)号：US09859234B2

公开(公告)日：2018-01-02

申请号：US14819744

申请日：2015-08-06

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Guilian Gao ,  Bongsub Lee ,  Scott McGrath ,  Hong Shen ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Akash Agrawal

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/311 ,  H01L23/48 ,  H01L23/498 ,  H01L21/48 ,  H01L23/532

CPC classification number: H01L24/03 ,  H01L21/31144 ,  H01L21/486 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/03009 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/10126 ,  H01L2224/13016 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A method of processing an interconnection element can include providing a substrate element having front and rear opposite surfaces and electrically conductive structure, a first dielectric layer overlying the front surface and a plurality of conductive contacts at a first surface of the first dielectric layer, and a second dielectric layer overlying the rear surface and having a conductive element at a second surface of the second dielectric layer. The method can also include removing a portion of the second dielectric layer so as to reduce the thickness of the portion, and to provide a raised portion of the second dielectric layer having a first thickness and a lowered portion having a second thickness. The first thickness can be greater than the second thickness. At least a portion of the conductive element can be recessed below a height of the first thickness of the second dielectric layer.

公开(公告)号：US09831302B2

公开(公告)日：2017-11-28

申请号：US15360121

申请日：2016-11-23

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Hong Shen ,  Rajesh Katkar

IPC: H01L21/02 ,  H01L49/02 ,  H01L21/56 ,  H01L23/00 ,  H01L25/10 ,  H01L25/11 ,  H01L25/16 ,  H01L25/00 ,  H01L23/498 ,  H01L23/522

CPC classification number: H01L28/60 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5223 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L25/105 ,  H01L25/11 ,  H01L25/115 ,  H01L25/165 ,  H01L25/50 ,  H01L28/40 ,  H01L28/65 ,  H01L2224/05009 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1205 ,  H01L2924/15311 ,  H01L2924/16153 ,  H01L2924/00

Abstract: A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first region. The capacitor has a pair of electrodes, each coupled to one of a pair of conductive pads, at least one of which is disposed on a lower surface of the handle wafer. An interposer having an upper surface with a conductive pad and at least one semiconductor die disposed thereon is also provided. The die has an integrated circuit that is electroconductively coupled to a redistribution layer (RDL) of the interposer. The lower surface of the handle wafer is bonded to the upper surface of the interposer such that the die is disposed below or within the cavity and the electroconductive pad of the handle wafer is bonded to the electroconductive pad of the interposer in a metal-to-metal bond.

公开(公告)号：US09754866B2

公开(公告)日：2017-09-05

申请号：US15248726

申请日：2016-08-26

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen ,  Cyprian Emeka Uzoh ,  Belgacem Haba

IPC: H01L23/495 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L21/78 ,  H01L25/10 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/367 ,  H01L25/065 ,  H01L25/16 ,  H01L25/18 ,  H01L23/04 ,  H01L25/00

CPC classification number: H01L23/498 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/04 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/3675 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/16113 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1058 ,  H01L2924/1427 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19102 ,  H01L2224/81

Abstract: A method of making an assembly can include forming a circuit structure defining front and rear surfaces, and forming a substrate onto the rear surface. The forming of the circuit structure can include forming a first dielectric layer coupled to the carrier. The first dielectric layer can include front contacts configured for joining with contacts of one or more microelectronic elements, and first traces. The forming of the circuit structure can include forming rear conductive elements at the rear surface coupled with the front contacts through the first traces. The forming of the substrate can include forming a dielectric element directly on the rear surface. The dielectric element can have first conductive elements facing the rear conductive elements and joined thereto. The dielectric element can include second traces coupled with the first conductive elements. The forming of the substrate can include forming terminals at a surface of the substrate.