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1.Mounting Spring Elements on Semiconductor Devices, and Wafer-Level Testing Methodology 审中-公开
标题翻译: 在半导体器件上安装弹簧元件和晶圆级测试方法公开(公告)号:US20070046313A1
公开(公告)日:2007-03-01
申请号:US11552856
申请日:2006-10-25
申请人: Benjamin Eldridge , Gary Grube , Igor Khandros , Ga tan Mathieu
发明人: Benjamin Eldridge , Gary Grube , Igor Khandros , Ga tan Mathieu
IPC分类号: G01R31/26
CPC分类号: H05K7/1069 , B23K1/0008 , B23K20/004 , B23K2101/40 , C23C18/1605 , C23C18/165 , C25D5/08 , C25D5/22 , C25D7/12 , C25D21/02 , G01R1/07342 , G01R31/2856 , G01R31/2863 , G01R31/2884 , G01R31/2886 , H01L21/4853 , H01L21/4889 , H01L21/563 , H01L21/6835 , H01L22/20 , H01L23/49811 , H01L23/544 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/27 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/72 , H01L24/81 , H01L24/83 , H01L24/90 , H01L24/94 , H01L25/0652 , H01L25/16 , H01L2223/54453 , H01L2224/02311 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/0558 , H01L2224/05599 , H01L2224/05624 , H01L2224/05644 , H01L2224/11003 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13022 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13582 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/16145 , H01L2224/274 , H01L2224/2929 , H01L2224/293 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4556 , H01L2224/45572 , H01L2224/45599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48844 , H01L2224/49109 , H01L2224/73203 , H01L2224/81801 , H01L2224/83851 , H01L2224/85201 , H01L2224/85205 , H01L2224/90 , H01L2225/0651 , H01L2225/06527 , H01L2225/06555 , H01L2225/06572 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/1532 , H01L2924/181 , H01L2924/19041 , H01L2924/20104 , H01L2924/20105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01R12/52 , H05K1/141 , H05K3/20 , H05K3/308 , H05K3/326 , H05K3/3421 , H05K3/3426 , H05K3/368 , H05K3/4015 , H05K3/4092 , H05K2201/0397 , H05K2201/068 , H05K2201/1031 , H05K2201/10318 , H05K2201/10378 , H05K2201/10719 , H05K2201/10734 , H05K2201/10757 , H05K2201/10878 , H05K2201/10909 , H05K2201/10946 , Y02P70/611 , Y02P70/613 , Y10S977/712 , Y10S977/723 , Y10T29/49004 , Y10T29/49117 , Y10T29/4913 , Y10T29/49144 , Y10T29/49147 , Y10T29/49149 , Y10T29/49169 , Y10T29/49171 , Y10T29/49204 , Y10T29/49208 , Y10T29/4922 , Y10T29/49812 , Y10T428/12396 , Y10T428/12528 , H01L2224/13099 , H01L2924/00 , H01L2224/48824 , H01L2224/48744 , H01L2224/29099 , H01L2224/29075 , H01L2224/85399 , H01L2924/206
摘要: Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150° C., and can be completed in less than 60 minutes.
摘要翻译: 弹性接触结构直接安装在半导体晶片上的接合焊盘上,在裸片与半导体晶片分离(分离)之前。 这使得半导体管芯能够通过具有设置在其表面上的多个端子的电路板等连接到半导体管芯来进行(例如,测试和/或烧入)。 接下来,半导体管芯可以从半导体晶片分离,因此可以使用相同的弹性接触结构来实现半导体管芯和其他电子部件(例如布线基板,半导体封装等)之间的互连。 使用本发明的全金属复合互连元件作为弹性接触结构,可以在至少150℃的温度下进行老化,并且可以在少于60分钟内完成。