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786 条记录 (耗时 0.048 秒)

    Method of separating light-emitting diode from a growth substrate
    71.
    发明授权
    Method of separating light-emitting diode from a growth substrate 有权
    从生长衬底分离发光二极管的方法

    公开(公告)号：US08236583B2

    公开(公告)日：2012-08-07

    申请号：US12554578

    申请日：2009-09-04

    申请人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

    摘要翻译： 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

    Schemes for forming barrier layers for copper in interconnect structures
    72.
    发明授权
    Schemes for forming barrier layers for copper in interconnect structures 有权
    用于在互连结构中形成铜的阻挡层的方案

    公开(公告)号：US08232201B2

    公开(公告)日：2012-07-31

    申请号：US13115161

    申请日：2011-05-25

    申请人： Chen-Hua Yu ,  Hai-Ching Chen ,  Tien-I Bao

    发明人： Chen-Hua Yu ,  Hai-Ching Chen ,  Tien-I Bao

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53238 ,  H01L21/322 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. A lining barrier layer is formed in the opening for embedding the conductive wiring. The lining barrier layer may comprise same materials as the barrier layer, and the lining barrier layer may be recessed before forming the barrier layer and may contain a metal that can be silicided.

    摘要翻译： 形成半导体结构的方法包括提供基板; 在衬底上形成低k电介质层; 将导电布线嵌入到低k电介质层中; 并且将导电布线热浸在含碳硅烷类化学品中以在导电布线上形成阻挡层。 在用于嵌入导电布线的开口中形成衬里阻挡层。 衬里阻挡层可以包括与阻挡层相同的材料，并且衬里阻挡层可以在形成阻挡层之前被凹入，并且可以包含可以被硅化的金属。

    COOLING MECHANISM FOR STACKED DIE PACKAGE AND METHOD OF MANUFACTURING THE SAME
    77.
    发明申请
    COOLING MECHANISM FOR STACKED DIE PACKAGE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    堆叠式包装的冷却机构及其制造方法

    公开(公告)号：US20120061059A1

    公开(公告)日：2012-03-15

    申请号：US13033840

    申请日：2011-02-24

    申请人： Yi-Li HSIAO ,  Chen-Hua Yu ,  Da-Yuan Shih ,  Chih-Hang Tung ,  Chun Hui Yu

    发明人： Yi-Li HSIAO ,  Chen-Hua Yu ,  Da-Yuan Shih ,  Chih-Hang Tung ,  Chun Hui Yu

    IPC分类号： F28D15/00

    CPC分类号： F28D15/02 ,  H01L23/34 ,  H01L23/473 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/0401

    摘要： An apparatus for cooling a stacked die package comprises a first die provided above a substrate; a second die above the first die; a cooling fluid in fluid communication with the first die and the second die, the cooling fluid for absorbing thermal energy from the first and the second die; a housing containing the first and second dies, the housing sealing the first and second dies from an environment, wherein the housing further includes a first opening and a second opening, the first and second openings being vertically displaced from one another; a conduit having one end connected to the first opening and the other end connected to the second opening, the conduit allowing the cooling liquid to circulate from the first opening to the second opening; a first temperature sensor being arranged to provide an output that is dependent on a local temperature at the first opening; and a second temperature sensor being arranged to provide an output that is dependent on a local temperature at the second opening, wherein the outputs of the first and second temperature sensors relative to each other are indicative of a level of the cooling fluid.

    摘要翻译： 一种用于冷却堆叠的管芯封装的设备，包括设置在衬底上的第一管芯; 第一个模具上方的第二个模具; 与第一模具和第二模具流体连通的冷却流体，用于从第一模具和第二模具吸收热能的冷却流体; 壳体，其包含第一和第二模具，所述壳体将环境中的第一和第二模具密封，其中所述壳体还包括第一开口和第二开口，所述第一和第二开口彼此垂直移位; 导管，其一端连接到第一开口，另一端连接到第二开口，导管允许冷却液从第一开口循环到第二开口; 第一温度传感器被布置成提供依赖于第一开口处的局部温度的输出; 并且第二温度传感器被布置成提供取决于第二开口处的局部温度的输出，其中第一和第二温度传感器相对于彼此的输出指示冷却流体的水平。

    Method of fabricating semiconductor device isolation structure
    79.
    发明授权
    Method of fabricating semiconductor device isolation structure 有权
    制造半导体器件隔离结构的方法

    公开(公告)号：US08110890B2

    公开(公告)日：2012-02-07

    申请号：US11758043

    申请日：2007-06-05

    申请人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    发明人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    IPC分类号： H01L21/70

    CPC分类号： H01L21/76202 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L21/762 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

    摘要翻译： 包括可折入隔离结构的半导体器件和用于制造这种器件的方法。 优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。 至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。 在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

    Germanium FinFETs Having Dielectric Punch-Through Stoppers
    80.
    发明申请
    Germanium FinFETs Having Dielectric Punch-Through Stoppers 有权
    具有介质穿孔塞的锗FinFET

    公开(公告)号：US20120025313A1

    公开(公告)日：2012-02-02

    申请号：US13272994

    申请日：2011-10-13

    申请人： Cheng-Hung Chang ,  Yu-Rung Hsu ,  Chen-Yi Lee ,  Shih-Ting Hung ,  Chen-Nan Yeh ,  Chen-Hua Yu

    发明人： Cheng-Hung Chang ,  Yu-Rung Hsu ,  Chen-Yi Lee ,  Shih-Ting Hung ,  Chen-Nan Yeh ,  Chen-Hua Yu

    IPC分类号： H01L27/12 ,  H01L29/02

    CPC分类号： H01L29/66795 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02617 ,  H01L29/1054 ,  H01L29/7851

    摘要： A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fin. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.

    摘要翻译： 形成半导体结构的方法包括提供复合衬底，该复合衬底包括在本体硅衬底上并邻接体硅衬底的体硅衬底和硅锗（SiGe）层。 对SiGe层进行第一次冷凝以形成冷凝的SiGe层，使得冷凝的SiGe层具有基本均匀的锗浓度。 蚀刻冷凝的SiGe层和体硅衬底的顶部以在硅片上形成包括硅翅片和冷凝的SiGe鳍的复合翅片。 该方法还包括氧化硅片的一部分; 并对冷凝的SiGe翅片进行第二冷凝。