公开(公告)号：US5539613A

公开(公告)日：1996-07-23

申请号：US73066

申请日：1993-06-08

申请人： Shintaro Yamamichi ,  Toshiyuki Sakuma ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Toshiyuki Sakuma ,  Yoichi Miyasaka

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/92

CPC分类号： H01L28/40

摘要： In a semiconductor device which has a substrate, at least one thin film capacitor having a lower electrode layer deposited on the substrate, a dielectric layer overlaid on the lower electrode layer, and an upper electrode layer stacked on the dielectric layer, the lower electrode layer is surrounded by an insulator layer of Si.sub.3 N.sub.4.

摘要翻译： 在具有衬底的半导体器件中，至少一个薄膜电容器具有沉积在衬底上的下电极层，覆盖在下电极层上的电介质层和堆叠在电介质层上的上电极层，下电极层 被Si3N4的绝缘体层包围。

公开(公告)号：US08710669B2

公开(公告)日：2014-04-29

申请号：US13320798

申请日：2010-05-18

申请人： Kentaro Mori ,  Yoshiki Nakashima ,  Daisuke Ohshima ,  Katsumi Kikuchi ,  Shintaro Yamamichi

发明人： Kentaro Mori ,  Yoshiki Nakashima ,  Daisuke Ohshima ,  Katsumi Kikuchi ,  Shintaro Yamamichi

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L23/5389 ,  H01L23/49827 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/3511 ,  H05K1/185 ,  H05K3/4602 ,  H05K3/4644 ,  H05K2201/10674 ,  H01L2924/00

摘要： A semiconductor device includes a core substrate, and at least one insulating layer and at least one wiring layer that are disposed on a first surface and a second, opposite surface of the substrate. The semiconductor device includes a via disposed in the insulating layer and in the core substrate, and which connects the wiring layers to one another. The semiconductor device includes a semiconductor element mounted on the first surface, forming an electrode terminal that faces up. The semiconductor device includes a connecting portion that penetrates the insulating layer and directly connects the electrode terminal of the semiconductor element and the wiring layer on the first surface. A minimum wiring pitch of this wiring that of any wiring layer on the second surface.

摘要翻译： 半导体器件包括芯基板，以及设置在基板的第一表面和第二相对表面上的至少一个绝缘层和至少一个布线层。 半导体器件包括布置在绝缘层和芯基板中并且将布线层彼此连接的通孔。 半导体器件包括安装在第一表面上的半导体元件，形成面向上的电极端子。 半导体器件包括穿透绝缘层并直接连接半导体元件的电极端子和第一表面上的布线层的连接部分。 该布线的最小布线间距为第二面上任何布线层的布线间距。

公开(公告)号：US20130026653A1

公开(公告)日：2013-01-31

申请号：US13636324

申请日：2011-03-22

申请人： Shintaro Yamamichi ,  Katsumi Kikuchi ,  Yoshiki Nakashima ,  Kentaro Mori

发明人： Shintaro Yamamichi ,  Katsumi Kikuchi ,  Yoshiki Nakashima ,  Kentaro Mori

IPC分类号： H01L21/56 ,  H01L23/48

CPC分类号： H05K1/185 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/18 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/3511 ,  H05K3/4605 ,  H05K2201/09581 ,  H05K2201/10674 ,  H05K2203/1469 ,  H01L2924/00

摘要： In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property.

摘要翻译： 在包含多个布线层和绝缘层的多层布线结构中包含半导体元件的半导体器件的制造方法中，将半导体元件安装在硅支撑体上，该硅支撑体的厚度减小到期望的厚度并且配备有 多个穿过厚度方向的通孔; 形成绝缘层以嵌入半导体元件; 那么在与硅半导体元件相连的硅支撑体的相对表面上形成多个布线层。 因此，可以减少在制造中在半导体元件附近发生的翘曲，从而改善整个半导体器件的翘曲轮廓。 此外，可以防止半导体元件变得无用，提高成品率，并且可以生产具有高密度封装性能的薄型半导体器件。

公开(公告)号：US20120068359A1

公开(公告)日：2012-03-22

申请号：US13320798

申请日：2010-05-18

申请人： Kentaro Mori ,  Yoshiki Nakashima ,  Daisuke Ohshima ,  Katsumi Kikuchi ,  Shintaro Yamamichi

发明人： Kentaro Mori ,  Yoshiki Nakashima ,  Daisuke Ohshima ,  Katsumi Kikuchi ,  Shintaro Yamamichi

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L23/5389 ,  H01L23/49827 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/3511 ,  H05K1/185 ,  H05K3/4602 ,  H05K3/4644 ,  H05K2201/10674 ,  H01L2924/00

摘要： A semiconductor device comprises: a core substrate; at least one insulating layer and at least one wiring layer which are disposed on each of a first surface of the core substrate and a second surface opposite to the first surface; a via(s) which is disposed in each of the insulating layer and the core substrate, and connects the wiring layers to each other; a semiconductor element, mounted on the first surface of the core substrate, with a surface for forming an electrode terminal(s) facing up; and a connecting portion(s) which penetrates the insulating layer disposed on the first surface and directly connects the electrode terminal of the semiconductor element and the wiring layer disposed on the first surface. A minimum wiring pitch of the wiring layer directly connected to the connecting portion is smaller than that of any of the wiring layer(s) disposed on the second surface.

摘要翻译： 半导体器件包括：芯基板; 至少一个绝缘层和至少一个布线层，其布置在所述芯基板的第一表面和与所述第一表面相对的第二表面中的每一个上; 布置在所述绝缘层和所述芯基板的每一个中的通孔，并且将所述布线层彼此连接; 半导体元件，安装在所述芯基板的第一表面上，具有用于形成面向上的电极端子的表面; 以及穿过设置在第一表面上的绝缘层的直接连接半导体元件的电极端子和布置在第一表面上的布线层的连接部分。 直接连接到连接部分的布线层的最小布线间距小于布置在第二表面上的布线层中的布线层的最小布线间距。

公开(公告)号：US20120021357A1

公开(公告)日：2012-01-26

申请号：US13146841

申请日：2010-01-29

申请人： Katsumi Maeda ,  Shintaro Yamamichi

发明人： Katsumi Maeda ,  Shintaro Yamamichi

IPC分类号： G03F7/20 ,  G03F7/028

CPC分类号： G03F7/0392 ,  C08F220/30 ,  C08F220/58 ,  G03F7/0045

摘要： A photosensitive insulating resin composition, comprising a polymer, a photosensitizer, and an amide derivative that is expressed by the following general formula (1); (in formula (1), R1 represents a bivalent alkyl group, R2 represents a hydrocarbon group with a carbon number of 1 to 10, and R3 represents a hydrogen atom or an alkyl group with a carbon number of 1 to 4.)

摘要翻译： 一种感光绝缘树脂组合物，其包含由以下通式（1）表示的聚合物，光敏剂和酰胺衍生物; （式（1）中，R 1表示二价烷基，R 2表示碳数为1〜10的烃基，R 3表示氢原子或碳原子数为1〜4的烷基）

公开(公告)号：US08072073B2

公开(公告)日：2011-12-06

申请号：US12210702

申请日：2008-09-15

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Masaya Kawano ,  Kouji Soejima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Masaya Kawano ,  Kouji Soejima

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L24/05 ,  H01L2924/00013 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/29099 ,  H01L2924/00

摘要： A highly reliable semiconductor device in which connection reliability is assured at very small vias comprises: a semiconductor substrate; a first wiring structure placed on the semiconductor substrate and having one or more first wiring layers, one or more insulating layers and a first via; a second wiring structure placed on the first wiring structure and having one or more second wiring layers, one or more second insulating layers, a second via and a third via; and an external terminal provided on the second wiring structure. The second via, which is connected to the second wiring layer of the second wiring structure and to the external terminal, has a connection interface disposed at an end of the via that is on the side of the external terminal.

摘要翻译： 在非常小的通孔中确保连接可靠性的高度可靠的半导体器件包括：半导体衬底; 放置在半导体衬底上并具有一个或多个第一布线层，一个或多个绝缘层和第一通孔的第一布线结构; 放置在第一布线结构上并具有一个或多个第二布线层，一个或多个第二绝缘层，第二通孔和第三通孔的第二布线结构; 以及设置在第二布线结构上的外部端子。 连接到第二布线结构的第二布线层和外部端子的第二通孔具有布置在位于外部端子一侧的通孔的端部处的连接接口。

公开(公告)号：US08004074B2

公开(公告)日：2011-08-23

申请号：US12102414

申请日：2008-04-14

申请人： Kentaro Mori ,  Katsumi Kikuchi ,  Shintaro Yamamichi

发明人： Kentaro Mori ,  Katsumi Kikuchi ,  Shintaro Yamamichi

IPC分类号： H01L23/02

CPC分类号： H01L21/6835 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/295 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/85 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device, in which a semiconductor element is mounted on one side of a circuit board that is made up from an insulating layer and a wiring layer, includes metal posts provided on the side of the circuit board on which the semiconductor element is mounted; and a sealing layer provided on the side of the circuit board on which the semiconductor element is mounted such that the semiconductor element is covered and such that only portions of the metal posts are exposed.

摘要翻译： 一种半导体器件，其中半导体元件安装在由绝缘层和布线层构成的电路板的一侧上，包括设置在其上安装有半导体元件的电路板侧的金属柱; 以及密封层，设置在电路板的安装半导体元件的侧面上，使得半导体元件被覆盖，并且仅使金属柱的一部分露出。

公开(公告)号：US07791186B2

公开(公告)日：2010-09-07

申请号：US11542261

申请日：2006-10-04

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Yoichiro Kurita ,  Koji Soejima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Yoichiro Kurita ,  Koji Soejima

IPC分类号： H01L23/12

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K3/20 ,  H05K3/28 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/09881 ,  H05K2201/0989 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A wiring board comprising a first surface on which a first electrode is disposed and a second surface on which a second electrode is disposed; at least a single insulation layer and at least a single wiring layer; and one or a plurality of mounted semiconductor elements, wherein the second electrode disposed on the second surface is embedded in the insulation layer, the surface on the opposite side of the exposed surface on the second surface side of the second electrode is connected to the wiring layer, and all or part of the side surface of the second electrode does not make contact with the insulation layer.

摘要翻译： 一种布线板，包括：第一表面，其上设置有第一电极;第二表面，其上设置有第二电极; 至少单个绝缘层和至少一个布线层; 以及一个或多个安装的半导体元件，其中设置在第二表面上的第二电极嵌入在绝缘层中，在第二电极的第二表面侧上的暴露表面的相对侧上的表面连接到布线 层，并且第二电极的全部或部分侧面不与绝缘层接触。

公开(公告)号：US20070079986A1

公开(公告)日：2007-04-12

申请号：US11542309

申请日：2006-10-04

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Yoichiro Kurita ,  Koji Soejima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Yoichiro Kurita ,  Koji Soejima

IPC分类号： H05K1/11 ,  H05K3/30

CPC分类号： H01L21/6835 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/32 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3011 ,  H05K3/0023 ,  H05K3/205 ,  H05K3/4007 ,  H05K3/4644 ,  H05K2201/0367 ,  H05K2203/0733 ,  Y10T29/49128 ,  Y10T29/4913 ,  H01L2924/00012 ,  H01L2924/00

摘要： A multilayered wiring board has electrodes disposed on a first surface and a second surface, alternately layered insulation layers and wiring layers, and vias that are disposed in the insulation layer and electrically connect the wiring layers. The second electrode disposed on the second surface is embedded in the insulation layer exposed on said second surface, and the second wiring layer covered by the insulation layer exposed on said second surface does not have a layer for improving adhesion to the insulation layer.

摘要翻译： 多层布线基板具有设置在第一表面和第二表面上的电极，交替层叠的绝缘层和布线层以及布置在绝缘层中并且电连接布线层的通孔。 设置在第二表面上的第二电极嵌入在暴露在所述第二表面上的绝缘层中，并且由暴露在所述第二表面上的绝缘层覆盖的第二布线层不具有用于改善与绝缘层的粘附性的层。

公开(公告)号：US06524905B2

公开(公告)日：2003-02-25

申请号：US09903316

申请日：2001-07-11

申请人： Shintaro Yamamichi ,  Toru Mori ,  Akinobu Shibuya ,  Takao Yamazaki ,  Yuzo Shimada

发明人： Shintaro Yamamichi ,  Toru Mori ,  Akinobu Shibuya ,  Takao Yamazaki ,  Yuzo Shimada

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L23/5223 ,  H01L24/05 ,  H01L27/0688 ,  H01L2221/68363 ,  H01L2224/04042 ,  H01L2224/4847 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00

摘要： A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate 1a, interlayer insulating films 3a, 3b, and 3c, wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor 14 formed on an uppermost insulating layer. The thin film capacitor 14 comprises a lower electrode 6 connected to the ground wire block 4e through a contact 5d, an upper electrode 8 which is connected to the power source wire block 4d through a contact 5d, and which extends above the lower electrode 6, and a dielectric layer 7 which is inserted between the lower and the upper electrodes.

摘要翻译： 提供了具有小等效串联电感的薄膜电容器的半导体器件，其可以在高频范围下操作并且有助于电子器件的尺寸减小。 半导体器件包括形成在硅衬底1a，层间绝缘膜3a，3b和3c上的器件，包括电源线块和接地线块的布线块，以及形成在最上层绝缘层上的薄膜电容器14。 薄膜电容器14包括通过接触件5d连接到接地线块4e的下电极6，通过接触件5d连接到电源线块4d并且在下电极6上方延伸的上电极8， 以及插入在下电极和上电极之间的电介质层7。