公开(公告)号：US20140346542A1

公开(公告)日：2014-11-27

申请号：US14456768

申请日：2014-08-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Hong Zhong ,  Anurag Tyagi ,  Kenneth J. Vampola ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/22 ,  H01L21/02433 ,  H01L21/02458 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0083

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract translation: III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光 萃取。 纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

公开(公告)号：US08841691B2

公开(公告)日：2014-09-23

申请号：US13970046

申请日：2013-08-19

Applicant: The Regents of the University of California

Inventor： Jacob J. Richardson ,  Daniel B. Thompson ,  Ingrid Koslow ,  Jun-Seok Ha ,  Frederick F. Lange ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/60 ,  H01L33/44 ,  H01L33/28 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L21/288 ,  H01L33/007 ,  H01L33/14 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40

Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Abstract translation: 一种制备具有改进的光提取效率的发光二极管的方法，包括通过从水溶液中生长ZnO纳米棒，在III-氮化物基LED的一个或多个表面上沉积多个氧化锌（ZnO）纳米棒，其中 表面与III型氮化物的c面不同，透过LED产生的光。

公开(公告)号：US20140191244A1

公开(公告)日：2014-07-10

申请号：US14205947

申请日：2014-03-12

Applicant: The Regents of the University of California

Inventor： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/265 ,  H01L29/20 ,  H01L21/02

CPC classification number: H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract translation: （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US20140167059A1

公开(公告)日：2014-06-19

申请号：US14014904

申请日：2013-08-30

Applicant: The Regents of the University of California

Inventor： Chung-Ta Hsu ,  Chia-Yen Huang ,  Yuji Zhao ,  Shih-Chieh Haung ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32

Abstract: A method of performing a photoelectrochemical (PEC) etch on an exposed surface of a semipolar {20-2-1} III-nitride semiconductor, for improving light extraction from and for enhancing external efficiency of one or more active layers formed on or above the semipolar {20-2-1} III-nitride semiconductor.

Abstract translation: 在半极{20-2-1} III-氮化物半导体的暴露表面上执行光电化学（PEC）蚀刻的方法，用于改善从或在其上形成的一个或多个活性层的光提取和增强外部效率 半极性{20-2-1} III族氮化物半导体。

公开(公告)号：US20140138679A1

公开(公告)日：2014-05-22

申请号：US14164434

申请日：2014-01-27

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L21/02 ,  H01L29/26 ,  H01L29/16 ,  H01L29/04 ,  H01L29/20

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

公开(公告)号：US20130299777A1

公开(公告)日：2013-11-14

申请号：US13890664

申请日：2013-05-09

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  James S. Speck ,  Chih-Chien Pan

IPC: H01L33/16 ,  H01L33/00

CPC classification number: H01L33/16 ,  H01L33/0075 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square.

Abstract translation: 当LED的结温从20℃增加到至少100℃时，具有小于10％的具有外部量子效率（EQE）的III族氮化物基LED，其LED的电流密度在 每平方厘米最少20安培

公开(公告)号：US20130214284A1

公开(公告)日：2013-08-22

申请号：US13767739

申请日：2013-02-14

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

公开(公告)号：US20240258771A1

公开(公告)日：2024-08-01

申请号：US18559654

申请日：2022-05-09

Applicant: The Regents of the University of California

Inventor： Philip Chan ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01S5/343 ,  H01S5/20

CPC classification number: H01S5/34333 ,  H01S5/2068 ,  H01S2301/173

Abstract: A III-nitride based device is fabricated having an in-plane lattice constant or strain that is more than 30% biaxially relaxed, by creating a III-nitride based decomposition stop layer on or above a III-nitride based decomposition layer, wherein a temperature is increased to decompose the III-nitride based decomposition layer; and growing a III-nitride based device structure on or above the III-nitride based decomposition stop layer. The III-nitride based device structure includes at least one of an n-type layer, active layer, and p-type layer, and at least one of the n-type layer, active layer and p-type layer has an in-plane lattice constant or strain that is preferably more than 30% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed.

公开(公告)号：US20230187573A1

公开(公告)日：2023-06-15

申请号：US17926046

申请日：2021-05-28

Applicant: The Regents of the University of California

Inventor： Vincent Rienzi ,  Christian J. Zollner ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  A61L2/10 ,  A61L2/26 ,  C09K11/64 ,  C09K11/08 ,  C09K11/77

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/325 ,  H01L33/007 ,  A61L2/10 ,  A61L2/26 ,  C09K11/64 ,  C09K11/0883 ,  C09K11/77066 ,  A61L2202/11 ,  A61L2202/25

Abstract: A III-nitride LED with simultaneous visible and ultraviolet (UV) emission, in which the visible emission is due to conventional InGaN active region mechanisms and the UV emission occurs due to Auger carrier injection into a UV light emitting region, such as impurity-doped AlGaN. The primary application for the III-nitride LED is general airborne pathogen inactivation to prevent the transmission of airborne-mediated pathogens while being safe for humans.

公开(公告)号：US11411137B2

公开(公告)日：2022-08-09

申请号：US16075949

申请日：2017-02-06

Applicant: The Regents of the University of California

Inventor： Asad J. Mughal ,  Stacy J. Kowsz ,  Robert M. Farrell ,  Benjamin P. Yonkee ,  Erin C. Young ,  Christopher D. Pynn ,  Tal Margalith ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/32 ,  H01L33/00 ,  H01L25/075 ,  H01L33/06 ,  H01L33/42 ,  H01L33/04

Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.