公开(公告)号：US20160141203A1

公开(公告)日：2016-05-19

申请号：US14822313

申请日：2015-08-10

Applicant: Applied Materials, Inc.

Inventor： MEI-YEE SHEK ,  Weifeng Ye ,  Li-Qun Xia ,  Kang Sub Yim ,  Kelvin Chan

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

Abstract translation: 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 本文所述的实施例通过防止电介质表面的损坏来修复沉积的选择性，修复电介质表面的损伤，例如钴沉积过程中可能发生的损伤，以及控制钴层的沉积参数。

公开(公告)号：US09123532B2

公开(公告)日：2015-09-01

申请号：US14530210

申请日：2014-10-31

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Alexandros T. Demos

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/263 ,  H01L21/3105 ,  H01L21/768 ,  C23C16/04 ,  C23C16/40

CPC classification number: H01L21/02348 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.

Abstract translation: 提供了一种用于修复和降低半导体制造中使用的低k电介质层的介电常数的方法。 在一个实施方案中，修复损坏的低k电介质层的方法，包括将多孔低k电介质层暴露于含乙烯基硅烷的化合物，并任选地将多孔低k电介质层暴露于紫外线（UV）固化过程。

公开(公告)号：US20250118536A1

公开(公告)日：2025-04-10

申请号：US18484379

申请日：2023-10-10

Applicant: Applied Materials, Inc.

Inventor： Yi-Hsuan Hsiao ,  Dongqing Yang ,  Kelvin Chan ,  Philip A. Kraus ,  Thai Cheng Chua ,  Ping-Hwa Hsieh ,  Nitin K. Ingle

IPC: H01J37/32 ,  H01L21/311

Abstract: Semiconductor processing systems and methods for increased etch selectivity and rate are provided. Methods include etching a target material of a semiconductor substrate by flowing one or more plasma precursors through a microwave applicator into a remote plasma region of a semiconductor processing chamber. Generating a remote plasma within the remote plasma region at a microwave frequency, where the generated remote plasma comprises a density of greater than 1×1010 per cm3, an ion energy of less than or about 50 eV, or a combination thereof. Flowing the plasma effluents into a processing region of the semiconductor processing chamber. The microwave applicator includes a resonator body and a plate, where the resonator body is formed from or coated with a first dielectric material and the plate is formed from or coated with a second dielectric material.

公开(公告)号：US12094707B2

公开(公告)日：2024-09-17

申请号：US17070821

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Travis Koh ,  Simon Huang ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/50 ,  C23C16/52

CPC classification number: H01L21/02274 ,  C23C16/26 ,  C23C16/52 ,  C23C16/50

Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

公开(公告)号：US11887856B2

公开(公告)日：2024-01-30

申请号：US17347070

申请日：2021-06-14

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  C23C16/14 ,  C23C16/452 ,  C23C16/458 ,  H01L21/768

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/14 ,  C23C16/452 ,  C23C16/4557 ,  C23C16/4584 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/76877

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US20230395356A1

公开(公告)日：2023-12-07

申请号：US17834278

申请日：2022-06-07

Applicant: Applied Materials, Inc.

Inventor： Anantha Subramani ,  Yang Guo ,  Seyyed Fazeli ,  Kelvin Chan ,  Chandrashekara Baginagere ,  Brian Alvarez ,  Philip Kraus

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32247 ,  C23C16/45536 ,  C23C16/4584 ,  H01J2237/162 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/332

Abstract: A plasma treatment chamber comprises a chamber body having an opening in a top surface thereof. A rotatable pedestal is within the chamber body having a support surface to hold and rotate a workpiece in a processing region. A cross-flow pumping ring is over the opening in the chamber body to inject a gas flow in a direction generally parallel to and across a surface of the workpiece. A lid is over the cross-flow pumping ring, the lid having a plurality of microwave resonators to ignite the gas flow and form plasma.

公开(公告)号：US20230369112A1

公开(公告)日：2023-11-16

申请号：US18224904

申请日：2023-07-21

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Kelvin Chan ,  Shantanu Kallakuri ,  Sony Varghese ,  John Hautala

IPC: H01L21/768 ,  H01L21/48

CPC classification number: H01L21/76879 ,  H01L21/486

Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.

公开(公告)号：US11776805B2

公开(公告)日：2023-10-03

申请号：US17197475

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Yi Xu ,  Yu Lei ,  Xianmin Tang ,  Kelvin Chan ,  Alexander Jansen ,  Philip A. Kraus

IPC: H01L21/02 ,  H01L21/30

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/3003

Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.

公开(公告)号：US20230124304A1

公开(公告)日：2023-04-20

申请号：US17903892

申请日：2022-09-06

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  RUIYING HAO ,  WAYNE FRENCH ,  FARZAD HOUSHMAND

IPC: C23C16/455 ,  C23C14/54 ,  C23C16/52

Abstract: Embodiments include a gas distribution assembly for a semiconductor processing chamber. In an embodiment, the gas distribution assembly comprises a flow ratio controller (FRC). In an embodiment, a first line from the FRC goes to an ampoule, and a second line from the FRC goes to a main line. In an embodiment, a third line from the ampoule goes to the main line. In an embodiment, a mass flow meter is coupled to the main line.

公开(公告)号：US11621160B2

公开(公告)日：2023-04-04

申请号：US17391412

申请日：2021-08-02

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  C23C16/40 ,  C23C16/455

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.