公开(公告)号：US20160343891A1

公开(公告)日：2016-11-24

申请号：US14971019

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jaeho LEE ,  Seongjun PARK

IPC: H01L31/032 ,  H01L31/0352 ,  H01L27/144 ,  H01L29/786 ,  H01L29/12 ,  H01L29/45 ,  H01L29/66 ,  H01L31/0224 ,  H01L29/24

CPC classification number: H01L31/032 ,  H01L27/1446 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66977 ,  H01L29/786 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/1884 ,  Y02E10/50

Abstract: Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.

Abstract translation: 示例实施例涉及包括二维（2D）材料的半导体器件以及制造半导体器件的方法。 半导体器件可以是包括至少一种掺杂的2D材料的光电子器件。 光电子器件可以包括第一电极，第二电极和第一和第二电极之间的半导体层。 第一电极和第二电极中的至少一个可以包括掺杂的石墨烯。 半导体层可具有大于或等于约0.1eV，或大于或等于约0.3eV的内置电位。 第一电极和第二电极之一可以包括p掺杂的石墨烯，另一个可以包括n掺杂的石墨烯。 或者，第一电极和第二电极中的一个可以包括p掺杂或n掺杂的石墨烯，另一个可以包括金属材料。

公开(公告)号：US20160336465A1

公开(公告)日：2016-11-17

申请号：US14949602

申请日：2015-11-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/056 ,  H01L31/068 ,  H01L31/02 ,  H01L31/0352

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

公开(公告)号：US09478685B2

公开(公告)日：2016-10-25

申请号：US14311954

申请日：2014-06-23

Applicant: ZENA TECHNOLOGIES, INC.

Inventor： Young-June Yu ,  Munib Wober

IPC: G01J5/20 ,  H01L31/0352 ,  H01L31/108 ,  H01L31/113 ,  H01L31/0216 ,  H01L31/18 ,  H01L27/146 ,  H01L27/144

CPC classification number: H01L31/035281 ,  H01L27/1443 ,  H01L27/14601 ,  H01L27/14649 ,  H01L27/14683 ,  H01L31/02162 ,  H01L31/03529 ,  H01L31/108 ,  H01L31/113 ,  H01L31/18 ,  Y02E10/50

Abstract: Photodetector devices and methods for making the photodetector devices are disclosed herein. In an embodiment, the device may include a substrate; and one or more core structures, each having one or more shell layers disposed at least on a portion of a sidewall of the core structure. Each of the one or more structures extends substantially perpendicularly from the substrate. Each of the one or more core structures and the one or more shell layers form a Schottky barrier junction or a metal-insulator-semiconductor (MiS) junction.

Abstract translation: 本文公开了用于制造光电检测器件的光检测器件和方法。 在一个实施例中，装置可以包括基板; 以及一个或多个芯结构，每个芯结构具有至少设置在芯结构的侧壁的一部分上的一个或多个壳层。 所述一个或多个结构中的每一个基本上垂直地延伸。 一个或多个芯结构和一个或多个壳层中的每一个形成肖特基势垒结或金属 - 绝缘体半导体（MiS）结。

公开(公告)号：US20160307939A1

公开(公告)日：2016-10-20

申请号：US14943898

申请日：2015-11-17

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L27/144 ,  H01L31/103 ,  H04B10/80 ,  H01L31/028 ,  H04B10/25 ,  H04B10/40 ,  H01L31/0232 ,  H01L31/107

CPC classification number: H01L31/0236 ,  G02B1/002 ,  G02B1/005 ,  G02B6/42 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  Y02E10/547 ,  Y02P70/521

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

公开(公告)号：US20160293786A1

公开(公告)日：2016-10-06

申请号：US15187690

申请日：2016-06-20

Applicant: NANOPTEK CORPORATION

Inventor： John M. Guerra

IPC: H01L31/0445 ,  H01L31/032 ,  H01L31/028 ,  H01L31/0352 ,  H01G9/20 ,  H01L31/0376 ,  C25B1/00 ,  C25B1/04 ,  C25B11/04 ,  H01L31/0224 ,  H01L31/0392

CPC classification number: H01L31/0445 ,  C25B1/003 ,  C25B1/02 ,  C25B1/04 ,  C25B11/0405 ,  H01G9/20 ,  H01L31/022475 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0376 ,  H01L31/0392 ,  Y02E10/50 ,  Y02E60/368 ,  Y02E70/10 ,  Y10S123/12

Abstract: Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.

公开(公告)号：US20160284908A1

公开(公告)日：2016-09-29

申请号：US15027149

申请日：2014-10-01

Applicant: Alfredo CHIACCHIERONI

Inventor： Alfredo CHIACCHIERONI

IPC: H01L31/05 ,  H02S30/10 ,  H01L31/18 ,  H01L31/048 ,  H01L31/0352

CPC classification number: H01L31/0504 ,  H01L25/0753 ,  H01L31/035281 ,  H01L31/042 ,  H01L31/048 ,  H01L31/1876 ,  H01L2924/0002 ,  H02S30/10 ,  Y02E10/50 ,  H01L2924/00

Abstract: A light-emitting diode module for the conversion of sunlight or artificial light into electrical energy comprises an array of base LEDs (E1s; E1p), connected in series to form rows that in turn are connected together in parallel by means of branches leading to output wires on which an inverter (5) for converting the direct current produced by irradiation into alternating current supplied to the electrical grid is provided. Mounted on each of the base LEDs (E1s; E1p) is mounted a plurality of piled LEDs (E2s . . . Ens; E2p . . . Enp) so as to form a stack of LEDs (E1s . . . Ens; E1p . . . Enp) electrically connected together.

Abstract translation: 用于将太阳光或人造光转换成电能的发光二极管模块包括串联连接的基底LED阵列（E1s; E1p），以形成行，其依次通过分支连接在一起，导致输出 提供用于将通过照射产生的直流转换成供给到电网的交流电的逆变器（5）的电线。 安装在每个基本LED（E1s; E1p）上的多个堆叠LED（E2 ... Ens; E2p ... Enp），以形成一堆LED（E1s。Ens; E1p。 Enp）电连接在一起。

公开(公告)号：US09450122B2

公开(公告)日：2016-09-20

申请号：US14711420

申请日：2015-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Ahn ,  Yongwoo Jeon ,  Jungwoo Kim ,  Haeseok Park ,  Seungeon Ahn ,  Seunghyup Lee ,  Myounghoon Jung ,  Hyuksoon Choi

IPC: H01L31/102 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/0336 ,  H01L27/14601 ,  H01L27/14643 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Abstract translation: 示例性实施例涉及包括衬底，形成在衬底上的绝缘掩模层和与绝缘掩模层的表面接触的第一类型半导体层，有源层和第二类型半导体层的横向型光电二极管， 依次设置在与绝缘掩模层的表面基本平行的方向上。 绝缘掩模层包括通孔，并且通过使用横向过度生长法从通孔顺序地形成第一类型半导体层，有源层和第二类型半导体层。

公开(公告)号：US20160260766A1

公开(公告)日：2016-09-08

申请号：US15152912

申请日：2016-05-12

Applicant: Sony Corporation

Inventor： Kazuichiro Itonaga

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689 ,  H01L31/035281

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

Abstract translation: 固体摄像器件包括光电转换单元，晶体管和分离光电转换单元和晶体管的元件分离区域。 光电转换单元和晶体管构成像素。 元件分离区域由与晶体管的源极区域和漏极区域相反的导电类型的半导体区域形成。 晶体管的栅电极的一部分朝向元件分离区域侧突出超过晶体管的有源区。 在晶体管的栅极电极下面的部分连续的元件分离区域上形成具有与晶体管的栅极电极的栅极绝缘膜基本相同的厚度的绝缘膜， 在晶体管的栅电极下方。

公开(公告)号：US20160240710A1

公开(公告)日：2016-08-18

申请号：US15040734

申请日：2016-02-10

Applicant: SII Semiconductor Corporation

Inventor： Takeshi KOYAMA

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/0232

CPC classification number: H01L31/035281 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

Abstract: In order to provide a photodetection semiconductor device including a light receiving element configured to reduce afterimages, a photodiode is formed by a PN junction into a circular shape so that a uniform distance from an end portion of a light receiving element to an electrode serving as a carrier outlet is realized, to thereby enable carriers to be uniformly taken out from all directions.

Abstract translation: 为了提供包括被配置为减少残影的光接收元件的光电检测半导体器件，光电二极管由PN结形成为圆形形状，使得从光接收元件的端部到用作电极的电极的均匀距离 实现了载体出口，从而使得载体能够从各个方向均匀地取出。

公开(公告)号：US09419165B2

公开(公告)日：2016-08-16

申请号：US13846230

申请日：2013-03-18

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  JianJun Liang ,  Pranav Anbalagan ,  Mehrdad M. Moslehi

IPC: H01L31/068 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/0747 ,  H01L31/056

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1884 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for making a back contact solar cell. Base isolation regions are formed in a crystalline silicon back contact solar cell substrate having a substrate thickness in the range of approximately 1 micron to 100 microns. Pulsed laser ablation of a substance on the crystalline silicon back contact solar cell substrate is performed to form base openings, wherein the substance is at least one of silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, or silicon carbide. Emitter regions are selectively doped and base regions are selectively doped. Contact openings are formed for the selectively doped base regions and the selectively doped emitter regions. Metallization is formed on the selectively doped base regions and the selectively doped emitter regions.

Abstract translation: 一种制造背接触太阳能电池的方法。 在具有约1微米至100微米范围内的基底厚度的晶体硅背接触太阳能电池基板中形成基极隔离区。 进行晶体硅背接触太阳能电池基板上的物质的脉冲激光烧蚀以形成基底开口，其中所述物质是氧化硅，氮化硅，氧化铝，氮氧化硅或碳化硅中的至少一种。 发射极区域是选择性掺杂的，并且基极区域被选择性掺杂。 为选择性掺杂的基极区域和选择性掺杂的发射极区域形成接触开口。 在选择性掺杂的基极区域和选择性掺杂的发射极区域上形成金属化。