公开(公告)号：US08808901B2

公开(公告)日：2014-08-19

申请号：US13410299

申请日：2012-03-02

Applicant: Fu-Ming Wang ,  Hsin-Yi Wang ,  Chin-Shu Cheng

Inventor： Fu-Ming Wang ,  Hsin-Yi Wang ,  Chin-Shu Cheng

IPC: H01M2/16

CPC classification number: C23C16/402 ,  B82Y30/00 ,  C23C16/405 ,  C23C16/45555 ,  H01M4/13 ,  H01M4/133 ,  H01M4/139 ,  H01M4/1393 ,  H01M4/366 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/4235

Abstract: An anode protector of a lithium-ion battery and a method for fabricating the same are provided. A passivation protector (110) is formed on a surface of an anode (102) in advance by film deposition, such as atomic layer deposition (ALD). The passivation protector (110) is composed of a metal oxide having three dimensional structures, such as columnar structures. Accordingly, the present invention is provided with effective protection of the anode electrode structure and maintenance of battery cycle life under high-temperature operation.

Abstract translation: 提供锂离子电池的阳极保护器及其制造方法。 预先通过膜沉积（例如原子层沉积（ALD））在阳极（102）的表面上形成钝化保护器（110）。 钝化保护器（110）由具有三维结构的金属氧化物构成，例如柱状结构。 因此，本发明在阳极电极结构的有效保护和高温运行时的电池循环寿命的维持下进行。

公开(公告)号：US20140199839A1

公开(公告)日：2014-07-17

申请号：US14190416

申请日：2014-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun SATO ,  Pao-Hwa Chou

IPC: H01L21/02

CPC classification number: H01L21/02304 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02299 ,  H01L21/02312

Abstract: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.

Abstract translation: 成膜方法包括在被处理物上形成钨膜或氧化钨膜，对其上形成有钨膜或氧化钨膜的物体进行加热，在钨膜或氧化钨上形成晶种层 通过向钨膜或氧化钨膜的表面供给氨基硅烷类气体，通过同时供给包含硅的硅材料气体和包含氧化硅的氧化剂的气体，在种子层上形成氧化硅膜 。

公开(公告)号：US20140170423A1

公开(公告)日：2014-06-19

申请号：US14087882

申请日：2013-11-22

Applicant: KONICA MINOLTA HOLDINGS, INC.

Inventor： Kazuhiro FUKUDA ,  Toshio Tsuji ,  Chikao Mamiya ,  Hiroaki Arita

IPC: H01L51/52 ,  H01L51/00

CPC classification number: H01L51/0001 ,  B32B7/02 ,  B32B27/00 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  H01L51/5253 ,  H01L51/5256 ,  H01L2251/5346 ,  Y10T428/24942 ,  Y10T428/24992 ,  Y10T428/31504 ,  Y10T428/31663

Abstract: A transparent gas barrier film comprising a substrate having thereon a gas barrier layer comprising at least a low density layer and a high density layer, wherein one or more intermediate density layers are sandwiched between the low density layer and the high density layer.

Abstract translation: 一种透明阻气膜，包括其上具有至少包括低密度层和高密度层的气体阻隔层的基底，其中一个或多个中间密度层夹在低密度层和高密度层之间。

公开(公告)号：US20140154399A1

公开(公告)日：2014-06-05

申请号：US14085749

申请日：2013-11-20

Applicant: SIO2 MEDICAL PRODUCTS, INC.

Inventor： Christopher Weikart ,  Becky L. Clark ,  Adam Stevenson ,  Robert S. Abrams ,  John Belfance

IPC: A61M5/31

CPC classification number: A61M5/3129 ,  C23C16/045 ,  C23C16/402 ,  C23C16/50

Abstract: A method and apparatus for plasma modifying a workpiece such as a syringe barrel, cartridge barrel, vial, or blood tube is described. Plasma is provided within the lumen of the workpiece. The plasma is provided under conditions effective for plasma modification of a surface of the workpiece. A magnetic field is provided in at least a portion of the lumen. The magnetic field has an orientation and field strength effective to improve the uniformity of plasma modification of the interior surface of the generally cylindrical wall. A vessel made according to the process or using the apparatus described above. A pharmaceutical package comprising the syringe barrel or vial containing a pharmaceutical preparation, secured with a closure.

Abstract translation: 描述了用于等离子体修饰诸如注射器筒，筒管，小瓶或血管的工件的方法和装置。 等离子体设置在工件的内腔内。 在对工件表面的等离子体改性有效的条件下提供等离子体。 在内腔的至少一部分设有磁场。 磁场具有有效的方向和场强，以改善大致圆柱形壁的内表面的等离子体改性的均匀性。 根据该方法或使用上述装置制造的容器。 一种药物包装，其包含用封闭物固定的含有药物制剂的注射器筒或小瓶。

公开(公告)号：US08741394B2

公开(公告)日：2014-06-03

申请号：US12970846

申请日：2010-12-16

Applicant: Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

Inventor： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC: H05H1/24

CPC classification number: C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

Abstract: Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract translation: 描述了通过等离子体增强化学气相沉积沉积膜堆叠的方法。 在一个实例中，提供了一种用于在基底上沉积薄膜叠层的方法，其中薄膜叠层包括不同组成的薄膜，并且沉淀是在原位进行的。 该方法包括在第一等离子体活化膜沉积阶段中，在衬底上沉积具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

公开(公告)号：US08734903B2

公开(公告)日：2014-05-27

申请号：US13604095

申请日：2012-09-05

Applicant: Douglas M. Nelson

Inventor： Douglas M. Nelson

IPC: C23C16/22

CPC classification number: C03C17/245 ,  C03C17/002 ,  C03C17/3417 ,  C03C2217/213 ,  C03C2218/1525 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/545

Abstract: A chemical vapor deposition process for the deposition of a silica layer on a glass substrate is provided. The process includes providing a glass substrate. The process also includes forming a gaseous precursor mixture comprising a silane compound, oxygen, water vapor, and a radical scavenger and directing the precursor mixture toward and along the glass substrate. The mixture reacts over the glass substrate to form a silica coating thereon.

Abstract translation: 提供了用于在玻璃基板上沉积二氧化硅层的化学气相沉积工艺。 该方法包括提供玻璃基底。 该方法还包括形成包含硅烷化合物，氧气，水蒸气和自由基清除剂的气态前体混合物，并将前体混合物导向和沿着玻璃基底引导。 混合物在玻璃基板上反应以在其上形成二氧化硅涂层。

公开(公告)号：US08728956B2

公开(公告)日：2014-05-20

申请号：US13084399

申请日：2011-04-11

Applicant: Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

Inventor： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC: H01L21/31

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20140123707A1

公开(公告)日：2014-05-08

申请号：US14152068

申请日：2014-01-10

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Kuniaki Hiromatsu ,  Masanobu Shirai ,  Junichi Miyashita ,  Tomohiro Yonemichi ,  Takeo Endo

IPC: C03C17/245 ,  C03B25/08

CPC classification number: C03C17/2456 ,  C03B25/08 ,  C03C17/002 ,  C03C2218/1525 ,  C23C16/402 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45578 ,  C23C16/46 ,  C23C16/52 ,  C23C16/545 ,  H01L31/0392 ,  H01L31/1884 ,  Y02E10/50

Abstract: A method for manufacturing a laminated film-coated glass substrate in which a laminated film is formed on a glass ribbon by a CVD method by means of a plurality of injectors disposed in the annealing furnace, wherein: the laminated film is formed at Tg+50° C. or lower; and in each of the injectors, if a quantity of heat exchanged between the injector and the glass ribbon is expressed by Q1 (kW), a quantity of heat exchanged between a heater paired with the injector and the glass ribbon is expressed by Q2 (kW), and an output of the glass is expressed by P (tons/day), then the relational expression |Q1|−P×0.116≦|Q2|≦|Q1| is satisfied.

Abstract translation: 一种层叠薄膜涂覆玻璃基板的制造方法，其中通过CVD法在玻璃带上形成的层叠薄膜包覆玻璃基板的方法，该方法通过设置在退火炉中的多个注射器形成，其中：层压膜形成为Tg + 50 ℃或更低; 并且在每个喷射器中，如果在喷射器和玻璃带之间交换的热量以Q1（kW）表示，则与喷射器成对的加热器与玻璃带之间交换的热量由Q2（kW ），玻璃的输出用P（吨/天）表示，则关系式| Q1 | -P×0.116＆nlE; | Q2 |＆nlE; | Q1 | 满意

公开(公告)号：US20140113457A1

公开(公告)日：2014-04-24

申请号：US14144107

申请日：2013-12-30

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Jon Henri ,  Kathryn M. Kelchner ,  Sathish Babu S. V. Janjam ,  Shane Tang

IPC: H01L21/02 ,  C23C16/515

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/515 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76829

Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.

Abstract translation: 本文的实施例集中于使用脉冲等离子体的等离子体增强原子层沉积（PEALD）工艺。 虽然常规PEALD工艺在等离子体曝光/转换操作期间使用连续波等离子体，但是本文的实施例在此操作期间利用脉冲等离子体来实现具有高质量侧壁的膜。 因为常规的PEALD技术导致在特征的底部和顶部具有高质量但在侧壁上质量较差的膜，因此在所公开的方法中增加的侧壁质量对应于整体上在质量上更均匀的膜， 常规连续波等离子体技术。

公开(公告)号：US20140106574A1

公开(公告)日：2014-04-17

申请号：US14137860

申请日：2013-12-20

Applicant: Lam Research Corporation

Inventor： Hu Kang ,  Shankar Swaminathan ,  Jun Qian ,  Wanki Kim ,  Dennis Hausmann ,  Bart J. van Schravendijk ,  Adrien LaVoie

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76826 ,  H01L21/76837

Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.

Abstract translation: 本文提供了用于填充半导体衬底上的一个或多个间隙的方法和装置。 所公开的实施例对于在狭窄和宽的特征中形成无缝隙，无空隙的填充特别有用。 可以在没有任何中间蚀刻操作的情况下执行这些方法以实现单步沉积。 在各种实施方案中，使用新颖的PEALD填充机构来执行第一操作以填充窄间隙和线宽的间隙。 可以使用PECVD方法来执行第二操作以继续填补宽的间隙。