摘要:
After an interlayer insulating film is deposited on a silicon substrate, a contact hole or contact holes is or are formed at a desired position(s) and, then, after a polysilicon layer is deposited and the contact hole(s) is (are) embedded, the surface of the polysilicon layer is flattened by chemical and mechanical polishing using at least one of piperazine or colloidal silica slurry, and a barrier metal film 4 and a highly dielectric thin film 5 are deposited and processed to a desired size. Finally, an Al/TiN film 6 adapted for the upper electrode is formed. The leak current of the thin film capacitor which is obtained according to this method can be greatly reduced.
摘要:
A thin film capacitor which comprises a lower electrode, a dielectric film and an upper electrode is fabricated on a substrate. The lower electrode is not provided by etching process using a photoresist mask, but it is provided by providing an aperture thorough an insulating layer deposited on the substrate, and depositing a conductive film on the bottom of the aperture and connected to a lower interconnection provided on the bottom of the aperture. Consequently, no convex protrusion is found at the processed edge of the lower electrode.
摘要:
The present invention has an object to provide a substrate with a built-in functional element, including the functional element above a metal plate, in which crosstalk noise between signal wirings can be reduced and higher characteristic impedance matching can be achieved. An aspect of the present invention provides a substrate with a built-in functional element, including: a metal plate that includes a concave portion and serves as a ground; the functional element that is placed in the concave portion and includes an electrode terminal; a first insulating layer that covers the functional element and is placed in contact with the metal plate; a first wiring layer including first signal wiring that is opposite the metal plate with the first insulating layer being interposed therebetween; a second insulating layer that covers the first wiring layer; and a ground layer formed of a ground plane that is opposite the first wiring layer with the second insulating layer being interposed therebetween.
摘要:
An object of the present invention is to provide a functional device-embedded substrate that can be thinned and suppress occurrence of warpage. The present invention provides a functional device-embedded substrate including at least a functional device including an electrode terminal, and a covering insulating layer covering at least an electrode terminal surface and a side surface of the functional device, the functional device-embedded substrate including a first pillar structure around the functional device inside the covering insulating layer, the first pillar structure including a material having a thermal expansion coefficient between thermal expansion coefficients of the functional device and the covering insulating layer, wherein the first pillar structure is arranged at a position where a shortest distance from a side surface of the functional device to a side surface of the first pillar structure is smaller than a thickness of the functional device.
摘要:
A semiconductor device comprising a flat wiring board, a first LSI disposed on one surface of the wiring board, a sealing resin for covering the one surface and a side face of the first semiconductor element, and a second LSI disposed on another surface of the wiring board. The wiring board has conductive wiring as a wiring layer, an insulation resin as a support layer for the wiring layer, and a conductive through-hole that passes through the wiring layer and the support layer. Connection points between lands disposed in positions in which the external peripheral edges of the semiconductor elements transverse the interior of the lands as viewed vertically from above, which lands are selected from land portions on which the external connection terminals are formed, and the wiring board formed in the same plane as the lands, are unevenly distributed toward one side of the wiring board. Connections for very small wiring are thereby made possible, and a plurality of semiconductor elements can be very densely connected.
摘要:
A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film.
摘要:
A thin film capacitor is provided with a substrate having a thickness equal to or more than 2 &mgr;m and equal to or less than 100 &mgr;m; a lower electrode on the substrate, which includes at least a highly elastic electrode and an anti-oxidation electrode on the highly elastic electrode; a dielectric thin film on the first lower electrode; and an upper electrode on the dielectric thin film; wherein the highly elastic electrode is made of a material having a Young's modulus higher than that of the anti-oxidation electrode.
摘要:
There is provided a thin film capacitor including (a) a semiconductor substrate, (b) an interlayer insulating film formed on the semiconductor substrate, (c) a contact formed throughout the interlayer insulating film such that the contact has an upper surface upwardly projecting, (d) a lower electrode formed on the interlayer insulating film such that the lower electrode covers the upper surface of the contact therewith, (e) a capacitor insulating film covering the lower electrode and the interlayer insulating film therewith, and (f) an upper electrode formed on the capacitor insulating film. The thin film capacitor prevents peeling between the contact and the lower electrode even in an annealing step.
摘要:
A semiconductor device having thin film capacitors and containing resistance measuring elementsis disclosed. The thin film capacitor comprises a bottom electrode, a high permittivity dielectric, and a top electrode stacked on an interlayer insulation film and at least one of a plurality of contact formed in electrical contact with the substrate at the desired position of an interlayer insulation film formed on a semiconductor substrate. The bottom electrode comprises at least two layers. A resistance measuring element consists of the same materials as those of the thin film capacitor and has the same size as that of the thin film capacitor except that the resistance measuring element comprises a first electrode, the dielectric film of high permittivity, and a second electrode stacked on the interlayer insulation film and at least one of a plurality of contacts other than the above-mentioned contact for the thin film capacitor, and the topmost layer of the first electrode and the second electrode are in contact with each other through the contact provided at a portion of the dielectric film. The resistance value of the bottom electrode of the thin film capacitor is measured using electrical path through the substrate.
摘要:
A thin film capacitor uses a dielectric film of high dielectric constant. A lower electrode is disposed on a contact, an interlayer insulating film is in contact with the lower electrode, a dielectric film of high dielectric constant covers the lower electrode, and an upper electrode covers the dielectric film. Thicknesses of the dielectric film at lower end portions of the lower electrode are thin but thick enough to make a leakage current value lower than a tolerable value thereof. At locations immediately below the lower electrode, the interlayer insulating film has portions whose thicknesses are larger than thicknesses of other portions thereof. The interlayer insulating film is such that, immediately below the regions of the dielectric film which are located at lower end portions of sides of the lower electrode and at which thicknesses of the dielectric film are very thin, the thicknesses of the interlayer insulating film are made larger than the rest thereof, or the dielectric film is such that lower end portions thereof are thin but thick enough to make a leakage current value lower than a tolerable value thereof. In this way, the occurrence of leakage current at the lower end portions of the lower electrode is suppressed.