摘要:
A semiconductor package including a protection layer, a plurality of semiconductor chips stacked on the protection layer, an inner encapsulant disposed on the protection layer to surround side surfaces of the semiconductor chips, and a terminal disposed to be buried in an upper portion of the inner encapsulant. Herein, each of the semiconductor chips includes an active surface, an inactive surface opposite to the active surface, and a chip pad disposed on a portion of the active surface, and an upper surface of the terminal is exposed from an upper surface of the inner encapsulant.
摘要:
A package may include a stack of unit chip packages, and each unit chip package may include a printed circuit board. The printed circuit board may support a semiconductor chip and a connection terminal for connecting to an adjacent unit chip package within the stack. A dummy package substrate may be disposed on the semiconductor chip of the uppermost unit chip package for protecting the semiconductor chip of the uppermost unit chip package. A method of fabricating a package may involve stacking unit chip packages so that the printed circuit board of a lower unit chip package abuts against a solder bump of an upper unit chip package, and stacking a dummy package substrate on the printed circuit board of an uppermost unit chip package.
摘要:
Provided is a printed circuit board having a bump interconnection structure that improves reliability between interconnection layers. Also provided is a method of fabricating the printed circuit board and semiconductor package using the printed circuit board. According to one embodiment, the printed circuit board includes a plurality of bumps formed on a resin layer between a first interconnection layer and a second interconnection layer. The second interconnection layer includes insertion holes corresponding to upper portions of the bumps so that the upper portions of the bumps protrude from the second interconnection layer. The upper portion of at least one of the bumps includes a rivet portion having a diameter greater that the diameter of the corresponding insertion hole to reliably interconnect the first and second interconnection layers.
摘要:
A package may include a stack of unit chip packages, and each unit chip package may include a printed circuit board. The printed circuit board may support a semiconductor chip and a connection terminal for connecting to an adjacent unit chip package within the stack. A dummy package substrate may be disposed on the semiconductor chip of the uppermost unit chip package for protecting the semiconductor chip of the uppermost unit chip package. A method of fabricating a package may involve stacking unit chip packages so that the printed circuit board of a lower unit chip package abuts against a solder bump of an upper unit chip package, and stacking a dummy package substrate on the printed circuit board of an uppermost unit chip package.
摘要:
A semiconductor package including a protection layer, a plurality of semiconductor chips stacked on the protection layer, an inner encapsulant disposed on the protection layer to surround side surfaces of the semiconductor chips, and a terminal disposed to be buried in an upper portion of the inner encapsulant. Herein, each of the semiconductor chips includes an active surface, an inactive surface opposite to the active surface, and a chip pad disposed on a portion of the active surface, and an upper surface of the terminal is exposed from an upper surface of the inner encapsulant.
摘要:
Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.
摘要:
Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.
摘要:
A stack-type semiconductor package includes: a substrate; a first through electrode module stacked on the substrate comprising a first chip and a second chip connected to the first chip by a first through electrode; a second through electrode module stacked on the first through electrode comprising a third chip and a fourth chip connected to the third chip by a second through electrode; and a signal transmission medium for electrically connecting the substrate to the first through electrode module and the second through electrode module. The stack-type semiconductor package may be highly integrated, reliability thereof is improved by increasing strength of the chips, stacking in high-steps is possible, the stack-type semiconductor package may be thin and simple, and productivity thereof may be significantly increased.
摘要:
Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.
摘要:
According to an example embodiment, a method of fabricating an electronic device may include preparing a substrate with a first area and a second area. A metal interconnection may be formed on the substrate extending from the first area to the second area. An insulating layer may be formed on the substrate. A sacrificial pattern electrically connected to the metal interconnection and serving as a sacrificial anode for cathodic protection against corrosion of the metal interconnection may be formed on the second area. An opening to expose the metal interconnection on the first area may be formed by patterning the insulating layer. An electronic device fabricated by a method according to an example embodiment may include a substrate, a metal interconnection, an insulating layer, and/or a sacrificial pattern.