公开(公告)号：US07227262B2

公开(公告)日：2007-06-05

申请号：US10954649

申请日：2004-10-01

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：形成覆盖形成有电极的半导体衬底的表面的钝化膜，其中形成有开口以从电极中露出预定电极; 在钝化膜中的开口附近形成第一金属的防扩散插塞; 将第二金属材料供给到已经形成有扩散防止塞的半导体基板的表面上，以形成第二金属的籽晶层; 形成覆盖种子层并形成有开口的抗蚀剂膜，以暴露防扩散插塞上的籽晶层的预定区域; 将第三金属材料供应到所述抗蚀剂膜的开口中，以形成所述第三金属的突出电极; 在形成突起电极的步骤之后去除抗蚀剂膜; 以及在形成突起电极的步骤之后去除种子层。

公开(公告)号：US20070080457A1

公开(公告)日：2007-04-12

申请号：US11635044

申请日：2006-12-07

申请人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yukiharu Akiyama

发明人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yukiharu Akiyama

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/1134 ,  H01L2224/13021 ,  H01L2224/13025 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid state device where a solid state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid state device side connection member.

摘要翻译： 半导体装置的制造方法包括：准备半导体芯片的步骤，该半导体芯片设置有形成在半导体基板的正面侧的功能元件，放置在贯通半导体基板的通孔内的馈通电极， 从前表面突出的前表面侧连接构件和在形成在后表面的凹部内具有接合表面的后表面侧连接构件; 制备固态器件的步骤，其中在一个表面上形成用于连接到前表面侧连接部件的固态器件侧连接部件; 并且通过保持半导体芯片的后表面并将前表面侧连接构件接合到固态器件侧连接构件，使半导体芯片的前表面面向固态器件的第一表面的接合步骤。

公开(公告)号：US07169639B2

公开(公告)日：2007-01-30

申请号：US10824639

申请日：2004-04-15

申请人： Mitsuo Umemoto ,  Kazumasa Tanida

发明人： Mitsuo Umemoto ,  Kazumasa Tanida

IPC分类号： H01L21/44

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention relates to a semiconductor device manufacturing method which can provide high reliability in electric connection between an electrode of a semiconductor chip and a substrate. Sealing resin is coated in a region of a substrate where a first electrode is not formed. A semiconductor chip formed with a second electrode on its end portion is prepared and disposed so as to face to a front surface of the substrate. The end portion of the semiconductor chip is pressed from its back surface by shifting a first movable plate downward to press the second electrode into contact with the first electrode. After then, a center portion of the semiconductor chip is pressed from its back surface by shifting a second movable plate downward to fill a space between the substrate and the semiconductor chip with the sealing resin.

摘要翻译： 本发明涉及一种半导体器件制造方法，其可以提供半导体芯片的电极与基板之间的电连接的高可靠性。 在不形成第一电极的基板的区域中涂布密封树脂。 制备在其端部上形成有第二电极的半导体芯片，并设置成面向基板的前表面。 半导体芯片的端部通过向下移动第一可动板而将第二电极与第一电极接触来从其背面按压。 然后，通过向下移动第二可移动板，用密封树脂填充基板和半导体芯片之间的空间，从其背面按压半导体芯片的中心部分。

公开(公告)号：US20060267206A1

公开(公告)日：2006-11-30

申请号：US11498079

申请日：2006-08-03

申请人： Kazumasa Tanida ,  Yoshihiko Nemoio ,  Kenji Takahashi

发明人： Kazumasa Tanida ,  Yoshihiko Nemoio ,  Kenji Takahashi

IPC分类号： H01L23/48

CPC分类号： H01L23/481 ,  H01L21/76831 ,  H01L21/76898 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/9202 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01032

摘要： The invention provides a semiconductor chip manufacturing method, including a step of forming a front-surface-side concave portion in a semiconductor substrate having a front surface and a rear surface, a functional device being formed on the front surface, the front-surface-side concave portion being formed in the front surface and having a predetermined depth smaller than a thickness of the semiconductor substrate; a dummy plug forming step of supplying nonmetallic material into the front-surface-side concave portion and embedding a dummy plug made of the nonmetallic material; a thinning step of removing a part of the rear surface of the substrate and thinning the semiconductor substrate so that the thickness of the semiconductor substrate becomes smaller than the depth of the front-surface-side concave portion and so that the front-surface-side concave portion is formed into a through-hole; a dummy plug removing step of removing the dummy plug; and a step of supplying metallic material into the through-hole and forming a penetration electrode.

摘要翻译： 本发明提供一种半导体芯片的制造方法，其特征在于，具有在具有前表面和后表面的半导体衬底中形成正面侧凹部的工序，在前表面形成有功能元件， 所述侧面凹部形成在所述前表面中并且具有比所述半导体衬底的厚度小的预定深度; 将非金属材料供给到前表面侧凹部并嵌入由非金属材料制成的虚拟插头的虚拟插头形成步骤; 去除基板的后表面的一部分并使半导体衬底变薄以使半导体衬底的厚度变得小于前表面侧凹部的深度的薄化步骤，并且使得前表面侧 凹部形成为通孔; 一个去除虚拟插头的虚拟插头去除步骤; 以及将金属材料供应到通孔中并形成穿透电极的步骤。

公开(公告)号：US20060267186A1

公开(公告)日：2006-11-30

申请号：US10573772

申请日：2005-06-09

申请人： Kazumasa Tanida ,  Tadahiro Morifuji ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Tadahiro Morifuji ,  Osamu Miyata

IPC分类号： H01L23/34

CPC分类号： H01L25/0657 ,  H01L23/3114 ,  H01L24/20 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device provided with a first semiconductor chip having a first functional surface formed with a first functional element and a first rear surface, a second semiconductor chip having a second functional surface which is formed with a second functional element, the second functional surface having a region opposed to the first functional surface of the first semiconductor chip and a non-opposed region defined outside the opposed region, a connection member electrically connecting the first functional element and the second functional element, an insulation film continuously covering the non-opposed region of the second semiconductor chip and the first rear surface of the first semiconductor chip, a rewiring layer provided on a surface of the insulation film, a protective resin layer covering the rewiring layer, and an external connection terminal projecting from the rewiring layer through the protective resin layer.

摘要翻译： 一种具有第一半导体芯片的半导体器件，具有形成有第一功能元件和第一后表面的第一功能面，具有形成有第二功能元件的第二功能面的第二半导体芯片，所述第二功能面具有 与第一半导体芯片的第一功能表面相对的区域和限定在相对区域外部的非对置区域，将第一功能元件和第二功能元件电连接的连接构件，连续地覆盖第一功能元件的非对置区域的绝缘膜， 第二半导体芯片和第一半导体芯片的第一后表面，设置在绝缘膜的表面上的再布线层，覆盖重新布线层的保护树脂层和从再布线层穿过保护树脂突出的外部连接端子 层。

公开(公告)号：US20060194367A1

公开(公告)日：2006-08-31

申请号：US11396797

申请日：2006-04-04

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L21/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05611 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166

摘要： A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成第一金属的阻挡掩模层的步骤，所述阻挡掩模层在其预定位置具有开口; 所述金属供给步骤将第二金属供给到所述阻挡掩模层的开口中，以形成所述第二金属的突起电极; 以及在金属供给步骤之后移除止动掩模层。

公开(公告)号：US20060084258A1

公开(公告)日：2006-04-20

申请号：US11281727

申请日：2005-11-18

申请人： Yoshihiko Nemoto ,  Kazumasa Tanida ,  Kenji Takahashi

发明人： Yoshihiko Nemoto ,  Kazumasa Tanida ,  Kenji Takahashi

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/48

CPC分类号： H01L25/50 ,  H01L21/56 ,  H01L21/8221 ,  H01L23/3107 ,  H01L23/481 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L27/0688 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/19043 ,  H01L2224/81 ,  H01L2224/05599

摘要： Semiconductor device includes a pair of substrates (1, 2) disposed oppositely, semiconductor elements (5, 6) formed in the substrates (1, 2), respectively, and having semiconductor circuits (3, 4) and electrodes (7, 8), respectively, a wiring conductor (9) interposed between the electrodes (7, 8), and a through electrode (12) extending through one substrate (1) and connected to the electrode (7) via the wiring conductor (9). The other substrate (2) is disposed laterally of the through electrode (12). Surface of the through electrode (12) projecting from the one substrate (1) and lateral surface of the element (6) are coated with an insulation material (13). The through electrode (12) has one end exposed in a back surface of the one substrate (1), while other end is positioned flush with a back surface of the other substrate (2), being exposed.

摘要翻译： 半导体器件包括分别相对设置的形成在基板（1,2）中并具有半导体电路（3,4）和电极（7,8）的半导体元件（5,6）的一对基板（1,2） 分别插入在电极（7,8）之间的布线导体（9）和延伸穿过一个基板（1）并经由布线导体（9）连接到电极（7）的通孔（12）。 另一基板（2）设置在贯通电极（12）的横向。 从一个基板（1）伸出的贯通电极（12）和元件（6）的侧面的表面涂有绝缘材料（13）。 通孔电极（12）的一端暴露在一个基板（1）的背面，另一端与另一个基板（2）的背面齐平，露出。

公开(公告)号：US20050151228A1

公开(公告)日：2005-07-14

申请号：US11003769

申请日：2004-12-06

申请人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yoshihiko Nemoto ,  Kenji Takahashi

发明人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yoshihiko Nemoto ,  Kenji Takahashi

IPC分类号： H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/46 ,  H01L21/60 ,  H01L21/768 ,  H01L23/12 ,  H01L23/48 ,  H01L23/544 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L23/481 ,  H01L21/76843 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012

摘要： The invention provides a semiconductor chip manufacturing method including the steps of: forming a concave portion extended in the thickness direction of a semiconductor substrate which has a front surface and a rear surface and has a function device formed on the front surface, from the front surface; forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion; supplying a second metal material containing a metal which is oxidized more easily than the first metal material to the inside of the concave portion after the step of forming the oxidation preventive film; electrically connecting the second metal material supplied to the inside of the concave portion and the function device; and thinning the semiconductor substrate so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film.

摘要翻译： 本发明提供一种半导体芯片制造方法，包括以下步骤：在具有前表面和后表面的半导体衬底的厚度方向上形成有从前表面形成的功能器件的凹部 ; 通过将所述第一金属材料供应到所述凹部的内壁表面上，形成由惰性第一金属材料制成的防氧化膜; 在形成氧化防止膜的步骤之后，将含有比第一金属材料更容易氧化的金属的第二金属材料供给到凹部内部; 电连接供应到凹部内侧的第二金属材料和功能装置; 并且通过在离开氧化防止膜的同时从后表面除去半导体衬底，使半导体衬底的厚度变薄到比凹部的深度更薄。

公开(公告)号：US20050023675A1

公开(公告)日：2005-02-03

申请号：US10870440

申请日：2004-06-18

申请人： Mitsuo Umemoto ,  Kazumasa Tanida

发明人： Mitsuo Umemoto ,  Kazumasa Tanida

IPC分类号： H01L25/18 ,  H01L21/52 ,  H01L21/60 ,  H01L23/48 ,  H01L25/065 ,  H01L25/07 ,  H01L23/34

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2924/01004 ,  H01L2924/01078

摘要： The invention realizes excellent electrical and mechanical connection between electrodes in a packaging structure where a plurality of semiconductor chips having electrodes are connected with each other through the low-melting metallic members. Bump electrodes are formed on a front surface of a first semiconductor chip. Penetrating holes are formed in a second semiconductor chip, and a penetrating electrode having a gap in a center is formed in each of the penetrating holes. Low-melting metallic members are interposed between connecting surfaces of the bump electrodes and the penetrating electrodes, and a part of each of the low-melting metallic members flows in each of the gaps of the penetrating electrodes when dissolved. This prevents short-circuiting between the bump electrodes which is caused by oversupplying the low-melting metallic members between the adjacent bump electrodes.

摘要翻译： 本发明实现了具有电极的多个半导体芯片通过低熔点金属部件彼此连接的封装结构中的电极之间的优异的电气和机械连接。 凸起电极形成在第一半导体芯片的前表面上。 穿透孔形成在第二半导体芯片中，并且在每个穿透孔中形成有在中心具有间隙的穿透电极。 低熔点金属构件插入在凸块电极和穿透电极的连接面之间，并且每个低熔点金属构件的一部分在溶解时在贯通电极的每个间隙中流动。 这防止了在相邻的凸起电极之间的低熔点金属构件供应过大引起的突起电极之间的短路。