公开(公告)号：US20170222062A1

公开(公告)日：2017-08-03

申请号：US15488145

申请日：2017-04-14

申请人： ROHM CO., LTD.

发明人： Hiroki YAMAMOTO

IPC分类号： H01L29/866 ,  H01L23/482 ,  H01L29/45 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/866 ,  H01L23/4824 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/456 ,  H01L29/66106

摘要： The present invention is directed to a chip diode with a Zener voltage Vz of 4.0 V to 5.5 V, including a semiconductor substrate having a resistivity of 3 mΩ·cm to 5 mΩ·cm and a diffusion layer formed on a surface of the semiconductor substrate and defining a diode junction region with the semiconductor substrate therebetween, in which the diffusion layer has a depth of 0.01 μm to 0.2 μm from the surface of the semiconductor substrate.

公开(公告)号：US20170207618A1

公开(公告)日：2017-07-20

申请号：US15364182

申请日：2016-11-29

申请人： FUJI ELECTRIC CO., LTD.

发明人： Shigemi MIYAZAWA

IPC分类号： H02H3/20 ,  H01L29/866 ,  F02P15/00 ,  H01L27/02

CPC分类号： H02H3/20 ,  F02P3/0552 ,  F02P11/00 ,  F02P15/00 ,  F02P17/00 ,  H01L27/0255 ,  H01L27/0266 ,  H01L29/866 ,  H02H3/202

摘要： A semiconductor apparatus can block the voltage from the power source when the voltage from the power source reaches an excessive level, without requiring a larger chip size. Provided is a semiconductor apparatus including a power semiconductor element a gate of which is controlled in response to a control signal, an overvoltage detector configured to detect that a voltage at a collector terminal of the power semiconductor element reaches an overvoltage level, and a block unit configured to, in response to the detection of the overvoltage level, control the gate of the power semiconductor element to transition to an off-voltage. The semiconductor apparatus may further include a reset unit configured to, in response to that the control signal is input that turns on the power semiconductor element, output a reset signal for a predetermined period of time.

公开(公告)号：US09705052B1

公开(公告)日：2017-07-11

申请号：US15338289

申请日：2016-10-28

申请人： LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD. ,  LITE-ON TECHNOLOGY CORPORATION

发明人： Yu-Chou Lin ,  Chen-Hsiu Lin ,  Chih-Yuan Chen

IPC分类号： H01L21/02 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L33/60 ,  H01L29/866 ,  H01L25/16 ,  H01L33/58 ,  H01L33/64 ,  H01L49/02 ,  H01L25/075 ,  H01L27/02 ,  G02B5/02

CPC分类号： H01L33/505 ,  G02B5/0278 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/0248 ,  H01L28/20 ,  H01L29/866 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2224/4554

摘要： An LED package structure includes a substrate, a circuit layer and an insulating layer both disposed on the substrate, a light-emitting unit, and a reflective housing integrally formed with the insulating layer. The light-emitting unit includes an LED chip and a fluorescent body encapsulating the LED chip. The light-emitting unit is mounted on the insulating layer and the circuit layer. The fluorescent body of the light emitting unit is spaced apart from the circuit layer with a gap in a range of 3˜10 μm. The reflective housing is formed on the insulating layer and the circuit layer and is further filled within the gap. A top plane of the reflective housing arranged away from the substrate is lower than or equal to that of the light-emitting unit, and a distance between the two top planes is in a range of 0˜30 μm.

公开(公告)号：US09613945B1

公开(公告)日：2017-04-04

申请号：US15232562

申请日：2016-08-09

申请人： Fuji Electric Co., Ltd.

发明人： Yoshiaki Toyoda

IPC分类号： H01L27/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/866 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L27/06 ,  H01L29/739

CPC分类号： H01L27/0255 ,  H01L27/0629 ,  H01L27/0814 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/16 ,  H01L29/66106 ,  H01L29/7395 ,  H01L29/7813 ,  H01L29/866 ,  H01L2224/48137 ,  H03K17/002

摘要： A diffusion diode including a p+ diffusion region, a p-type diffusion region, and an n+ diffusion region is formed in the front surface of a semiconductor substrate. A polysilicon diode including a p+ layer and an n+ layer is formed on top of a local insulating film formed on the front surface of the semiconductor substrate and faces the diffusion diode in the depth direction. The diffusion diode and the polysilicon diode are reverse-connected by electrically connecting the n+ diffusion region to the n+ layer, thereby forming a lateral protection device. The p+ layer and p+ diffusion region are respectively electrically connected to a high voltage first terminal and a low voltage second terminal of the lateral protection device. The polysilicon diode blocks a forward current generated in the diffusion diode when the electric potential of the first terminal becomes lower than the electric potential of the second terminal.

公开(公告)号：US20170079101A1

公开(公告)日：2017-03-16

申请号：US15253386

申请日：2016-08-31

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Andrew NILES ,  Kevin Joseph O'CONNOR

IPC分类号： H05B33/08 ,  H01L29/866 ,  H01L49/02 ,  H01L27/06

CPC分类号： H05B33/0824 ,  H01L28/00 ,  H01L28/20 ,  H01L29/866 ,  H05B33/0812 ,  H05B33/0845 ,  Y02B20/343

摘要： An electrical circuit, in some embodiments, comprises a control circuit having a plurality of switches and an electrical load having a plurality of load components. A first of the plurality of switches is configured to control a first of the plurality of load components. A second of the plurality of switches is configured to control a second of the plurality of load components synchronously with the first of the plurality of switches.

摘要翻译： 在一些实施例中，电路包括具有多个开关的控制电路和具有多个负载部件的电负载。 多个开关中的第一个被配置为控制多个负载分量中的第一个。 所述多个开关中的第二开关被配置为与所述多个开关中的第一开关同步地控制所述多个负载组件中的第二负载组件。

公开(公告)号：US20170077088A1

公开(公告)日：2017-03-16

申请号：US15220348

申请日：2016-07-26

申请人： FUJI ELECTRIC CO., LTD.

发明人： Shigemi MIYAZAWA

IPC分类号： H01L27/06 ,  H01L29/739 ,  H01L29/66 ,  H01L29/866

CPC分类号： H01L29/66106 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0684 ,  H01L29/1095 ,  H01L29/16 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/866 ,  H01L29/868

摘要： A device includes a vertical semiconductor switch including (i) a gate terminal and a first terminal provided on a substrate and (ii) a second terminal provided on the substrate, where the vertical semiconductor switch is configured to electrically connect or disconnect the first terminal and the second terminal, a first insulative film provided on the substrate, a second insulative film provided on the substrate, where the second insulative film is in contact with the first insulative film and thinner than the first insulative film, and a zener diode formed on the first insulative film and the second insulative film, where the zener diode includes a first portion that is formed on the first insulative film and connected to the first surface of the substrate and a second portion that is formed on the second insulative film and connected to the gate terminal.

摘要翻译： 一种器件包括垂直半导体开关，其包括（i）栅极端子和设置在衬底上的第一端子，以及（ii）设置在衬底上的第二端子，其中垂直半导体开关被配置为电连接或断开第一端子，以及 第二端子，设置在基板上的第一绝缘膜，设置在基板上的第二绝缘膜，第二绝缘膜与第一绝缘膜接触并且比第一绝缘膜更薄，以及形成在第一绝缘膜上的齐纳二极管 第一绝缘膜和第二绝缘膜，其中齐纳二极管包括形成在第一绝缘膜上并连接到基板的第一表面的第一部分和形成在第二绝缘膜上并连接到第二绝缘膜的第二部分 门终端。

公开(公告)号：US09548299B2

公开(公告)日：2017-01-17

申请号：US14848736

申请日：2015-09-09

申请人： FUJI ELECTRIC CO., LTD.

发明人： Akihiro Jonishi

IPC分类号： H01L29/10 ,  H01L27/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861 ,  H01L29/866

CPC分类号： H01L27/0629 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/092 ,  H01L27/0928 ,  H01L29/0646 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7393 ,  H01L29/78 ,  H01L29/861 ,  H01L29/866

摘要： A semiconductor device provides reduced size and increased performance, and includes a semiconductor layer having a surface layer including first and second semiconductor regions connected to first and second potentials, respectively; a third semiconductor region provided inside the first semiconductor region and connected to a third potential; a fourth semiconductor region provided inside the second semiconductor region and connected to the third potential; a plurality of a first element provided in each of the first, second, third, and fourth semiconductor regions; a first isolation region provided between and in contact with the first and second semiconductor regions, electrically connected to the semiconductor layer, and connected to a fourth potential; and a second isolation region which encloses the periphery of and maintains a withstand voltage of the first and second semiconductor regions. The third and fourth potentials are lower than the second potential, which is lower than the first potential.

摘要翻译： 半导体器件提供尺寸减小和性能提高，并且包括具有分别包括连接到第一和第二电位的第一和第二半导体区域的表面层的半导体层; 第三半导体区域，设置在所述第一半导体区域内并连接到第三电位; 第四半导体区域，设置在第二半导体区域内并连接到第三电位; 设置在所述第一，第二，第三和第四半导体区域中的每一个中的多个第一元件; 第一隔离区，设置在第一和第二半导体区之间并与之接触，电连接到半导体层，并连接到第四电位; 以及第二隔离区域，其包围第一和第二半导体区域的周边并保持其耐受电压。 第三和第四电位低于第二电位，低于第一电位。

公开(公告)号：US09548294B2

公开(公告)日：2017-01-17

申请号：US14994018

申请日：2016-01-12

申请人： FUJI ELECTRIC CO., LTD.

发明人： Takeyoshi Nishimura

IPC分类号： H01L29/66 ,  H01L27/02 ,  H01L27/06 ,  H01L29/861 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/866 ,  H01L29/94 ,  H01L49/02 ,  H01L29/06 ,  H01L23/522

CPC分类号： H01L27/0255 ,  H01L23/5223 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/0696 ,  H01L29/16 ,  H01L29/417 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/866 ,  H01L29/94 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.

摘要翻译： 电容分量区形成在温度检测二极管的下方或保护二极管的下方。 此外，电容分量区域形成在连接温度检测二极管和阳极电极焊盘的阳极金属布线下方以及连接温度检测二极管和阴极电极焊盘的阴极金属布线的下方。 电容分量区域是介于多晶硅层之间的绝缘膜。 具体地，在半导体衬底的第一主表面上依次形成第一绝缘膜，多晶硅导电层和第二绝缘膜，并且温度检测二极管，保护二极管，阳极金属布线或阴极金属 布线在第二绝缘膜的上表面上形成。 因此，可以提高温度检测二极管或保护二极管的静电电阻。

公开(公告)号：US20170012140A1

公开(公告)日：2017-01-12

申请号：US15274664

申请日：2016-09-23

申请人： DENSO CORPORATION

发明人： Takeshi FUKAZAWA

IPC分类号： H01L29/866 ,  H01L29/16 ,  H01L23/495 ,  H01T13/04 ,  H01L29/66 ,  H01L21/04 ,  H01L21/48 ,  H01L21/56 ,  H01L29/04 ,  H01L23/31

CPC分类号： H01L29/866 ,  H01L21/0465 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L27/0629 ,  H01L27/0814 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/6606 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01T13/04 ,  H01L2924/00014 ,  H01L2924/00

摘要： A diode is provided which includes at least one diode element which has a plurality of N-type regions and a plurality of P-type regions, the N-type regions and the P-type regions being alternately arranged in series to form PN junctions, and an insulated substrate which has electric insulation. The N-type regions and the P-type regions are formed on the insulated substrate.

摘要翻译： 提供二极管，其包括具有多个N型区域和多个P型区域的至少一个二极管元件，N型区域和P型区域串联交替布置以形成PN结， 以及具有电绝缘性的绝缘基板。 N型区域和P型区域形成在绝缘基板上。

公开(公告)号：US09520326B2

公开(公告)日：2016-12-13

申请号：US14614795

申请日：2015-02-05

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Kazuhiko Takada

IPC分类号： H01L23/62 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L21/265 ,  H01L29/423 ,  H01L29/45 ,  H01L29/866 ,  H01L29/06

CPC分类号： H01L21/823493 ,  H01L21/265 ,  H01L27/0629 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0873 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66106 ,  H01L29/66484 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7821 ,  H01L29/7835 ,  H01L29/866

摘要： A semiconductor device includes: first and second n-type wells formed in p-type semiconductor substrate, the second n-type well being deeper than the first n-type well; first and second p-type backgate regions formed in the first and second n-type wells; first and second n-type source regions formed in the first and second p-type backgate regions; first and second n-type drain regions formed in the first and second n-type wells, at positions opposed to the first and second n-type source regions, sandwiching the first and the second p-type backgate regions; and field insulation films formed on the substrate, at positions between the first and second p-type backgate regions and the first and second n-type drain regions; whereby first transistor is formed in the first n-type well, and second transistor is formed in the second n-type well with a higher reverse voltage durability than the first transistor.